LITE-ON SEMICONDUCTOR MBR3030PT thru 3060PT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications F E A P G Q O K PIN 2 1 B 3 D H C I MECHANICAL DATA Case : TO-3P molded plastic Polarity : As marked on the body Weight : 0.2 ounces, 5.6 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) N J L M L PIN 1 PIN 2 CASE PIN 3 TO-3P MIN. MAX. 15.75 16.25 21.25 21.75 20.10 19.60 3.78 4.38 1.88 2.08 4.87 5.13 4.4TYP. 2.16 1.90 2.93 3.22 1.12 1.22 2.90 3.20 5.70 5.20 2.10 2.40 0.76 0.51 2.18 1.93 20 TYP 10 TYP All Dimensions in millimeter DIM. A B C D E F G H I J K L M N O P Q MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) SYMBOL VRRM VRMS VDC MBR 3030PT 30 21 30 MBR 3035PT 35 24.5 35 MBR 3040PT 40 28 40 MBR 3045PT 45 31.5 45 MBR 3050PT 50 35 50 MBR 3060PT 60 42 60 UNIT V V V I(AV) 30 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 200 A Voltage Rate of Change (Rated VR) dv/dt 10000 V/us @TC=125 C IF =20A @ TJ =25 C IF =20A @ TJ =125 C IF =30A @ TJ =25 C IF =30A @ TJ =125 C Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ =125 C Typical Thermal Resistance (Note 2) Typical Junction Capacitance per element (Note 3) Operating Temperature Range Storage Temperature Range Maximum Forward Voltage (Note 1) VF 0.60 0.76 0.72 0.70 0.65 - IR 1 60 5 100 R0JC V mA 1.4 C/W CJ 500 pF TJ TSTG -55 to +150 -55 to +175 C C NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. REV. 4, Aug-2007, KTHD09 AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 30 20 10 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES MBR3030PT thru MBR3060PT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 200 150 100 50 8.3ms Single Half-Sine-Wave 1 175 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 10 TJ = 75 C 1.0 0.1 TJ = 25 C 0.01 10 MBR3050PT ~ MBR3060PT MBR3030PT~ MBR3045PT 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 0.1 0 20 40 60 80 100 140 120 0 0.1 0.2 0.3 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 0.4 0.5 0.6 0.7 0.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 0.9