TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices Qualified Level
2N2484
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N2484 Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 50 mAdc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 360
1.2 mW
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 146 0C/W
1) Derate linearly 2.06 mW/0C above TA = +250C
2) Derate linearly 6.85 mW/0C above TC = +250C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc V(BR)CEO 60 Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc ICES 5.0 ηAdc
Collector-Base Cutoff Current
VCB = 45 Vdc
VCB = 60 Vdc ICBO 5.0
10 ηAdc
µAdc
Collector-Emitter Cutoff Current
VCE = 5.0 Vdc ICEO 2.0 ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 6.0 Vdc IEBO 2.0
10 ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2484 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 µAdc, VCE = 5.0 Vdc
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
hFE
45
200
225
250
250
225
500
675
800
800
800
Collector-Emitter Saturation Voltage
IC = 1.0 mAdc, IB = 100 µAdc VCE(sat) 0.3 Vdc
Base-Emitter Voltage
VCE = 5.0 Vdc, IC = 100 µAdc VBE 0.5 0.7 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 50 µAdc, VCE = 5.0 Vdc, f = 5.0 MHz
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz hfe
3.0
2.0
7.0
Open Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hoe 40 µmhos
Open Circuit Reverse-Voltage Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hre
8.0x10
-4
Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hie 3.5 24 kΩ
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hfe 250 900
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 5.0 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 6.0 pF
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
