Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 N-Channel Enhancement-Mode Power Field-Effect Transistors File Number 1386 12 A, 80 and 100 V lps tony: 0.2 Q Features: = SOA is power-dissipation limited = Nanosecond switching speeds Linear transfer characteristics High input impedance a Majority carrier device The RFM12N08 and RFM12N10 and the RFP12N08 and RFP12N10 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor Grivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. The RFM and RFP series were formerly RCA developmental numbers TA9284 and TA9285. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM12N08 DRAIN-SOURCE VOLTAGE ........... Voss 80 DRAIN-GATE VOLTAGE (Rys=1 MQ) ... Voor 80 GATE-SOURCE VOLTAGE ............. Ves DRAIN CURRENT, RMS Continuous ..... lo Pulsed ...........05. low POWER DISSIPATION @ Tc=25C ....... Pr 75 Derate above Tc=25C 0.6 OPERATING AND STORAGE TEMPERATURE .............00 00s Ti Tstg 9 ~. 3-412 s 92C$ -33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM12NO08 RFM12N10 ORAIN SOURCE (FLANGE } GATE g2cs-37801 JEDEC TO-204AA RFP12N08 RFP12N10 SOURCE Lt DRAIN _. = (FLANGE) oe DRAIN Ccare 92C8-39528 TOP VIEW JEDEC TO-220AB RFM12N10 RFP12N08 RFP12N10 100 80 100 Vv 100 80 100 Vv +20 Vv 12 A 30 A 75 60 60 Ww 0.6 0.48 0.48 wc -55 to +150 ___ 8 Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 ELECTRICAL CHARACTERISTICS, At Case Temperature (T-)=25C unless otherwise specified LIMITS TEST RFM12NO08 RFM12N10 CHARACTERISTIC SYMBOL CONDITIONS RFP12NO08 RFP12N10 UNITS Min. Max. | Min. | Max. Drain Source Breakdown Voltage BVoss Ip=1 mA 80 - 100 _ Vv Vas=0 Gate-Threshold Voitage Ves(th) Vas=Vos 2 4 2 4 Vv lp=1 mA Zero-Gate Voltage Drain Current loss Vps=65 V _ 1 _ Vps=80 V - - 1 Te= 125C BA Vos=65 V 50 _ Vos=80 V _ _ 50 Gate-Source Leakage Current lass Ves=t20 V _ 100 _ 100 nA Vos=0 Drain-Source On Voltage Vos(on) ip=6 A - 1.2 ~ 1.2 Ves=10 V Vv lo=12 A - 3.3 ~ 3.3 Vas=10 V Static Drain-Source On Resistance ros(on) Ip=6 A 0.2 _ 0.2 9 Ves=10 V Forward Transconductance Ors" Vps=10 V 2 - 2 _ mho Ip=6 A Input Capacitance Ciss Vos=25 V _ _ 850 _ 850 Output Capacitance oss Ves=0 V _ 300 = 300 pF Reverse-Transfer Capacitance Cres f = 1MHz _ 150 = 150 Turn-On Delay Time ta(on) Vp0=50 V 45(Typ)| 70 j45(Typ)| 70 Rise Time t In=6 A 250(Typ)| 375 [250(Typ)| 375 Turn-Off Delay Time ty(off) Rgen=Rys=50Q [85(Typ)| 130 [85(Typ)l 130 ns Fall Time tr Ves=10 V 100(Typ)| 150 |100(Typ} 150 Thermal Resistance Junction-to-Case Rac RFEM12N08, - 1.67 _ 1.67 RFM12N10 C/W RFP12NO08, RFP12N10 ~ 2.083 _ 2.083 Pulsed: Pulse duration=300 us max., duty cycle=2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS i CHARACTERISTIC SYMBOL | ConmiSIONS BEM eNOS REPIENOS = [UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vsp Iso=6 A _ 1.4 -_ 1.4 Vv Reverse Recovery Time te dir ideo Alus 150(typ) 150(typ) _ ns *Pulse Test: Width < 300 ys, duty cycle < 2%. 3-413. Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 CASE TEMPERATURE (Te }= 25: (CURVES MUST BE DERATED 6) LINEARLY WITH INCREASE (IN TEMPERATURE) FETHIS AREA IS LMITED BY res(ON) ORAIN CURRENT (Ip)A 12NO8, RFPIZNO } LOOV RFMI2NIO, RFPIZNIO 10 6 100 2 4 68 ORAIN-TOSOURCE VOLTAGE pg Vv 92CS- 36080R1 Fig. 1 - Maximum operating areas for ail types. o 50. 100 CASE TEMPERATURE (Tp }*12 JUNCTION TEMPERATURE (T))C 925 -34364h2 92C8-34358 Fig. 2 - Power dissipation vs. temperature derating curve Fig. 3 - Typical normalized gate threshold voltage as a function for all types. of junction temperature for all types. Vog 10 V PULSE TEST PULSE DURATION*60 ps OUTY CYCLE s 2% Ip*7A Vag 10V Ee 5 s a 1B a fs & ey & a 3 88 z ae z ag u g g = z g 7 2 4 6 8 1o JUNCTION TEMPERATURE IT)-*c GATE- TO- SOURSE VOLTAGE (Vgsi-v 92CS-35ITO 92CS~35159 Fig. 4 - Normalized drain-to-source on resistance to junction tem- Fig. 5 - Typical transfer characteristics for all types. perature for ail types. 3-414 Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 y T r nm Ypss GATE L SOURCE 1 VOLTAGE 4 Vpo = Voss Yoo = Yuss oR +46 2 s 3 i) .75 Voss 0.75 Voss: | g 0.50 Vpgs 0.50 Vpgs oe > ea 0.25 Voss 0.25 Voss Tt AL = 8.330 25) ig (REF) = 0.56 mA Ly Vas = 10V 2 ORAIN SOURCE VOLTAGE tg (REF, 29 8 20 {REF Ig (ach Ig (act) TIME Microseconds mace 37644 Fig. 6 - Normalized switching waveforms for constant gate-current. Refer to RCA application notes AN-7254 and AN-7260. Ves" PULSE TEST 9.7] PULSE DURATION +80ys OUTY CYCLE s 2% DAAIN. CURRENT (Ip)-A ozcs-38is7 Fig. 8 - Typical drain-to-source on resistance as a function of drain current for all types. Veg" lov PULSE TEST PULSE DURATION DUTY CYCLE 52% 25C TEMPERATURE (Tc wise i 4 = 3 i 2 : So 3 g 2 3 4 5 6 ? 8 DRAIN CURRENT (Ip}-A 92cs-3518 Fig. 10 - Typical forward transconductance as a function of drain current for all types. ORAIN CURRENT (Ip }-A RCE VOLTAGE ( Vpg)-V ORAIN TO SOU! (Yps' 92c8-36088 Fig. 7 - Typical saturation characteristics for all types. . a 4 6 wy o z 3. 5 < a a e DRAIN- TO-SOURCE VOLTAGE (Vps)-V 92CS-35I96R1 Fig. 9 - Capacitance as a function of drain-to-source voltage for all types. 102 0 TO SCOPE = Yop = SOV KELVIN CONTACT 92CS-37367 Fig. 11 Switching Time Test Circuit 3-415 Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 T v 8Vpss GATE SOURCE! r VOLTAGE da 150 | 2 L Vp = Voss = 16.670 Vo = pss dee 3 ig (REF) = 1 mA 3 > = 1 100] Veg = 104 J ; w 8 .8 > r 0.75 Voss 0.75 Voss: $ 0.50 Voss 0.50 Vogs: 0.25 V; 0.25 v 50} DSS, 08s 4 rT 42 DRAIN SOURCE VOLTAGE \ oO ig (RE 1g (REF 20: SIRER oo Sen Wg (ach Giach TIME Microseconds aecs-areuz Fig. 6 - Normalized switching waveforms for constant gate-current. Refer to RCA application notes AN-7254 and AN-7260. Vps*t0 06) pULSE TEST PULSE DURATION 80 4S OUTY CYCLE < 2% 2 a 2 = z 6 ch 5 2 ei pea 8 goa 5 w 12sec 0.3 8 a 02 eee 2 z o.1 = 40C: a = S 3 HEE 0 5 10 1 =6200025Ci SS DRAIN CURRENT (Ip) A 9208-36494 Fig. 8 - Typical drain-to-source on resistance as a function of drain current for all types. Vos210V PULSE TEST PULSE OURATION = 6045 DUTY CYCLE $ 2% FORWARD TRANSCONDUCTANCE (qfs}mhos DRAIN CURRENT (Ip}-A 9208-36489 Fig. 10 - Typical forward transconductance as a function of drain current for ail types. cs} x Le PULSE DURATION = 80,3! IDUTY CYCLE < 2% CASE TEMPERATURE DRAIN CURRENT{Ip) A ' 2 3 4 5 6 7 DRAIN-TQ~ SOURCE VOLTAGE (Vpg}V 9205-36493 Fig. 7 - Typical saturation characteristics for all types. FREQUENCY (f) = 1 MHz w o 4 2 rt g a & z < Q 30 DRAIN~TO-SOURCE VOLTAGE (Vpg)V 9208-36492 Fig. 9 - Capacitance as a function of drain-to-source voltage for all types. 16.59 = Yoo = | too v 3-419 - ee Vv, 502 TO SCOPE KELVIN CONTACT + 9208-37374 Fig. 11 Switching Time Test Circuit