VDSS ID (cont) RDS(on) trr IXFH 12N120 High Voltage HiPerFET Power MOSFET = 1200 V = 12 A = 1.4 300 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M 1200 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 48 A 12 A 30 1.0 mJ J 10 V/ns 500 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C IAR EAR EAS TC TC = 25C = 25C IS IDM, di/dt 100 A/s, VDD VDSS, dv/dt TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain TJ 150C, RG = 2 Features PD TC = 25C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 C z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z z Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. z z z VDSS VGS = 0 V, ID = 1 mA 1200 VGS(th) VDS = VGS, ID = 4 mA 3 IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 25C TJ = 125C VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved V 5 V 100 nA 50 3 A mA 1.4 Fast switching times Applications z Symbol Rugged polysilicon gate cell structure Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages z z z Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density DS99334(02/05) IXFH 12N120 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 6 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 10 S 3400 pF 280 pF C rss 105 pF td(on) 24 ns tr VGS = 10 V, VDS = 0.5 * VDSS, 0.5 ID25 25 ns td(off) RG = 1.5 (External) 35 ns tf 17 ns Qg(on) 95 nC 22 nC 50 nC Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 Qgd RthJC 0.25 RthCK 0.25 Source-Drain Diode TO-247 AD Outline K/W K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V t rr Irm QRM IF = IS, -di/dt = 100 A/s, VR = 100 V 300 ns A C 6.0 1.2 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFH 12N120 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25C @ 25 C 20 12 11 VGS = 10V 10 8V 7.5V VGS = 10V 18 8V 16 14 7V 8 I D - Amperes I D - Amperes 9 7 6 6.5V 5 4 6.5V 12 10 7V 8 6 6.5V 3 4 6V 2 6V 2 1 0 0 0 2 4 6 8 10 12 14 16 18 0 3 6 9 Fig. 3. Output Characteristics @ 125C 18 21 24 27 30 3.1 VGS = 10V 11 2.8 9 8 R D S ( o n ) - Normalized 8V 7V 10 I D - Amperes 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs . Junction Tem perature 12 6.5V 7 6 6V 5 4 3 5.5V 2 VGS = 10V 2.5 2.2 1.9 I D = 12A 1.6 I D = 6A 1.3 1 0.7 5V 1 0.4 0 0 4 8 12 16 20 24 28 32 36 -50 40 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 0.5 ID25 Value vs. ID 14 2.8 2.6 VGS = 10V 12 2.4 10 TJ = 125C 2.2 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts V D S - Volts 2 1.8 1.6 1.4 8 6 4 TJ = 25C 1.2 2 1 0.8 0 0 2 4 6 8 10 12 I D - Amperes (c) 2005 IXYS All rights reserved 14 16 18 20 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 12N120 Fig. 8. Trans conductance Fig. 7. Input Adm ittance 20 16 18 14 16 10 8 6 TJ = 125C 4 10 8 6 4 2 2 0 0 5 25C 125C 12 25C -40C 4.5 TJ = -40C 14 g f s - Siemens I D - Amperes 12 5.5 6 6.5 7 0 7.5 2 4 6 V G S - Volts Fig. 9. Source Current vs. Source -To-Drain Voltage 10 33 9 VDS = 600V 8 I D = 6A 7 I G = 10mA 30 27 24 VG S - Volts I S - Amperes 10 12 14 16 18 90 100 Fig. 10. Gate Charge 36 21 18 15 TJ = 125C 12 8 I D - Amperes 6 5 4 3 9 2 TJ = 25C 6 1 3 0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 1 V S D - Volts 10 20 30 40 50 60 70 80 Q G - nanoCoulombs Fig. 12. Maxim um Trans ient Therm al Resistance Fig. 11. Capacitance 10000 1.00 C iss R( t h ) J C - C / W Capacitance - picoFarads f = 1MHz 1000 C oss 100 0.10 C rss 10 0.01 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000