Power Transistors 2SA1500 Silicon PNP Epitaxial Planar Type Power Switching @ Features High speed switching @ High collector-base voltage (Vcso) e@ Wide area of safety operation (ASO) Good linearity of DC current gain (hr) @ Absolute Maximum Ratings (Tc=25C) - Item Symbol Value . Unit Collector-base voltage Vso 400 v Collector-emitter voltage VcEo 400 Vv Emitter-base voltage VEBO -7 Vv Peak collector current lep -8 A Collector current Ic -5 A Gisspeton treaoee | Pe 7 w Junction temperature Tj 150 c Storage temperature Tatg 55~ +150 @ Electrical Characteristics (Tc=25C) 2SA1500 m@ Package Dimensions. Unit :-mm | r 10.540.5 4.8max. Sun 9.8max. 1.5max 9 411 7,.6min. , tiie Lc Wane lkS eq [+ LH <R E all be 5 3 a so ~ ws \ uta ee7e02 .omax, ) 1.5max. . ga imax, S| 3 0.8+0.1 w a3 o n . 2.54403 lly 0.7max. .08+0.5 ae i 1: Base 2: Collector ! 23 3: Emitter JEDEC : TO-220ABla) EIAJ : SC-46(a) Item Symbol / Condition min. typ. max. Unit Collector cutoff current IcBo Vep= 400V, Ip=0 100; 4A Emitter cutoff current leBo Vep= 7V, Ic=0 100 LA Collector-emitter voltage Vcea Ic=10mA, Ip=0 400 Vv ; hee: * Vce= 5V, Ic=0.5A 20 "100: DC current gain - ; hres Vce= 5V,Ic=-2A 8 Collector-emitter saturation voltage VCE isat} Ic= 2A, Ip= 0.4A _ -1.0 | _Vv Base-emitter saturation voltage VBE (sat) Ic=2A, Ip= 0.4A 15 vo. Transition frequency fr Vce=10V, Ic=0.5A, f= 1MHz 15 MHz Turn-on time ton Ic=-2A 10] #Ss Storage time tote Ip1 =- 0.4A, Ipo=0.4A 25} HS Collector current fall time tr Veco = 100V 10, #8 *hre, Classifications Class Q P bre 20~60 50~100 Panasonic 126 Mm 6932452 001b13e 765 Power Transistors Pe-Ta 40 (WTc=Ta (2)With a 100x 100% 2mm 50 (ain meat sek ithout heat sink = (Pc=14W) S a g & 3 7 30 3 z a % 20 3 3 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Var (sat) ~I 100 Ic/lp=5 > -30 ZB 10 > ao 3 -3 3 a & 7) = 3 -03 3g 2 -01 E 9 & 003 Ps) 0.01 -O1 -03 -1 -3 -10 -300 - 100 Collector current I (A) Cob Ven 10000 Ip=0- f=1MHz 3000 Tc=2sc Collector output capacitance C., (pF) -01 -0.30 -1 -3 -t -30 -1m Collector-base voltage Vin (V) DC current gain bre Collector current Ic (A) Switching time tun, tag tr: us) 1000 300 703 -0.1 0.01 0.032 a3 ol 0.03 0.01 6932652 0036133 bT5 IcVce Te=25 Ip=l0mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA -01 2mA Collector-emitter saturation voltage Vers (V) imA -2 -4 -6 ~8 0.01 ~W +12 Collector-emitter voltage Vu. (V) ~0.3 0.03 -0. 2S5A1500 Vee {sat) Ic Ig Ip=5 Tco=100C 25C ~03 -1 -3 -10 -30 -100 Collector current Ic (A) hreIc frIc 1000 ; 7 VcE=5V Voge 10V Te=25C 300 a x= lao 2 > 30. oS ov = 10 o = Ee & 3 a 5 eG 1 03 at -O0.1 -03 -i -~3 -10 -0.01 --0.03 -O1 -0.3 =I ~3 10 Collector current Ic (A) Collector current fe (A) ton, tstg, trIc Area of safe operation (ASO) ~ 100 Pulsed tw= ms W Duty cycle =1% += 25C Ic: Tp=5 (-[p1=IB2) 30 Voc= 10 Tc=29C ~ 710 s so; a E a -1 L g -03 3 S ~ol = 0.03 -0.01 Collector current Iy (A) 127 -1 -3) -10 30 -100 300 1000 Collector-emitter voltage Vi: (V) Panasonic Power Transistors . ~ - 28A1500 Rint : Reh was measured at Ta=25C and under natural convection. {Without heat sink 1000 {2)With a 100 x 100 2mm Al heat sink 100 Transient thermal resistance Rua, (C/W) Ol : w-4 1w73 lo-2 10-1 1 10 102 198 104 Time t (s) MB 932465e 0016134 53, Panasonic 128