MBR160RL - Motorola / Freescale Semiconductor

Rectifier Device Data

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. . . employing the Schottky Barrier principle in a large area metal–to–silicon

power diode. State–of–the–art geometry features epitaxial construction with

oxide passivation and metal overlap contact. Ideally suited for use as rectifiers

in low–voltage, high–frequency inverters, free wheeling diodes, and polarity

protection diodes.

•Low Reverse Current

•Low Stored Charge, Majority Carrier Conduction

•Low Power Loss/High Efficiency

•Highly Stable Oxide Passivated Junction

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 gram (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C

Max. for 10 Seconds, 1/16″ from case

•Shipped in plastic bags, 1000 per bag

•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the

part number

•Polarity: Cathode Indicated by Polarity Band

•Marking: B150, B160

MAXIMUM RATINGS

Rating Symbol MBR150 MBR160 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

50 60 Volts

RMS Reverse Voltage VR(RMS) 35 42 Volts

Average Rectified Forward Current (2)

(VR(equiv)

0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting,

see Note 3, TA = 55°C)

IO1 Amp

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C) IFSM 25 (for one cycle) Amps

Operating and Storage Junction Temperature Range (Reverse V oltage applied) TJ, Tstg

65 to +150 °C

Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C

THERMAL CHARACTERISTICS (Notes 3 and 4)

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RθJA 80 °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (1)

(iF = 0.1 A)

(iF = 1 A)

(iF = 3 A)

vF0.550

0.750

1.000

Volt

Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)

(TL = 25°C)

(TL = 100°C)

iR0.5

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.

(2) Lead Temperature reference is cathode lead 1/32″ from case.

Preferred devices are Motorola recommended choices for future use and best overall value.

 Motorola, Inc. 1996

Order this document

by MBR150/D

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SEMICONDUCTOR TECHNICAL DATA

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SCHOTTKY BARRIER

RECTIFIERS

1 AMPERE

50, 60 VOLTS

CASE 59–04

PLASTIC

MBR160 is a

Motorola Preferred Device

Rev 1

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2Rectifier Device Data

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current*

Figure 3. Forward Power Dissipation

1.4

vF, INSTANTANEOUS VOLTAGE (VOLTS)

1.0

VR, REVERSE VOLTAGE (VOL TS)

40 700

0.1

0.05

0.001

IF(AV), A VERAGE FOR W ARD CURRENT (AMPS)

1.00

4.0

2.0

02.0

iF, INSTANTANEOUS FORW ARD CURRENT (AMPS)

PF(AV), A VERAGE FORWARD

0.1

0.60.2 0.4 0.8 1.0

50 6010 20 30

3.0 4.0 5.0

01.6

5.0

3.0

1.0

, REVERSE CURRENT (mA)

0.2

0.5

1.0

0.02

0.01

0.005

0.002

TJ = 150

C100

C25

IPK/IAV = 20

SQUARE

WAVE

10 5

TJ = 150

*The curves shown are typical for the highest voltage device in the volt-

age grouping. Typical reverse current for lower voltage selections can

be estimated from these same curves if VR is sufficiently below rated VR.

125

5.0

2.0

100

POWER DISSIPA TION (W ATTS)

1.2

0.07

0.05

0.03

0.02

0.2

0.3

0.5

0.7

2.0

3.0

5.0

7.0

THERMAL CHARACTERISTICS

Figure 4. Thermal Response

r(t), TRANSIENT THERMAL RESIST ANCE

(NORMALIZED)

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k

0.07

0.05

0.03

0.02

0.01

0.1

t, TIME (ms)

0.7

0.5

0.3

0.2

1.0

JL(t) = Z

•

r(t)

Ppk Ppk

t1TIME

DUTY CYCLE, D = tp/t1

PEAK POWER, Ppk, is peak of an

equivalent square power pulse.

∆

TJL = Ppk

•

JL [D + (1 – D)

•

r(t1 + tp) + r(tp) – r(t1)]

where

∆

TJL = the increase in junction temperature above the lead temperature

r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.:

r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.

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Rectifier Device Data

Figure 5. Steady–State Thermal Resistance Figure 6. Typical Capacitance

3/40

L, LEAD LENGTH (INCHES)

VR, REVERSE VOLTAGE (VOL TS)

50 800

RJL, THERMAL RESISTANCE,

3/81/8 1/4 1/2 5/8 7/8 1.0 60 7010 20 30 40

100

200

C, CAPACITANCE (pF)

JUNCTION–T O–LEAD ( C/W)

BOTH LEADS TO HEAT SINK,

EQUAL LENGTH

MAXIMUM

TYPICAL

10090

TJ = 25

f = 1 MHz

NOTE 3 — MOUNTING DATA:

Data shown for thermal resistance junction–to–ambient

(RθJA) for the mounting shown is to be used as a typical

guideline values for preliminary engineering or in case the tie

point temperature cannot be measured.

Typical Values for RθJA in Still Air

Mounting Lead Length, L (in)

RθJA

Method 1/8 1/4 1/2 3/4

θJA

152 65 72 85 °C/W

2 67 80 87 100 °C/W

3 — 50 °C/W

NOTE 4 — THERMAL CIRCUIT MODEL:

(For heat conduction through the leads)

TA(A) TA(K)

TL(A) TC(A) TJTC(K) TL(K)

S(A) R

L(A) R

J(A) R

θJ(K)

L(K) R

S(K)

Use of the above model permits junction to lead thermal

resistance for any mounting configuration to be found. For a

given total lead length, lowest values occur when one side of

the rectifier is brought as close as possible to the heat sink.

Terms in the model signify:

TA = Ambient Temperature TC = Case Temperature

TL = Lead Temperature TJ = Junction Temperature

RθS = Thermal Resistance, Heat Sink to Ambient

RθL = Thermal Resistance, Lead to Heat Sink

RθJ = Thermal Resistance, Junction to Case

PD = Power Dissipation

Mounting Method 1

P.C. Board with

1–1/2″ x 1–1/2″

copper surface.

Mounting Method 3

P.C. Board with

1–1/2″ x 1–1/2″

copper surface.

BOARD GROUND

PLANE

VECTOR PIN MOUNTING

Mounting Method 2

ÉÉÉÉÉÉÉ

ÉÉÉÉÉÉÉÉ

L = 3/8

″

(Subscripts A and K refer to anode and cathode sides,

respectively.) Values for thermal resistance components are:

RθL = 100°C/W/in typically and 120°C/W/in maximum.

RθJ = 36°C/W typically and 46°C/W maximum.

NOTE 5 — HIGH FREQUENCY OPERATION:

Since current flow in a Schottky rectifier is the result of ma-

jority carrier conduction, it is not subject to junction diode for-

ward and reverse recovery transients due to minority carrier

injection and stored charge. Satisfactory circuit analysis work

may be performed by using a model consisting of an ideal

diode in parallel with a variable capacitance. (See Figure 6.)

Rectification efficiency measurements show that operation

will be satisfactory up to several megahertz. For example,

relative waveform rectification efficiency is approximately 70

percent at 2 MHz, e.g., the ratio of dc power to RMS power in

the load is 0.28 at this frequency, whereas perfect rectifica-

tion would yield 0.406 for sine wave inputs. However, in con-

trast to ordinary junction diodes, the loss in waveform effi-

ciency is not indicative of power loss: it is simply a result of

reverse current flow through the diode capacitance, which

lowers the dc output voltage.

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4Rectifier Device Data

PACKAGE DIMENSIONS

CASE 59–04

ISSUE M

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A5.97 6.60 0.235 0.260

B2.79 3.05 0.110 0.120

D0.76 0.86 0.030 0.034

K27.94 ––– 1.100 –––

NOTES:

1. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO–41 OUTLINE SHALL APPLY.

2. POLARITY DENOTED BY CATHODE BAND.

3. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

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