Individual Specification
32
AN48830B
Low current consumption, high sensitivity CMOS Hall IC
Operate by the value of magnetic flux
density, regardless of polarity
■ Overview
The AN48830B is a Hall IC (a magnetic sensor) which has 2 times
or more sensitivity and a low current consumption of about one three-
hundredth compared with our conventional one.
In this Hall IC, a Hall element, a offset cancel circuit, an amplifier
circuit, a sample and hold circuit, a Schmidt circuit, and output stage
FET are integrated on a single chip housed in a small package by IC
technique.
■ Features
Either North nor South magnetic pole can be selected *
High sensitivity (6 mT max.) due to offset cancel circuit and a new
sample and hold circuit
Small current by using intermittent action
(Average supply current: 3.5 µA typ.)
Small package (SMD)
CMOS inverter output (output form logic)
■ Applications
Flip type cellular phone, digital video camera
■ Block Diagram
CLK
4
2
GND
5
Out
VCC
3 1
N.C. N.C.
On/Off control
Sample
and
hold
Hall
element
Amplifier
Switch
■ Pin Descriptions
Pin No. Symbol Description Pin No. Symbol Description
1N.C. 4VCC Power supply
2GND Ground 5Out Output
3N.C.
Unit : mm
SMINI-5DA (Lead-free package)
4
3
5
1 2
3
4
21
5
0.225
0.225
2.10±0.10
1.65±0.10
1.30±0.10
Seating plane
0.80±0.10
0 to 0.10
0.32
±
0.10
2.00±0.10
0.22+0.10
−0.05
0.11+0.10
−0.05
0.65 0.65
M
0.13
0.10
S
N
H
L
H
L
Magnetic
flux density
N
ote) *:
AN48830B
output
Conventional model
output
AN48830B
33
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply voltage VCC 5V
Output voltage VOUT 5V
Supply current ICC 5mA
Output current IOUT 15 mA
Power dissipation *1, *2PD60 mW
Operating ambient temperature *1Topr −25 to +75 °C
Storage temperature *1Tstg −55 to +125 °C
Note) *1: Except for the power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: Ta = 75°C. For the independent IC without a heat sink. Please use within the range of power dissipation, refering to PD Ta curve.
■ Recommended Operating Range
Parameter Symbol Range Unit
Supply voltage VCC 2.5 to 3.5V
■ Electrical Characteristics Ta = 25°C ± 2°C
Parameter Symbol Conditions Min Typ Max Unit
Operating magnetic flux density 1BH-LS VCC = 3 V 6mT
Operating magnetic flux density 2
*1BH-LN VCC = 3 V −6 mT
Operating magnetic flux density 3
*2BL-HS VCC = 3 V 0.5 mT
Operating magnetic flux density 4
*2BL-HN VCC = 3 V − 0.5mT
Output voltage 1VOLS VCC = 3 V, IO = 2 mA, B = 6.0 mT 0.1 0.3V
Output voltage 2VOLN VCC = 3 V, IO = 2 mA, B = −6.0 mT 0.1 0.3V
Output voltage 3VOHS VCC = 3 V, IO = −2 mA, B = 0.5 mT 2.7 2.9V
Output voltage 4VOHN VCC = 3 V, IO = −2 mA, B = − 0.5 mT 2.7 2.9V
Supply current 1 *3ICCAVE VCC = 3 V 3.5 7.0µA
Note) *1: Symbol BH-LS , BH-LN stands for the operating magnetic flux density where its output level varies from high to low.
*2: Symbol BL-HS , BL-HN stands for the operating magnetic flux density where its output level varies from low to high.
*3: ICCAVE = {ICCON × tON + ICCOFF × tOFF}/{tON + tOFF}
Design reference data
Parameter Symbol Conditions Min Typ Max Unit
Hysteresis width 1BWS VCC = 3 V 1.2mT
Hysteresis width 2BWN VCC = 3 V 1.2mT
Supply current 2ICCON VCC = 3 V 1.4mA
Supply current 3ICCOFF VCC = 3 V 2 µA
Operating time tON VCC = 3 V 20 µs
Stop time tOFF VCC = 3 V 20.5ms
Note) It will operate normally in approximately 41 ms after power on.
Individual Specification
34
■ Technical Data
Position of a Hall element (unit in mm)
Distance from a package surface to sensor part: 0.39 mm (reference value)
A Hall element is placed on the shaded part in the figure.
0.31
1.0
1.0
Magneto-electro conversion characteristics
BWSBWN
BH-LS
BH-LN
BL-HS
BL-HN
S
N
Direction of applied magnetic field Operating magnetic flux density
Output voltage
Applied magnetic flux density B
Power dissipation of package MINI-5DA
PD Ta
200
0 25 15050 75 100 125
0
25
50
75
100
125
150
175
AN48830B_PD-Ta
Ambient temperature Ta (°C)
Power dissipation PD (mW)
Independent IC
without a heat sink
Rth(j-a) = 833.3°C/W
PD = 120 mW (25°C)
AN48830B
35
■ Technical Data (continued)
Main characterisitcs
Operating magnetic flux density Supply voltage
Operating magnetic flux density
Ambient temperature
−6.0
−4.0
2.0
0
−2.0
4.0
6.0
1 3 42 5 6
AN48830B_Tokusei02
Supply voltage VCC (V)
Operating magnetic flux density B (mT)
Ta = 25°C
Sample 1 BH-LS
Sample 2 BH-LS
Sample 1 BL-HS
Sample 2 BL-HS
Sample 1 BH-LN
Sample 2 BH-LN
Sample 1 BL-HN
Sample 2 BL-HN
5
Hysteresis width Supply voltage Supply current Supply voltage
1.40
1.20
1.00
0.80
1.60
2.00
1.80
1 3 42 5 6
Hesteresis width BW (mT)
AN48830B_Tokusei04
Supply voltage VCC (V)
Ta = 25°C
Sample 1 BWS
Sample 2 BWS
Sample 1 BWN
Sample 2 BWN
0
2
4
6
8
10
2 41 3 5
6
AN48830B_Tokusei05
Supply voltage VCC (V)
Supply current ICC (µA)
Output = High
−50°C
125°C
25°C
Low-level output voltage Supply voltage ∆
high-level output voltage
Supply voltage
0.00
0.02
0.01
0.025
0.015
0.005
0.03
0.035
AN48830B_Tokusei06
2 41 3 5 6
Supply voltage VCC (V)
Low-level output voltage VOL (V)
IO = 2 mA
125
°C
25°C
−50°C
20
40
50
30
60
70
AN48830B_Tokusei07
2 41 3 5
6
∆ hgh-level output voltage ∆VOH (V)
Supply voltage VCC (V)
125°C
25°C
−50°C
I
O = −2 mA