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CZRW5221B-G thru CZRW5259B-G
Surface Mount Zener Diodes
ā-Gā suffix designated RoHS compliant version
Maximum Ratings and Electrial Characterics
(TA=25 unless otherwise noted) VF=1.2V, IF=100mA for all types
I
ZM
@ T
A
Nom. V Min. V Max. V Ohm mA Ohm mA nA V mA
CZRW5221B-G 2.4 2.28 2.52 30 20 1200 0.25 100 1 188
CZRW5222B-G 2.5 2.38 2.63 30 20 1250 0.25 100 1 180
CZRW5223B-G 2.7 2.57 2.84 30 20 1300 0.25 75 1 167
CZRW5225B-G 3 2.85 3.15 30 20 1600 0.25 50 1 150
CZRW5226B-G 3.3 3.14 3.47 28 20 1600 0.25 25 1 138
CZRW5227B-G 3.6 3.42 3.78 24 20 1700 0.25 15 1 126
CZRW5228B-G 3.9 3.71 4.1 23 20 1900 0.25 10 1 115
CZRW5229B-G 4.3 4.09 4.52 22 20 2000 0.25 5 1 106
CZRW5230B-G 4.7 4.47 4.94 19 20 1900 0.25 5 2 97
CZRW5231B-G 5.1 4.85 5.36 17 20 1600 0.25 5 2 89
CZRW5232B-G 5.6 5.32 5.88 11 20 1600 0.25 5 3 81
CZRW5234B-G 6.2 5.89 6.51 7 20 1000 0.25 5 4 73
CZRW5235B-G 6.8 6.46 7.14 5 20 750 0.25 3 5 67
CZRW5236B-G 7.5 7.13 7.88 6 20 500 0.25 3 6 61
CZRW5237B-G
CZRW5238B-G
8.2 7.79 8.61 8 20 500 0.25 3 6 58
8.7 8.27 9.14 8 20 500 0.25 55
CZRW5239B-G 9.1 8.65 9.56 10 20 600 0.25 3
3
6.5
6.5
50
CZRW5240B-G 10 9.5 10.5 17 20 600 0.25 3 8 45
CZRW5241B-G 11 10.45 11.55 22 20 600 0.25 3 8.4 41
CZRW5242B-G 12 11.4 12.6 30 2 0 600 0.25 2 9.1 3 8
CZRW5243B-G 13 12.35 13.65 13 9.5 600 0.25 1 9.9 35
CZRW5245B-G 15 14.25 15.75 16 8.5 600 0.25 0.5 11 30
CZRW5246B-G 16 15.2 16.8 17 7.8 600 0.25 0.1 12 28
CZRW5248B-G 18 17.1 18.9 21 7 600 0.25 0.1 14 25
CZRW5250B-G 20 19 21 25 6.2 600 0.25 0.1 15 23
CZRW5251B-G 22 20.9 23.1 29 5.6 600 0.25 0.1 17 21
CZRW5252B-G 24 22.8 25.2 33 5.2 600 0.25 0.1 18 19.1
CZRW5254B-G 27 25.65 28.35 41 5 600 0.25 0.1 21 16.8
CZRW5255B-G 28 26.6 29.4 44 4.5 600 0.25 0.1 21 16.2
CZRW5256B-G 30 28.5 31.5 49 4.2 600 0.25 0.1 23 15.1
CZRW5257B-G 33 31.35 34.65 58 3.8 700 0.25 0.1 25 13.8
CZRW5258B-G 36 34.2 37.8 70 3.4 700 0.25 0.1 27 12.6
CZRW5259B-G 39 37.05 40.95 80 3.2 800 0.25 0.1 30 11.6
Max Reverse
Leakage Current Zener
Current
500 mWatts Zener Diodes
V
Z
@ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
Max. Zener ImpedanceNominal Zener Voltage
Part Number
I
R
@ V
R
NOTE:
1. Tolerance and T ype Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of Ā±5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener V oltage (V
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30
O
C, from the diode body .
4. Zener Impedance (Z
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5. Surge Current (I
R
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration; however, actual device capability is as described in Figure 5.
NOTE:
1. Tolerance and T ype Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of Ā±5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener V oltage (V
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30
O
C, from the diode body .
4. Zener Impedance (Z
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5. Surge Current (I
R
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration; however, actual device capability is as described in Figure 5.