Ordering number : ENN6559 5LN01SP 5LN01SP N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features * * * Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2180 [5LN01SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3 0.7 Specifications Parameter Gate-to-Source Voltage Drain Current (DC) 1 : Source 2 : Drain 3 : Gate 3.0 3.8nom Absolute Maximum Ratings at Ta=25C Drain-to-Source Voltage 1.3 0.7 1 2 1.3 Symbol SANYO : SPA Conditions Ratings Unit VDSS VGSS 50 V 10 V ID 0.1 A 0.4 A Drain Current (Pulse) IDP PW10s, duty cycle1% Allowable Power Dissipation PD Tch 0.25 W Channel Temperature 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Conditions V(BR)DSS IDSS typ 50 IGSS VGS(off) ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A 0.4 yfs VDS=10V, ID=50mA 0.13 Marking : YB (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings min max Unit V 10 A 10 A 1.3 0.18 V S Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: 5LN01SP/D 5LN01SP Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=50mA, VGS=4V ID=30mA, VGS=2.5V Input Capacitance RDS(on)3 Ciss ID=10mA, VGS=1.5V VDS=10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD Ratings Conditions min typ Unit max 6 7.8 7.1 9.9 10 20 6.6 pF VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit 4.7 pF 1.7 pF 18 ns See specified Test Circuit 42 ns See specified Test Circuit 190 ns See specified Test Circuit 105 ns VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA 1.57 nC 0.20 nC VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0 0.32 nC 0.85 1.2 V Switching Time Test Circuit 4V 0V VDD=25V VIN ID=50mA RL=500 VIN PW=10s D.C.1% D VOUT G 5LN01SP 50 ID -- VDS 6.0 V VGS=1.5V 0.05 0.04 0.03 0.12 0.10 0.08 0.06 0.04 0.01 0.02 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 1.0 0 0.5 1.0 1.5 2.0 Gate-to-Source Voltage, VGS -- V IT00054 RDS(on) -- VGS 12 10 9 50mA 8 ID=30mA 7 6 5 4 3.0 IT00055 VGS=4V 7 11 2.5 RDS(on) -- ID 100 Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 0.14 0.02 0 25 C 0.16 0.07 0.06 25C 0.18 Ta= -- 4.0V 0.08 VDS=10V 5V V 2.0 2. Drain Current, ID -- A 3.0 3.5V 0.09 ID -- VGS 0.20 V 0.10 Drain Current, ID -- A S 75 C P.G 5 3 2 10 Ta=75C 25C --25C 7 5 3 2 3 2 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 1.0 0.01 IT00056 Rev.0 I Page 2 of 4 I www.onsemi.com 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT00057 5LN01SP RDS(on) -- ID 100 5 3 2 Ta=75C 10 7 5 --25C 25C 3 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A =3 ID 50 I D= 6 m VG A, 4. S= 0V 4 2 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 7 2 10 Ciss Coss 3 2 Crss 5 10 15 20 25 30 2 0.01 3 IT00059 VDS=10V 5 3 5C 2 Ta= -- 2 25C 75C 0.1 7 5 3 2 2 3 5 7 2 0.1 3 IT00061 SW Time -- ID VDD=25V VGS=4V 5 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 2 3 5 7 10 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA 8 7 6 5 4 3 2 1 1.0 0 7 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 5 7 9 5 5 3 yfs -- ID IT00062 f=1MHz 7 2 10 0.01 1.1 Ciss, Coss, Crss -- VDS 100 2 7 Switching Time, SW Time -- ns --25 C 5C 25 C Ta= 7 Forward Current, IF -- A 2 0.01 0.5 3 1000 0.1 3 25C Drain Current, ID -- A 2 5 --25C 5 IT00060 VGS=0 7 7 0.01 0.01 160 IF -- VSD 3 Ta=75C 10 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- =2 V GS 0 8 2 1.0 .5V , mA 3 IT00058 12 10 5 1.0 0.001 3 RDS(on) -- Ta 14 VGS=1.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 7 RDS(on) -- ID 100 VGS=2.5V 35 40 Drain-to-Source Voltage, VDS -- V 45 50 0 0 IT00064 Rev.0 I Page 3 of 4 I www.onsemi.com 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 1.8 IT00065 5LN01SP PD -- Ta Allowable Power Dissipation, PD -- W 0.3 0.25 0.2 0.15 0.1 0.05 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT02005 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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