Individual Specification AN48830B 0.225 Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity 2 3 0.800.10 0.11+0.10 -0.05 0.65 0.65 1.300.10 2.000.10 0.320.10 0 to 0.10 Features 0.10 1 Either North nor South magnetic pole can be selected * High sensitivity (6 mT max.) due to offset cancel circuit and a new 2 5 sample and hold circuit Small current by using intermittent action Seating plane 3 4 SMINI-5DA (Lead-free package) S (Average supply current: 3.5 A typ.) Small package (SMD) CMOS inverter output (output form logic) Note) *: Applications AN48830B output Magnetic flux density N Flip type cellular phone, digital video camera H L Conventional model H output L Block Diagram VCC N.C. N.C. 4 3 1 CLK On/Off control 5 Out Amplifier Hall element GND Switch Sample and hold 2 Pin Descriptions 32 Unit : mm 4 1 0.225 The AN48830B is a Hall IC (a magnetic sensor) which has 2 times or more sensitivity and a low current consumption of about one threehundredth compared with our conventional one. In this Hall IC, a Hall element, a offset cancel circuit, an amplifier circuit, a sample and hold circuit, a Schmidt circuit, and output stage FET are integrated on a single chip housed in a small package by IC technique. 5 0.13 M 1.650.10 2.100.10 Overview 0.22+0.10 -0.05 Pin No. Symbol Description Pin No. Symbol 1 N.C. 4 VCC Power supply 2 GND 5 Out Output 3 N.C. Ground Description AN48830B Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage VCC 5 V Output voltage VOUT 5 V Supply current ICC 5 mA IOUT 15 mA PD 60 mW Topr -25 to +75 C Tstg -55 to +125 C Output current Power dissipation *1, *2 Operating ambient temperature Storage temperature *1 *1 Note) *1: Except for the power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25C. *2: Ta = 75C. For the independent IC without a heat sink. Please use within the range of power dissipation, refering to PD Ta curve. Recommended Operating Range Parameter Supply voltage Symbol Range Unit VCC 2.5 to 3.5 V Electrical Characteristics Ta = 25C 2C Parameter Symbol Operating magnetic flux density 1 BH-LS Operating magnetic flux density 2 *1 Min Typ Max Unit VCC = 3 V 6 mT BH-LN VCC = 3 V -6 mT Operating magnetic flux density 3 *2 BL-HS VCC = 3 V 0.5 mT Operating magnetic flux density 4 *2 BL-HN VCC = 3 V - 0.5 mT Output voltage 1 VOLS VCC = 3 V, IO = 2 mA, B = 6.0 mT 0.1 0.3 V Output voltage 2 VOLN VCC = 3 V, IO = 2 mA, B = -6.0 mT 0.1 0.3 V Output voltage 3 VOHS VCC = 3 V, IO = -2 mA, B = 0.5 mT 2.7 2.9 V VOHN VCC = 3 V, IO = -2 mA, B = - 0.5 mT 2.7 2.9 V ICCAVE VCC = 3 V 3.5 7.0 A Output voltage 4 Supply current 1 *3 Conditions Note) *1: Symbol BH-LS , BH-LN stands for the operating magnetic flux density where its output level varies from high to low. *2: Symbol BL-HS , BL-HN stands for the operating magnetic flux density where its output level varies from low to high. *3: ICCAVE = {ICCON x tON + ICCOFF x tOFF}/{tON + tOFF} Design reference data Parameter Symbol Conditions Min Typ Max Unit Hysteresis width 1 BWS VCC = 3 V 1.2 mT Hysteresis width 2 BWN VCC = 3 V 1.2 mT Supply current 2 ICCON VCC = 3 V 1.4 mA Supply current 3 ICCOFF VCC = 3 V 2 A Operating time tON VCC = 3 V 20 s Stop time tOFF VCC = 3 V 20.5 ms Note) It will operate normally in approximately 41 ms after power on. 33 Individual Specification Technical Data Position of a Hall element (unit in mm) Distance from a package surface to sensor part: 0.39 mm (reference value) A Hall element is placed on the shaded part in the figure. 1.0 0.31 1.0 Magneto-electro conversion characteristics S Output voltage BL-HN BL-HS BWN BWS BH-LN BH-LS N Applied magnetic flux density B Operating magnetic flux density Direction of applied magnetic field Power dissipation of package MINI-5DA AN48830B_PD-Ta PD Ta 200 175 Power dissipation PD (mW) 150 Independent IC without a heat sink Rth(j-a) = 833.3C/W PD = 120 mW (25C) 125 100 75 50 25 0 0 25 50 75 100 Ambient temperature Ta (C) 34 125 150 AN48830B Technical Data (continued) Main characterisitcs AN48830B_Tokusei02 AN48830B_Tokusei03 Operating magnetic flux density Ambient temperature Operating magnetic flux density Supply voltage 8.0 6.0 Operating magnetic flux density B (mT) Sample 1 BH-LS 4.0 Operating magnetic flux density B (mT) Sample 2 BH-LS Sample 2 BL-HS Sample 1 BL-HS 2.0 0 Sample 1 BH-LN -2.0 Sample 2 BH-LN Sample 1 BL-HN Sample 2 BL-HN -4.0 6.0 4.0 1 0 Sample 1 BL-HN Sample 2 BL-HN -2.0 Sample 1 BH-LN -4.0 Sample 2 BH-LN VCC = 3 V 2 4 3 5 -6.0 -50 6 0 25 50 75 100 125 AN48830B_Tokusei05 Supply current Supply voltage 2.00 10 Ta = 25C Output = High 1.80 8 Supply current ICC (A) Sample 1 BWN Hesteresis width BW (mT) -25 Ambient temperature Ta (C) Supply voltage VCC (V) AN48830B_Tokusei04 Hysteresis width Supply voltage Sample 2 BWN 1.60 Sample 2 BWS 1.40 Sample 1 BWS 1.20 6 4 -50C 25C 2 1.00 0.80 Sample 2 BL-HS Sample 1 BL-HS 2.0 Ta = 25C -6.0 Sample 2 BH-LS Sample 1 BH-LS 1 2 4 3 5 0 6 125C 1 2 Supply voltage VCC (V) 3 4 5 6 Supply voltage VCC (V) AN48830B_Tokusei06 AN48830B_Tokusei07 Low-level output voltage Supply voltage high-level output voltage Supply voltage 70 0.035 IO = 2 mA IO = -2 mA hgh-level output voltage VOH (V) Low-level output voltage VOL (V) 0.03 125C 0.025 25C 0.02 -50C 0.015 0.01 60 125C 50 25C -50C 40 30 0.005 0.00 1 2 3 4 Supply voltage VCC (V) 5 6 20 1 2 3 4 5 6 Supply voltage VCC (V) 35