MMBT4401-7 - Diodes - Datasheet.Directory

MMBT4401

Document Number: DS30039 Rev. 14 - 2 1 of 6

www.diodes.com September 2011

MMBT4401

40V NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBT4403)

• Ideal for Medium Power Amplification and Switching

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• UL Flammability Rating 94V-0

• Case material: molded Plastic “Green” Compound

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.008 grams (Approximate)

Ordering Information (Note 3 & 4)

Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel

MMBT4401-7-F Commercial K2X 7 8 3,000

MMBT4401-13-F Commercial K2X 13 8 10,000

MMBT4401Q-13-F Automotive K2X 13 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For more packaging details, go to our website at http://www.diodes.com.

4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

SOT23

Device Symbol Top View

Pin-Out

C

B

E

K2X

YM

K2X = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

MMBT4401

Document Number: DS30039 Rev. 14 - 2 2 of 6

www.diodes.com September 2011

MMBT4401

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 60 V

Collector-Emitter Voltage VCEO 40 V

Emitter-Base Voltage VEBO 6.0 V

Collector Current - Continuous (Note 5) IC 600 mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 5) PD 300 mW

Thermal Resistance, Junction to Ambient (Note 5) RθJA 417 °C/W

Thermal Resistance, Junction to Lead (Note 6) RθJL 350 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air conditions; the

device is measured when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

Typical Thermal Characteristics

0

50

100

25 50 75 100 125 150 175 200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

T , AMBIENT TEMPERA TURE (°C)

Fi g. 1 Power Di ssipa t i on vs . Ambient Temp er at ure

A

150

200

250

300

350

0

400

R = 417 C/W

θ

JA

°

Note 5

0.1 1 10 100

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Vo lt age

0.001

0.01

0.1

1

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

T = 25°C

A

Single Non-repetitive Pulse

DC

Pw = 100ms

Pw = 10ms

MMBT4401

Document Number: DS30039 Rev. 14 - 2 3 of 6

www.diodes.com September 2011

MMBT4401

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage BVCBO 60 ⎯ V IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage BVCEO 40 ⎯ V IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage BVEBO 6.0 ⎯ V IE = 100μA, IC = 0

Collector Cutoff Current ICEX ⎯ 100 nA

VCE = 35V, VEB

(

OFF

)

= 0.4V

Base Cutoff Current IBL ⎯ 100 nA

VCE = 35V, VEB

(

OFF

)

= 0.4V

ON CHARACTERISTICS (Note 7)

DC Current Gain hFE

20

40

80

100

40

⎯

300

⎯

IC = 100µA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

IC = 150mA, VCE = 1.0V

IC = 500mA, VCE = 2.0V

Collector-Emitter Saturation Voltage VCE(sat) ⎯ 0.40

0.75 V IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

Base-Emitter Saturation Voltage VBE(sat) 0.75

⎯ 0.95

1.2 V IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Ccb ⎯ 6.5 pF

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance Ceb ⎯ 30 pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Input Impedance hie 1.0 15 kΩ VCE = 10V, IC = 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio hre 0.1 8.0 x 10-4

Small Signal Current Gain hfe 40 500 ⎯

Output Admittance hoe 1.0 30 μS

Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = 10V, IC = 20mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time td ⎯ 15 ns

VCC = 30V, IC = 150mA,

VBE(off) = 2.0V, IB1 = 15mA Rise Time t

r

⎯ 20 ns

Storage Time ts ⎯ 225 ns

VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA Fall Time tf ⎯ 30 ns

Notes: 7. Short duration pulse test used to minimize self-heating effect.

Typical Electrical Characteristics

0.1 1 10 100

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 3 Typical Collector Current

vs. Collec tor -Emi tter Voltage

0.001

0.01

0.1

1

I,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(A )

C

T = 25°C

A

Single Non-re petitive Pulse

DUT mounted onto 1xMRP

FR-4 board

DC

Pw = 100ms

Pw = 10ms

1

10

1,000

100

0.1 110 1,000

100

h, D

C

U

R

EN

T

G

AIN

FE

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical DC Current Gain vs. Collector Current

C

T = -25°C

A

T = +25°C

A

T = 125°C

A

V = 1.0V

CE

MMBT4401

Document Number: DS30039 Rev. 14 - 2 4 of 6

www.diodes.com September 2011

MMBT4401

Typical Electrical Characteristics – Continued

110 100 1,000

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURA TION VOL TAGE (V)

CE(SAT)

I , COLLECTOR CURRENT (mA)

Fig. 5 Collector-Emitter Saturation Voltage

vs. Col lecto r Cu r re nt

C

T = 25°C

A

T = -50°C

A

T = 150°C

A

0

0.1

0.2

0.3

0.4

0.

5

I

C

B

= 10

10.1 10 100

V , BASE -EM I

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E (V)

BE(ON)

I , COLLECTOR CURRENT (mA)

Fig . 6 Typi cal Base-Emi tter T urn- O n V olt age

vs. Collector Current

C

0.2

0.3

0.4

0.6

0.5

0.8

0.7

1.0

0.9

V = 5V

CE

T = 25°C

A

T = -50°C

A

T = 150°C

A

1

5

20

30

10

0.1 101.0 50

C

A

P

A

C

I

T

A

N

C

E (p

F

)

V , REVERSE VOL TAGE (V)

Fig. 7 Typical Capacitance Characteristics

R

C

obo

100

C

ibo

1

10

100

1,000

110100

I , COLLECTOR CURRENT (mA)

Fig . 8 Ty pi cal Gain Bandwid t h Product vs. C ollect or C ur r ent

C

f,

G

AI

N

BA

N

DWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

V = 5V

CE

0.001 0.01 110

0.1 100

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I , BASE CURRENT (mA)

Fig. 9 Typical Collector Saturation Region

B

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

V

O

L

T

A

G

E (V)

CE

I = 1mA

C

I = 10mA

C

I = 30mA

C

I = 100mA

C

I = 300mA

C

MMBT4401

Document Number: DS30039 Rev. 14 - 2 5 of 6

www.diodes.com September 2011

MMBT4401

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

A

M

JL

D

F

BC

H

K

G

K1

XE

Y

C

Z

MMBT4401

Document Number: DS30039 Rev. 14 - 2 6 of 6

www.diodes.com September 2011

MMBT4401

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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