MMBT4401 40V NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data * * * * * * * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 UL Flammability Rating 94V-0 Case material: molded Plastic "Green" Compound Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.008 grams (Approximate) C SOT23 B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 3 & 4) Product Grade Marking MMBT4401-7-F MMBT4401-13-F MMBT4401Q-13-F Commercial Commercial Automotive K2X K2X K2X Notes: Reel size (inches) Tape width (mm) 7 13 13 Quantity per reel 8 8 8 3,000 10,000 10,000 1. No purposefully added lead. 2. Diodes Inc.s "Green" Policy can be found on our website at http://www.diodes.com 3. For more packaging details, go to our website at http://www.diodes.com. 4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified. Marking Information Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 MMBT4401 Document Number: DS30039 Rev. 14 - 2 K2X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) YM K2X 2012 Z Mar 3 Apr 4 2013 A May 5 Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 2015 C 2016 D 2017 E Aug Sep Oct Nov Dec 8 9 O N D September 2011 (c) Diodes Incorporated MMBT4401 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 5) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 600 Unit V V V mA Value 300 417 350 -55 to +150 Unit mW C/W C/W C Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: Symbol PD RJA RJL TJ, TSTG (Note 5) (Note 5) (Note 6) 5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). Typical Thermal Characteristics 1 400 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 350 300 250 Note 5 200 150 100 0.1 0 0.01 T A = 25C Single Non-repetitive Pulse 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 25 MMBT4401 Document Number: DS30039 Rev. 14 - 2 Pw = 100ms Pw = 10ms RJA = 417C/W 50 0 DC 0.001 0.1 2 of 6 www.diodes.com 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage September 2011 (c) Diodes Incorporated MMBT4401 Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 7) Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX IBL 60 40 6.0 100 100 V V V nA nA hFE 20 40 80 100 40 300 Collector-Emitter Saturation Voltage VCE(sat) 0.40 0.75 V Base-Emitter Saturation Voltage VBE(sat) 0.75 0.95 1.2 V Ccb Ceb hie hre hfe hoe 1.0 0.1 40 1.0 6.5 30 15 8.0 500 30 pF pF k -4 x 10 S Current Gain-Bandwidth Product fT 250 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf 15 20 225 30 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Notes: Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 7. Short duration pulse test used to minimize self-heating effect. Typical Electrical Characteristics 1,000 T A = 125C Pw = 10ms hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 1 0.1 DC Pw = 100ms 0.01 100 TA = 25C Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board 0.001 0.1 MMBT4401 T A = +25C 10 VCE = 1.0V 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage Document Number: DS30039 Rev. 14 - 2 T A = -25C 3 of 6 www.diodes.com 1 0.1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current September 2011 (c) Diodes Incorporated MMBT4401 Typical Electrical Characteristics - Continued VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25C 0.3 T A = 150C 0.2 0.1 TA = -50C 0 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector-Emitter Saturation Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 30 CAPACITANCE (pF) VCE = 5V 0.9 T A = -50C 0.8 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 100 VCE = 5V 100 20 Cibo 10 5 Cobo 1 0.1 1.0 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.5 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 50 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain Bandwidth Product vs. Collector Current VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 1 IB, BASE CURRENT (mA) Fig. 9 Typical Collector Saturation Region 0.01 MMBT4401 Document Number: DS30039 Rev. 14 - 2 100 4 of 6 www.diodes.com September 2011 (c) Diodes Incorporated MMBT4401 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X MMBT4401 Document Number: DS30039 Rev. 14 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 5 of 6 www.diodes.com September 2011 (c) Diodes Incorporated MMBT4401 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2011, Diodes Incorporated www.diodes.com MMBT4401 Document Number: DS30039 Rev. 14 - 2 6 of 6 www.diodes.com September 2011 (c) Diodes Incorporated