IXFH12N120 - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1200 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1200 V

VGS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C12A

IDM TC= 25°C, pulse width limited by TJM 48 A

IAR 12 A

EAR TC= 25°C30mJ

EAS TC= 25°C 1.0 J

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns

TJ≤ 150°C, RG = 2 Ω

PDTC= 25°C 500 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting torque 1.13/10 Nm/lb.in.

Weight 6g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDSS VGS = 0 V, ID = 1 m A 1200 V

VGS(th) VDS = VGS, ID = 4 mA 3 5 V

IGSS VGS = ±30 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS TJ = 25°C50µA

VGS = 0 V TJ = 125°C3mA

RDS(on) VGS = 10 V, ID = 0.5 • ID25 1.4 Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

G = Gate, D = Drain,

S = Source, TAB = Drain

Features

zInternational standard package

JEDEC TO-247 AD

zLow RDS (on) HDMOSTM process

zRugged polysilicon gate cell structure

zFast switching times

Applications

zSwitch-mode and resonant-mode

power supplies

zMotor controls

zUninterruptible Power Supplies (UPS)

zDC choppers

Advantages

zEasy to mount with 1 screw

(isolated mounting screw hole)

zSpace savings

zHigh power density

D (TAB)

DS99334(02/05)

IXFH 12N120 VDSS =1200 V

ID (cont) = 12 A

RDS(on) = 1.4 Ω Ω

Ω Ω

Ω

trr ≤≤

≤≤

≤ 300 ns

Preliminary Data Sheet

High Voltage

HiPerFET Power

MOSFET

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

gfs VDS = 20 V; ID = 0.5 ID25, pulse test 6 10 S

Ciss 3400 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 280 pF

Crss 105 pF

td(on) 24 ns

trVGS = 10 V, VDS = 0.5 • VDSS, 0.5 ID25 25 ns

td(off) RG = 1.5 Ω (External) 35 ns

tf17 ns

Qg(on) 95 nC

Qgs VGS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 ID25 22 nC

Qgd 50 nC

RthJC 0.25 K/W

RthCK 0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISVGS = 0 V 12 A

ISM Repetitive; pulse width limited by TJM 48 A

VSD IF = IS, VGS = 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 300 ns

Irm 6.0 A

QRM 1.2 µC

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-247 AD Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

1 2 3

IXFH 12N120

IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505

of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

2

4

6

8

10

12

14

16

18

20

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Vo lts

I

D

- Amperes

V

GS

= 10 V

8V

7V

6V

6.5V

Fig. 3. Output Characteristics

@ 125

º

C

0

1

2

3

4

5

6

7

8

9

10

11

12

0 4 8 1216202428323640

V

D S

- Volts

I

D

- Amp ere s

V

GS

= 1 0V

8V

7V

5V

5.5V

6.5V

6V

Fig. 1. Output Characteristics

@ 25

º

C

0

1

2

3

4

5

6

7

8

9

10

11

12

024681012141618

V

D S

- Vo lts

I

D

- A mperes

V

GS

= 1 0V

8V

7.5V

7V

6V

6.5V

Fig. 4. R

DS(on

)

Normalized to 0.5 I

D25

Value vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Norm alize

d

I

D

= 12 A

I

D

= 6 A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

2

4

6

8

10

12

14

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- A mperes

Fig. 5. R

DS(on)

Normalized to

0.5 I

D25

Value vs. I

D

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

0 2 4 6 8 101214161820

I

D

- Amperes

R

D S ( o n )

- N orma l ize

d

T

J

= 125ºC

T

J

= 25 ºC

V

GS

= 10 V

IXFH 12N120

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 12N120

Fig. 11. Capacitance

10

100

1000

10000

0 5 10 15 20 25 30 35 40

V

D S

- Vo lts

Capacitance - picoFarads

Ciss

Coss

Crss

f = 1MHz

Fig. 10. G ate Charge

0

1

2

3

4

5

6

7

8

9

10

0 102030405060708090100

Q

G

- nanoCoul o mbs

V

G S

- Vo lt s

V

DS

= 600V

I

D

= 6A

I

G

= 10 m A

Fig. 7. Input Admittance

0

2

4

6

8

10

12

14

16

4.555.566.577.5

V

G S

- Vo lts

I

D

- Amp ere s

T

J

= 125ºC

25ºC

-40ºC

Fig. 8. Transconduc tance

0

2

4

6

8

10

12

14

16

18

20

024681012141618

I

D

- Ampere s

g

f s

- Si emens

T

J

= - 40 ºC

25ºC

125ºC

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0

3

6

9

12

15

18

21

24

27

30

33

36

0.40.50.60.70.80.9 1

V

S D

- Vo lts

I

S

- Amp e res

T

J

= 12 5 ºC

T

J

= 25 ºC

Fig. 1 2. Maximum Transient Thermal

Resistance

0.01

0.10

1.00

1 10 100 1000

Pulse Width - milliseconds

R

( t h ) J C

-

º

C /

W