SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
FEATURES
Ultra High Speed Asynchronous Operation
Fully Static, No Clocks
Multiple center power and ground pins for improved
noise immunity
Easy memory expansion with CE\ and OE\
options
All inputs and outputs are TTL-compatible
Single +5V Power Supply +/- 10%
Data Retention Functionality Testing (Contact Factory)
Cost Efficient Plastic Packaging
Extended Testing Over -55ºC to +125ºC for plastics
Plastic 36 pin PSOJ is fully compatible with the
Ceramic 36 pin SOJ
3.3V Future Offering
OPTIONS MARKING
Timing
12ns access -12
15ns access -15
17ns access -17
20ns access -20
25ns access -25
35ns access -35
45ns access -45
Operating Temperature Ranges
Military (-55oC to +125oC) XT
Industrial (-40oC to +85oC) IT
Package(s)
Ceramic LCC EC No. 210
Ceramic Flatpack F No. 307
Plastic SOJ DJ No. 903
Ceramic SOJ ECJ No.503
2V data retention/low power L (Consult Factory)
Radiation Tolerant (EPI) E
PIN ASSIGNMENT
(Top View)
36-Pin SOJ (DJ & ECJ)
36-Pin CLCC (EC)
GENERAL DESCRIPTION
The AS5C512K8 is a high speed SRAM. It offers flexibility in
high-speed memory applications, with chip enable (CE\) and output
enable (OE\) capabilities. These features can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +5V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5C512K8DJ offers the convenience and reliability of the
AS5C512K8 SRAM and has the cost advantage of a durable plastic.
The AS5C512K8DJ is footprint compatible with 36 pin CSOJ
package of the SMD 5692-95600.
36-Pin Flat Pack (F)
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-95600
•SMD 5962-95613
•MIL-STD-883
512K x 8 SRAM
HIGH SPEED SRAM with
REVOLUTIONARY PINOUT
For more products and information
please visit our web site at
www.austinsemiconductor.com
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
TRUTH TABLE
MODE OE\ CE\ WE\ I/O POWER
STANDBY X H X HIGH-Z STANDBY
READ L L H Q ACTIVE
NOT SELECTED H L H HIGH-Z ACTIVE
WRITE X L L D ACTIVE
SNOITCNUFNIP
81A-0AstupnIsserddA
\EWelbanEetirW
\ECelbanEpihC
\EOelbanEtuptuO
O/I
0
O/I-
7
stuptuO/stupnIataD
V
CC
rewoP
V
SS
dnuorG
CNnoitcennoCoN
X = Don’t Care
VCC GND
INPUT BUFFER
4,194,304-BIT
MEMORY ARRAY
1024 ROWS X
4096 COLUMNS
I/O
CONTROLS
COLUMN DECODER
ROW DECODER
*POWER
DOWN
CE\
OE\
WE\
DQ8
DQ1
A0-A18
*On the low voltage Data Retention option.
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Vcc ..............................................................................-.5V to +7.0V
Storage Temperature (Plastic)......................-65°C to +150°C
Storage Temperature (Ceramic)...................-55°C to +125°C
Short Circuit Output Current (per I/O)…........................20mA
Voltage on any Pin Relative to Vss.................-.5V to Vcc+1V
Maximum Junction Temperature**..............................+150°C
Power Dissipation ................................................................1W
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability .
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow , and humidity .
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%)
'(6&5,37,21 6<0        81,76 127(6
,
&&63
       P$
/9HUVLRQ2QO\ ,
&&/3
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,
6%763
       P$
/9HUVLRQ2QO\ ,
6%7/3
       P$
,
6%&63
       P$
/9HUVLRQ2QO\ ,
6%&/3
       P$
0$;
3RZHU6XSSO\
&XUUHQW6WDQGE\
&21',7,216
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2XWSXWV2SHQ
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,+
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2XWSXWV2SHQ
&(?!9FF99FF 0$;
9
,1
9VV9RU
9
,1
!9FF9I 
3RZHU6XSSO\
&XUUHQW2SHUDWLQJ
      
    

  
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µ
"
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µ
"
#  
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
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) 
CAPACITANCE
PARAMETER CONDITIONS SYMBOL MAX UNITS NOTES
Input Capacitance C
I
12 pF 4
Output Capactiance Co 14 pF 4
T
A
= 25
o
C, f = 1MHz
V
IN
= 0
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC < TA < +125oC or -40oC to +85oC; Vcc = 5V +10%)
0,1 0$; 0,1 0$; 0,1 0$; 0,1 0$; 0,1 0$; 0,1 0$; 0,1 0$;
5($'&<&/(
5HDG&\FOH7LPH W
5&
       QV
$GGUHVV$FFHVV7LPH W
$$
       QV
&KLS(QDEOH$FFHVV7LPH W
$&(
       QV
2XWSXW+ROG)URP$GGUHVV&KDQJH W
2+
 QV
&KLS(QDEOHWR2XWSXWLQ/RZ= W
/=&(
 QV
&KLS'LVDEOHWR2XWSXWLQ+LJK= W
+=&(
QV
2XWSXW(QDEOH$FHVV7LPH W
$2(
    QV
2XWSXW(QDEOHWR2XWSXWLQ/RZ= W
/=2(
 QV
2XWSXW'LVDEOHWR2XWSXWLQ+LJK= W
+=2(
QV
:5,7(&<&/(
:5,7(&\FOH7LPH W
:&
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&KLS(QDEOHWR(QGRI:ULWH W
&:
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$GGUHVV9DOLGWR(QGRI:ULWH W
$:
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$GGUHVV6HWXS7LPH W
$6
 QV
$GGUHVV+ROG)URP(QGRI:ULWH W
$+
 QV
:5,7(3XOVH:LGWK W
:3
       QV
'DWD6HWXS7LPH W
'6
     QV
'DWD+ROG7LPH W
'+
 QV
:ULWH'LVDEOHWR2XWSXWLQ/RZ= W
/=:(
 QV
:ULWH(QDEOHWR2XWSXWLQ+LJK= W
+=:(
QV
'(6&5,37,21  
 81,76 127(66<0 

SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
167 ohms167 ohms 1.73V1.73V
C=5pFC=30pF
QQ
Input pulse levels ...................................................... Vss to 3.0V
Input rise and fall times ......................................................... 3ns
Input timing reference levels ............................................... 1.5V
Output reference levels ........................................................ 1.5V
Output load ................................................. See Figures 1 and 2
NOTES
1 . All voltages referenced to VSS (GND).
2 . -2V for pulse width < 20ns
3. ICC is dependent on output loading and cycle rates.
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV from steady state voltage.
7. At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than
tLZWE.
8 . WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12 . Chip enable and write enable can initiate and
terminate a WRITE cycle.
1 3 . Output enable (OE\) is inactive (HIGH).
1 4 . Output enable (OE\) is active (LOW).
1 5. ASI does not warrant functionality nor reliability of
any product in which the junction temperature
exceeds 150°C. Care should be taken to limit power to
acceptable levels.
Fig. 1 Output Load
Equivalent Fig. 2 Output Load
Equivalent
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
AC TEST CONDITIONS
'(6&5,37,21 6<0 0,1 0$; 81,76 127(6
9FFIRU5HWHQWLRQ'DWD 9'5 9
'DWD5HWHQWLRQ&XUUHQW 9FF 9 ,&&'5  P$
&KLS'HVHOHFWWR'DWD W&'5 QV
2SHUDWLRQ5HFRYHU\7LPH W5 PV 
&21',7,216
&(?!9&&9
9,1!9&&RU9
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
Austin Semiconductor, Inc.
LOW VCC DATA RETENTION WAVEFORM
READ CYCLE NO. 18, 9
(Address Controlled, CE\ = OE\ = VIL, WE\ = VIH)
READ CYCLE NO. 2 2
(WE\ = VIH)
1234
1
23
4
1
23
4
1
23
4
1234
Don’t Care
Undefined
123456
1
2345
6
1
2345
6
1
2345
6
123456
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
12345
1
234
5
1
234
5
1
234
5
1
234
5
1
234
5
1
234
5
12345
1234567
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1234567
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
1234
1
23
4
1
23
4
1
23
4
1
23
4
1
23
4
1
23
4
1234
123456
1
2345
6
1
2345
6
1
2345
6
1
2345
6
1
2345
6
1
2345
6
123456
DATA RETENTION MODE
4.5V 4.5V
VDR>2V
VDR
tCDR tR
VCC
CE\
VIH-
VIL-
ADDRESS
tRC
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
234567890
234567890
234567890
234567890
12
12
12
12
12
12
12
12
12
12
12
tOH tAA
Previous Data Valid Data Valid
I/O, DATA IN
& OUT
VALID
ADDRESS tRC
tAOE
CE\
tLZOE
tACE
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
1234567
12345
1
234
5
1
234
5
1
234
5
1
234
5
12345
1
1
1
1
1
1
1
1
1
1
1
1
Data Valid
High-Z
tHZOE
tHZCE
tPD
I/O, DATA IN
& OUT
Icc
tLZCE
tPU
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
Austin Semiconductor, Inc.
WRITE CYCLE NO. 112
(CE Controlled)
WRITE CYCLE NO. 212, 13
(Write Enabled Controlled)
1234567890
1234567890
1234567890
1234567890
123456789012345678901234
1
2345678901234567890123
4
1
2345678901234567890123
4
123456789012345678901234
12345678901234567890123456
1
234567890123456789012345
6
1
234567890123456789012345
6
12345678901234567890123456
123456
123456
123456
123456
123456789012345678
1
2345678901234567
8
1
2345678901234567
8
123456789012345678
123456789012345678
1
2345678901234567
8
1
2345678901234567
8
123456789012345678
ADDRESS
tWC
tCW
CE\
tAW
Data Valid
tAH
tAS
I/O, DAT A OUT
tWP1
tDS tDH
WE\
I/O, DATA IN
High-Z High-Z
ADDRESS
tWC
tCW
CE\
1234567890
1234567890
1234567890
1234567890
1234567890
12345678901234567890
1
234567890123456789
0
1
234567890123456789
0
1
234567890123456789
0
12345678901234567890
123456789012345678901
1
2345678901234567890
1
1
2345678901234567890
1
1
2345678901234567890
1
123456789012345678901
1234567
1234567
1234567
1234567
1234567
123456789012345
1
2345678901234
5
1
2345678901234
5
1
2345678901234
5
123456789012345
12345678901234567
1
234567890123456
7
1
234567890123456
7
1
234567890123456
7
12345678901234567
tAW
Data V alid
tAH
tAS
I/O, DAT A OUT
123456
123456
123456
123456
123456
tWP1
tDH
WE\
I/O, DATA IN
High-Z High-Z
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
Austin Semiconductor, Inc.
WRITE CYCLE NO. 37,12, 14
(WE Controlled)
ADDRESS
tWC
tCW
CE\
123456789
123456789
123456789
123456789
123456789012345678901
1
2345678901234567890
1
1
2345678901234567890
1
123456789012345678901
1234567890123456789012
1
23456789012345678901
2
1
23456789012345678901
2
1234567890123456789012
1234567
1234567
1234567
1234567
1234567890123456
1
23456789012345
6
1
23456789012345
6
1234567890123456
12345678901234567
1
234567890123456
7
1
234567890123456
7
12345678901234567
tAW
Data Valid
tAH
tAS
DATA OUT
123456
123456
123456
123456
Data Undefined
tWP2
tDS tDH
tHZWE tLZWE
WE\
DATA IN
High-Z
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #210 (Package Designator EC)
SMD 5962-95600, Case Outline N
D
E
1234567
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1
23456
7
1234567
Pin 1 identifier area
L2
L
eB
R
D1
1
36
MIN MAX
A 0.080 0.100
A1 0.054 0.066
B 0.022 0.028
D 0.910 0.930
D1 0.840 0.860
E 0.445 0.460
e
L
L2 0.115 0.135
P --- 0.006
R0.009 TYP
SYMBOL
0.100 TYP
SMD SPECIFICATIONS
0.050 BSC
*All measurements are in inches.
A
A1
P
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #307 (Package Designator F)
SMD 5962-95600, Case Outline T
Bottom View
36 1
c
E2
A
Q
MIN MAX
A 0.096 0.125
b 0.015 0.022
c 0.003 0.009
D 0.910 0.930
D1 0.840 0.860
E 0.505 0.515
E2 0.385 0.397
e
L 0.250 0.370
Q 0.020 0.045
SYMBOL
0.050 BSC
SMD SPECIFICATIONS
*All measurements are in inches.
D
e
b
T op View
D1
S
E
L
12345678
1
234567
8
1
234567
8
1
234567
8
1
234567
8
1
234567
8
1
234567
8
12345678
Pin 1 identifier area
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #503 (Package Designator ECJ)
SMD 5962-95600, Case Outline M
*All measurements are in inches.
A
A1
e
b
P
A2
E2
MIN MAX
A 0.140 0.160
A1 0.054 0.075
A2 0.025 0.063
b 0.019 0.028
D 0.910 0.939
D1 0.840 0.860
E 0.434 0.460
E2 0.374 0.410
e
L 0.050 0.070
L2 0.115 0.135
P --- 0.004
SYMBOL SMD SPECIFICATIONS
0.050 BSC
D
E
D1
L2 L
TYP
136
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
*All measurements are in inches.
MECHANICAL DEFINITIONS*
ASI Case #903 (Package Designator DJ)
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
Austin Semiconductor, Inc.
ORDERING INFORMATION
*AVAILABLE PROCESSES
IT = Industrial T emperature Range -40oC to +85oC
XT = Extended T emperature Range -55oC to +125oC
883C = Full Military Processing -55oC to +125oC
**OPTIONS DEFINTIONS
L = 2V Data Retention / Low Power (Consult Factory)
E = Radiation T olerant (EPI)
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SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE
FOR SMD 5962-95600*
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
ASI Part # SMD Part #
A
SI Part # SMD Part #
AS5C512K8EC-12L 5962-9560015QNA AS5C512K8ECJ-12L 5962-9560015QMA
AS5C512K8EC-12L 5962-9560016QNA AS5C512K8ECJ-12L 5962-9560016QMA
AS5C512K8EC-15 5962-9560014QNA AS5C512K8ECJ-15 5962-9560014QMA
AS5C512K8EC-15L 5962-9560013QNA AS5C512K8ECJ-15L 5962-9560013QMA
AS5C512K8EC-20L 5962-9560012QNA AS5C512K8ECJ-20L 5962-9560012QMA
AS5C512K8EC-25L 5962-9560011QNA AS5C512K8ECJ-25L 5962-9560011QMA
AS5C512K8EC-35L 5962-9560010QNA AS5C512K8ECJ-35L 5962-9560010QMA
AS5C512K8EC-45L 5962-9560009QNA AS5C512K8ECJ-45L 5962-9560009QMA
AS5C512K8EC-20 5962-9560004MNA AS5C512K8ECJ-20 5962-9560004MMA
AS5C512K8EC-20L 5962-9560008MNA AS5C512K8ECJ-20L 5962-9560008MMA
AS5C512K8EC-25 5962-9560003MNA AS5C512K8ECJ-25 5962-9560003MMA
AS5C512K8EC-25L 5962-9560007MNA AS5C512K8ECJ-25L 5962-9560007MMA
AS5C512K8EC-35 5962-9560002MNA AS5C512K8ECJ-35 5962-9560002MMA
AS5C512K8EC-35L 5962-9560006MNA AS5C512K8ECJ-35L 5962-9560006MMA
AS5C512K8EC-45 5962-9560001MNA AS5C512K8ECJ-45 5962-9560001MMA
AS5C512K8EC-45L 5962-9560005MNA AS5C512K8ECJ-45L 5962-9560005MMA
ASI Part # SMD Part #
AS5C512K8F-12L 5962-9560015QTA
AS5C512K8F-12L 5962-9560016QTA
AS5C512K8F-15 5962-9560014QTA
AS5C512K8F-15L 5962-9560013QTA
AS5C512K8F-20L 5962-9560012QTA
AS5C512K8F-25L 5962-9560011QTA
AS5C512K8F-35L 5962-9560010QTA
AS5C512K8F-45L 5962-9560009QTA
AS5C512K8F-20 5962-9560004MTA
AS5C512K8F-20L 5962-9560008MTA
AS5C512K8F-25 5962-9560003MTA
AS5C512K8F-25L 5962-9560007MTA
AS5C512K8F-35 5962-9560002MTA
AS5C512K8F-35L 5962-9560006MTA
AS5C512K8F-45 5962-9560001MTA
AS5C512K8F-45L 5962-9560005MTA
ASI Package Designator EC ASI Package Designator ECJ
ASI Package Designator F
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER CROSS REFERENCE
FOR SMD 5962-95613*
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
ASI Part # SMD Part #
A
SI Part # SMD Part #
AS5C512K8EC-12/H 5962-9561329HNA AS5C512K8ECJ-12/H 5962-9561329HZA
AS5C512K8EC-12L/H 5962-9561328HNA AS5C512K8ECJ-12L/H 5962-9561328HZA
AS5C512K8EC-15/H 5962-9561314HNA AS5C512K8ECJ-15/H 5962-9561314HZA
AS5C512K8EC-17/H 5962-9561310HNA AS5C512K8ECJ-17/H 5962-9561310HZA
AS5C512K8EC-17L/H 5962-9561324HNA AS5C512K8ECJ-17L/H 5962-9561324HZA
AS5C512K8EC-20/H 5962-9561309HNA AS5C512K8ECJ-20/H 5962-9561309HZA
AS5C512K8EC-20L/H 5962-9561323HNA AS5C512K8ECJ-20L/H 5962-9561323HZA
AS5C512K8EC-25/H 5962-9561308HNA AS5C512K8ECJ-25/H 5962-9561308HZA
AS5C512K8EC-25/H 5962-9561313HNA AS5C512K8ECJ-25/H 5962-9561313HZA
AS5C512K8EC-25L/H 5962-9561322HNA AS5C512K8ECJ-25L/H 5962-9561322HZA
AS5C512K8EC-25L/H 5962-9561327HNA AS5C512K8ECJ-25L/H 5962-9561327HZA
AS5C512K8EC-35/H 5962-9561307HNA AS5C512K8ECJ-35/H 5962-9561307HZA
AS5C512K8EC-35/H 5962-9561312HNA AS5C512K8ECJ-35/H 5962-9561312HZA
AS5C512K8EC-35L/H 5962-9561321HNA AS5C512K8ECJ-35L/H 5962-9561321HZA
AS5C512K8EC-35L/H 5962-9561326HNA AS5C512K8ECJ-35L/H 5962-9561326HZA
AS5C512K8EC-45/H 5962-9561306HNA AS5C512K8ECJ-45/H 5962-9561306HZA
AS5C512K8EC-45/H 5962-9561311HNA AS5C512K8ECJ-45/H 5962-9561311HZA
AS5C512K8EC-45L/H 5962-9561320HNA AS5C512K8ECJ-45L/H 5962-9561320HZA
AS5C512K8EC-45L/H 5962-9561325HNA AS5C512K8ECJ-45L/H 5962-9561325HZA
AS5C512K8EC-55/H 5962-9561305HNA AS5C512K8ECJ-55/H 5962-9561305HZA
AS5C512K8EC-55L/H 5962-9561319HNA AS5C512K8ECJ-55L/H 5962-9561319HZA
AS5C512K8EC-12/H 5962-9561329HNC AS5C512K8ECJ-12/H 5962-9561329HZC
AS5C512K8EC-12L/H 5962-9561328HNC AS5C512K8ECJ-12L/H 5962-9561328HZC
AS5C512K8EC-15/H 5962-9561314HNC AS5C512K8ECJ-15/H 5962-9561314HZC
AS5C512K8EC-17/H 5962-9561310HNC AS5C512K8ECJ-17/H 5962-9561310HZC
AS5C512K8EC-17L/H 5962-9561324HNC AS5C512K8ECJ-17L/H 5962-9561324HZC
AS5C512K8EC-20/H 5962-9561309HNC AS5C512K8ECJ-20/H 5962-9561309HZC
AS5C512K8EC-20L/H 5962-9561323HNC AS5C512K8ECJ-20L/H 5962-9561323HZC
AS5C512K8EC-25/H 5962-9561308HNC AS5C512K8ECJ-25/H 5962-9561308HZC
AS5C512K8EC-25/H 5962-9561313HNC AS5C512K8ECJ-25/H 5962-9561313HZC
AS5C512K8EC-25L/H 5962-9561322HNC AS5C512K8ECJ-25L/H 5962-9561322HZC
AS5C512K8EC-25L/H 5962-9561327HNC AS5C512K8ECJ-25L/H 5962-9561327HZC
AS5C512K8EC-35/H 5962-9561307HNC AS5C512K8ECJ-35/H 5962-9561307HZC
AS5C512K8EC-35/H 5962-9561312HNC AS5C512K8ECJ-35/H 5962-9561312HZC
AS5C512K8EC-35L/H 5962-9561321HNC AS5C512K8ECJ-35L/H 5962-9561321HZC
AS5C512K8EC-35L/H 5962-9561326HNC AS5C512K8ECJ-35L/H 5962-9561326HZC
AS5C512K8EC-45/H 5962-9561306HNC AS5C512K8ECJ-45/H 5962-9561306HZC
AS5C512K8EC-45/H 5962-9561311HNC AS5C512K8ECJ-45/H 5962-9561311HZC
AS5C512K8EC-45L/H 5962-9561320HNC AS5C512K8ECJ-45L/H 5962-9561320HZC
AS5C512K8EC-45L/H 5962-9561325HNC AS5C512K8ECJ-45L/H 5962-9561325HZC
AS5C512K8EC-55/H 5962-9561305HNC AS5C512K8ECJ-55/H 5962-9561305HZC
AS5C512K8EC-55L/H 5962-9561319HNC AS5C512K8ECJ-55L/H 5962-9561319HZC
ASI Package Designator EC ASI Package Designator ECJ
SRAMSRAM
SRAMSRAM
SRAM
AS5C512K8
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER CROSS REFERENCE
FOR SMD 5962-95613*
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
ASI Part # SMD Part #
AS5C512K8F-12/H 5962-9561329HUA
AS5C512K8F-12L/H 5962-9561328HUA
AS5C512K8F-15/H 5962-9561314HUA
AS5C512K8F-17/H 5962-9561310HUA
AS5C512K8F-17L/H 5962-9561324HUA
AS5C512K8F-20/H 5962-9561309HUA
AS5C512K8F-20L/H 5962-9561323HUA
AS5C512K8F-25/H 5962-9561308HUA
AS5C512K8F-25/H 5962-9561313HUA
AS5C512K8F-25L/H 5962-9561322HUA
AS5C512K8F-25L/H 5962-9561327HUA
AS5C512K8F-35/H 5962-9561307HUA
AS5C512K8F-35/H 5962-9561312HUA
AS5C512K8F-35L/H 5962-9561321HUA
AS5C512K8F-35L/H 5962-9561326HUA
AS5C512K8F-45/H 5962-9561306HUA
AS5C512K8F-45/H 5962-9561311HUA
AS5C512K8F-55/H 5962-9561305HUA
AS5C512K8F-55L/H 5962-9561319HUA
AS5C512K8F-45L/H 5962-9561320HUA
AS5C512K8F-45L/H 5962-9561325HUA
AS5C512K8F-12/H 5962-9561329HUC
AS5C512K8F-12L/H 5962-9561328HUC
AS5C512K8F-15/H 5962-9561314HUC
AS5C512K8F-17/H 5962-9561310HUC
AS5C512K8F-17L/H 5962-9561324HUC
AS5C512K8F-20/H 5962-9561309HUC
AS5C512K8F-20L/H 5962-9561323HUC
AS5C512K8F-25/H 5962-9561308HUC
AS5C512K8F-25/H 5962-9561313HUC
AS5C512K8F-25L/H 5962-9561322HUC
AS5C512K8F-25L/H 5962-9561327HUC
AS5C512K8F-35/H 5962-9561307HUC
AS5C512K8F-35/H 5962-9561312HUC
AS5C512K8F-35L/H 5962-9561321HUC
AS5C512K8F-35L/H 5962-9561326HUC
AS5C512K8F-45/H 5962-9561306HUC
AS5C512K8F-45/H 5962-9561311HUC
AS5C512K8F-55/H 5962-9561305HUC
AS5C512K8F-55L/H 5962-9561319HUC
AS5C512K8F-45L/H 5962-9561320HUC
AS5C512K8F-45L/H 5962-9561325HUC
ASI Package Designator F