© 2004 IXYS All rights reserved 1 - 4
MCC 220
MCD 220
419
Symbol Conditions Maximum Ratings
ITRMS, IFRMS TVJ = TVJM 400 A
ITAVM, IFAVM TC = 85°C; 180° sine 250 A
ITSM, IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 8500 A
VR = 0 t = 8.3 ms (60 Hz), sine 9000 A
TVJ = TVJM t = 10 ms (50 Hz), sine 7000 A
VR = 0 t = 8.3 ms (60 Hz), sine 7600 A
i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 360000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 336000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 245000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 240000 A2s
(di/dt)cr TVJ = TVJM; repetitive, IT = 750 A 100 A/µs
f = 50 Hz; tP = 200 µs
VD = 2/3 VDRM
IG = 1 A non repetitive, IT = 250 A 800 A/µs
diG/dt = 1 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/µs
RGK = ; method 1 (linear voltage rise)
PGM TVJ = TVJM;t
P = 30 µs 120 W
IT = ITAVM;t
P = 500 µs 60 W
PGAV 20 W
VRGM 10 V
TVJ -40...+140 °C
TVJM 140 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS; t = 1 min 3000 V~
IISOL 1 mA; t = 1 s 3600 V~
MdMounting torque (M5) 2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.
Weight Typical including screws 320 g
VRSM VRRM Type
VDSM VDRM
V V Version 1 Version 1
900 800 MCC 220-08io1 MCD 220-08io1
1300 1200 MCC 220-12io1 MCD 220-12io1
1500 1400 MCC 220-14io1 MCD 220-14io1
1700 1600 MCC 220-16io1 MCD 220-16io1
1900 1800 MCC 220-18io1 MCD 220-18io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
ITRMS = 2x400 A
ITAVM = 2x250 A
VRRM = 800-1800 V
Features
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
Advantages
Space and weight savings
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
Thyristor Modules
Thyristor/Diode Modules
7654
2
3
1
MCD
MCC
3671 542
31542
© 2004 IXYS All rights reserved
2 - 4
MCC 220
MCD 220
419
Symbol Conditions Characteristic Values
IRRM TVJ = TVJM; VR = VRRM; VD = VDRM 70 mA
IDRM 40 mA
VT, VFIT /IF = 600 A; TVJ = 25°C 1.53 V
VT0 For power-loss calculations only (TVJ = 140°C) 0.9 V
rT1.0 m
VGT VD = 6 V; TVJ = 25°C 2 V
TVJ = -40°C 3 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.25 V
IGD 10 mA
ILTVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA
IG = 0.45 A; diG /dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = 150 mA
tgd TVJ = 25°C; VD = ½ VDRM s
IG = 1 A; diG /dt = 1 A/µs
tqTVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
QSTVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs 760 µC
IRM 275 A
RthJC per thyristor/diode; DC current 0.139 K/W
per module other values 0.0695 K/W
RthJK per thyristor/diode; DC current see Fig. 8/9 0.179 K/W
per module 0.0895 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC MCD
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250, material brass
20 12
14
© 2004 IXYS All rights reserved 3 - 4
MCC 220
MCD 220
419
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 i2dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
© 2004 IXYS All rights reserved
4 - 4
MCC 220
MCD 220
419
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
t
s
ZthJK
K/W
t
s
ZthJC
K/W
30°
DC
0
0
30°
DC
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJC for various conduction angles d:
dR
thJC (K/W)
DC 0.139
180°C 0.141
120°C 0.142
60°C 0.142
30°C 0.143
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0037 0.0099
2 0.0177 0.168
3 0.1175 0.456
RthJK for various conduction angles d:
dR
thJK (K/W)
DC 0.179
180°C 0.181
120°C 0.182
60°C 0.183
30°C 0.183
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0037 0.0099
2 0.0177 0.168
3 0.1175 0.456
4 0.04 1.36