DATA SH EET
Product specification
Supersedes data of 1996 Mar 20 1999 May 26
DISCRETE SEMICONDUCTORS
BAT17
Schottky barrier diode
a
ge
M3D088
1999 May 26 2
Philips Semiconductors Product specification
Schottky barrier diode BAT17
FEATURES
•Low forward voltage
•Small SMD package
•Low capacitance.
APPLICATIONS
•UHF mixer
•Sampling circuits
•Modulators
•Phase detection.
DESCRIPTION
Planar Schottky barrier diode in a small SOT23 plastic SMD package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM171
2
n.c. 1
3
Marking code: A3p = made in Hong Kong; A3t = made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
VRcontinuous reverse voltage −4V
I
Fcontinuous forward current −30 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −100 °C
1999 May 26 3
Philips Semiconductors Product specification
Schottky barrier diode BAT17
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.2
IF= 0.1 mA 350 mV
IF=1mA 450 mV
IF=10mA 600 mV
IRreverse current VR= 3 V; see Fig.3 0.25 µA
VR=3V;T
amb =60°C; see Fig.3 1.25 µA
rDdiode forward resistance f = 1 kHz; IF= 5 mA 15 Ω
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.4 1pF
F noise figure f = 900 MHz; note 1 8dB
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
1999 May 26 4
Philips Semiconductors Product specification
Schottky barrier diode BAT17
GRAPHICAL DATA
Fig.2 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 100 °C.
(2) Tamb =60°C.
(3) Tamb =25°C.
(4) Tamb =−40 °C.
handbook, halfpage
10
2
10
1
0
MLC795
600 800400200 VF (mV)
10
−1
10
−2
IF
(mA)
(1)
(2)
(3)
(4)
(1) Tamb = 100 °C.
(2) Tamb =60°C.
(3) Tamb =25°C.
(4) Tamb =−40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
104
103
102
10
1
10 10
MLC796
213
V (V)
IR
(nA)
R
(1)
(2)
(3)
(4)
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
handbook, halfpage
01234
0.4
0.8
MLC797
0.7
0.6
0.5
V (V)
R
Cd
(pF)
1999 May 26 5
Philips Semiconductors Product specification
Schottky barrier diode BAT17
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 May 26 6
Philips Semiconductors Product specification
Schottky barrier diode BAT17
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 26 7
Philips Semiconductors Product specification
Schottky barrier diode BAT17
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 65
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Printed in The Netherlands 115002/02/pp8 Date of release: 1999 May 26 Document order number: 9397 750 05881
