File Number 2018 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 13A, 450V-500V Tps(on) = 0.40 and 0.50 Features: @ Single pulse avalanche energy rated i SOA is power-dissipation limited lH Nanosecond switching speeds lf Linear transfer characteristics High input impedance The IRFP450R, !RFP451R, IRFP452R and IRFP453R are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- down avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, Rugged Power MOSFETs IRFP450R, IRFP451R IRFP452R, IRFP453R N-CHANNEL ENHANCEMENT MODE D 9205-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION switching converters, motor drivers, relay drivers, and driv- SOURCE ers for high-power bipolar switching transistors requiring <2 high speed and low gate-drive power. These types can be DRAIN operated directly from integrated circuits. DRAIN O + The IRFP-types are supplied in the JEOEC TO-247 plastic el package. = > VIEW \oare JEDEC TO-247 Absolute Maximum Ratings Pi t IRFP450R | IRFP451R | IRFP452R | IRFP453R Units Vos Drain - Source Voltage @ 500 450 500 450 Vv Voca Drain - Gate Voltage (Ras = 20 KQ) @ 500 450 500 450 Vv lo @ Tc = 25C Continuous Drain Current 13 13 12 12 A Ib @ Tce = 100C Continuous Drain Current 8.0 8.0 7.0 7.0 A tom Pulsed Drain Current @ 52 52 48 48 A Vas Gate - Source Voltage +20 Vv Po @ Te = 25C Max. Power Dissipation 150 (See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14) W/C Eas Single Pulse Avalanche Energy Rating @ 860 mj t Qperating Junction an ae 55 10 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-309Rugged Power MOSFETs IRFP450R, IRFP451R, IRFP452R, IRFP453R Electrical Characteristics @ T; = 25C (Uniess Otherwise Specified) Parameter Type Min. Typ. Max. | Units |. Test Conditions BV, Drain - Source Breakdown Voltage | IRFP450R _ _ = oss IRFP452R 500 Vv Ves = OV IRFP451R = IRFP453R 450 _- - v lb = 250uA Vasum _ Gate Threshold Voltage ALL 2.0 =- 4.0 v Vos = Vas, lo = 250p A loss Gate-Source Leakage Forward ALL = _ 100 nA Vas = 20V lass Gate-Source Leakage Reverse ALL _ = -100 nA Ves = -20V toss Zero Gate Voltage Drain Current = _ 250 pA Vos = Max. Rating, Vas = OV ALL = | 1000 | wa | Vos = Max. Rating x 0.8, Vas = OV, Tc = 125C loom On-State Drain Current @ IRFP450R | 43 _ _ A IRFP451R Vos > lions X Rosion) max. Vas = 10V IRFP452R | 45 _ _ A IRFP453R Rosiom Static Drain-Source On-State IRFP450R _ 03 04 Q Resistance @ een Vas = 10V, Io = 7.08 IRFP453R _- 0.4 0.5 Q Gis Forward Transconductance @ ALL 6.0 141 = __|_8) | Vos > loom x Rosionmax, tp = 7.0A Cray Input Capacitance ALL _ 2000 _ pF Vas = OV, Vos = 25V, f= 1.0 MHz Cons Output Capacitance ALL = 400 = pF See Fig. 10 Cras Reverse Transfer Capacitance ALL = 100 Sod pF tation Turn-On Delay Time ALL = = 35 ns Voo = 210V, Ib = 7.0A, Zo = 4.72 t Rise Time ALL = _ 50 ns See Fig. 17 taro Turn-Off Delay Time ALL _ _ 150 ns (MOSFET switching times are essentially tt Fall Time ALL _ 70 ns independent of operating temperature.) Qs Total Gate Charge ALL _ 82 140 nc Ves = 10V, fp = 16A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Q Gate-Source Charge ALL _ 40 nc essentially independent of operating Q,a__ Gate-Drain ("Miller") Charge ALL {| 4 | [nc _| temperature) Lo Internal Drain inductance ALL - 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol] showing the header that is closer to | internal device , source and gate pins inductances and center of die. Lo Ls Internal Source Inductance ALL - 12.5 _~ nH Measured from the source pin, 6 mm & us (0.25 in.) trom header and source s bonding pad. pace: aes Thermal Resistance RiwC Junction-to-Case ALL = = 0.83 | C/W RwCS Case-to-Sink ALL = 0.1 _ *C/W_{ Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL _ _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFP450R | __ _ 13 A Modified MOSFET symbol (Body Diode) IRFP451R showing the integral D IRFP452R A reverse P-N junction rectifier. IRFP4ssR| ~~ | | 1? Iso Pulse Source Current IRFP450R} _ 52 A s (Body Diode) @ IRFP451R 9 IRFP452R aacs-4z6s0 wFPaszA{ | | 8 | A Vp Diode Forward Voltage @ IRFP450R] __ _ = = = IRFP451R 1.4 Vv Te = 25C, Is = 13A, Vas = OV IRFP452R = = = IRFP453R _ _ 13 v Te = 25C, Is = 12A, Vas = OV te Reverse Recovery Time ALL = 1300 _ ns Ty = 150C, Is = 13A, die/dt = 100A/us Qra Reverse Recovered Charge ALL = 7.4 a uC Ts = 150C, te = 13A, die/dt = 100A/ps ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ts = 25C to 150C, Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5). @ Von = 25V, starting Ty = 25C, L = 9.2mH, Roa == 250, loesx = 13A. See figures 15, 16. 6-310Rugged Power MOSFETs IRFP450R, IRFP451R, IRFP452R, IRFP453R 20 Ty = -500C | Ty = 250C Vos > 'pton) * Ros . S ee ' (on) max Ty = 1250C us PULSE 80 us PULSE TES a 15 o = = 3 2 = z z 5 5 = 10 i $s Ty = 1250C e oO 3 z z Ty = 2500 s 5 36 2 5 re) Ty = -809C 4.ov 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg. GATE-T0-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics Vos = 10 AREAIS N IRFP450R, 1R ip, DRAIN CURRENT (AMPERES) Ip. DRAIN CURRENT (AMPERES) Tr = 25C Ty = 150C MAX. Ringe = 0.83 KW SINGLE PULSE 2 3.5V ; 0 1 2 3 4 5 10 2 5 10 20 50:00 200 500 Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 05 Ot [o |} a 0.05 1 OUTY FACTOR, D - it SINGLE PULSE ENT 0.02 THERMAL IMPEDANCE) 2. PER UNIT BASE = Rinyc = 0.83 DEG. C/W. 3. Tym > Te = Pom Zenstit). 6.01 10-5 2 5 19-4 2 5 19-3 2 5 10-2 2 10-t 2 5 1.0 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Zrnsc(tV Aypyc. NORMALIZED EFFECTIVE TRANSIENT THERMAL iMPEDANCE {PER UNIT) Fig. 5 Maximum Effective Transient Thermal !mpedance, Junction-to-Case Vs. Pulse Duration 6-311Rugged Power MOSFETs IRFP450R, IRFP451R, IRFP452R, IRFP453R 20 Ty = -00C Ty = 250 > 3 we Ty = 1250C Ty = 180C nn wn Ty = 15000 2 nN wn 94, TRANSCONDUCTANCE (SIEMENS) Vos > 'pton) x Boston) max. 80 us PULSE TEST o Ipg. REVERSE DRAIN CURRENT (AMPERES) nN 1.0 0 5 19 15 20 25 0 1 2 3 4 ip, DRAIN CURRENT (AMPERES) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 22 Ves = 10V w id = 3 log = 5A z 115 < | > 2 1.8 wn z 2 8 z <5 1.08 we = N et 14 a > se Bs cE oz i} Oo Keo Bz 095 z=, e = , z a Zz 2 x = a wn 0.85 2 06 ao > o 0.75 02 60 0 40 80 120 160 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 4000 Cigg = Cys + Cgg, Cus SHORTED 20 Cres = Cog V6s=9 Cog C, Coss Cap + Et f= MHz 3200 O85 NS Cos + Cog z = Cas + Cog 8 15 Vng = 100V ca t z 8 Vos . 250v = 2400 5 Vos = 400V 3 s ._ = = 10 oO 3 < 1600 2 a - ws w < o 5 wr 800 L Ip = 16A FOR TEST CIRCUIT Crss SEE FIGURE 18 0 10 20 30 40 50 0 28 56 b4 112 140 Vos. DRAIN-TO-SOURCE VOLTAGE {VOLTS} Og, TOTAL GATE CHARGE (nC} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-312Rugged Power MOSFETs 10 a = 09 Qo . . a Vas= " z = 08 g Vgg = 20V a 507 ws 3 a > B06 nee o Lae z = 05 4 ob 2 | < s A see MEASUREO WITH CURRENT eos PULSE OF 2.0 us CURATION. 4 WA INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 ws PULSE IS MINIMAL} 03 a 1 1 i 1 10 20 30 40 sO 60 70 Ip, DRAIN CURRENT (AMP: RES) Fig. 12 Typical On-Resistance Vs. Drain Current 14) \ N va N\ \ We N 60 40 \ N 20 \ Pp. POWER DISSIPATION (WATTS) 0 20 40 60 80 100 Tc CASE TEMPERATURE (C) 120 140 Fig. 14 Power Vs. Temperature Derating Curve Yoo ADJUST Ry TO OBTAIN $ gy SPECIFIED Ip Vos PULSE 71 DUT. Ves { GENERATOR 4.12. SOURCE | _{ ut Fig. 17 Switching Time Test Circuit IRFP450R, IRFP451R, IRFP452R, IRFP453R 16 g w IRFP45OR, 4518 = = <9 E z a ao c 2 3 z 6 < oc 5 2 3 0 2 $0 16 100 Vas 180 Tc, CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK iL Vggt10V i FP ouT Res 9208-42659 Fig. 15 Unciamped Energy Test Circuit 92CS- 42660 Fig. 16 Unclamped Energy Waveforms o Ds USOLATED SUPPLY] CURRENT REGULATOR SAME TYPE lav AS DUT BATTERY _ 15 mA _t Vos 'g 'p CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 18 Gate Charge Test Circuit 6-313