Standard Power MOSFETs 2N6757, 2N6758 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8A and 9A, 150V - 200V ros(on) = 0.40 and 0.6Q Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics High input impedance @ Majority carrier device The 2N6757 and 2N6758 are n-channel enhancement- mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. These types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings Vv Drain Source Voltage Grain - Gate Voltage = 20 KN) Gate Source Voltage Storage Temperatura Range 3-476 File Number 1587 N-CHANNEL ENHANCEMENT MODE $s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION ORAIN SOURCE (FLANGE } GATE 32CS- 37801 JEDEC TO-204AA 2N6757 150 150 8.0* 5.0 420 75 (See Fig. 11) 30 11) tt ~65 to 150 Standard Power MOSFETs 2N6757, 2N6758 Electrical Characteristics (2 Tc = 25C (Unless Otherwise Specified) Parameter Type Min. | Tye. Max Units Vest Conditions BVpss _Orain Source Breakdown Voltage | 2N6757 | 150 - - Vo} gs 70 2N6758 200 - - v Ip = 1.0 ma Vesith) Gate Threshold Voltage ALL 2.0 - 4.0 Vv | Vps~= Ves. '!p = 1 mA Igssr Gate Body Leakage Forward ALL = = 1o- [ nA | Vgg = 20v igssnh Gate ~ Body Leakage Reverse ALL - = voor | na | Vgs= -20V ipss Zaro Gate Voltage Drain Current ALL - ot 1.0 mA Vos = Max. Rating, Vgg = 0 = 0.2 | 40 | mA | Vog = Max. Rating, Vgg = 0, Tc = 125C Voston) vane ee On-tate 2ne7s7 | - - 48 Vv [Yas 7 10. Ip = 84 2N6758 - - 36 v Veg = 10V, 15 = 94 Rpston) Static Drain-Source On-State 2NG6757 - 04 o.6* 2 Vas = 10V. Ip = 5A Resistance ONGTEO = 0.25 04 a2 Vas = 10V. Ip = 6A Apsion} Static Drain-Source On-State 2Ne757 | = 113 | @ | Vgg = 10V, 1p = BA, Te = 125C Resistance (1) 2NG758 - - 0.75* a Vag = 10V, Ip = 6A, Te = 125C GS o c 5 Forward Transconductance (j) ALL 3.0 5.0 gor | Siu) | Vog= 15, 1p = 6A G, Input Capacitance ALL 350 600 00 pF 7 Vgs = 9. Vpg = 25V, f= 1.0 MHz Cos Output Capacitance ALL 100 250 450 oF See Fig. 10 Cras Reverse Transfer Capacitance ALL 40 80 150 pF tg fon) Turn-On Delay Time ALL = = 30 as | Vop =90V, Ip = GA, Z, = 152 % Rise Time ALL ~ = 60 ns | (See Figs. 13 and 14) {g (oft) Turn-Off Delay Time ALL - ~ 50 as {MOSFET switching times are essentially te Fail Time ALL. - - 40 ns independent of operating temperature.) Thermal Resistance Amsc Junction-to-Case ALL. - - 1.67" | C/W Rencs _-Case-to-Sink ALL - O.1 - C/W } Mounting turface flat, smooth, and greased. Ring dunction-to-Ambient ALL - - 30 C/W | Free Air Cperation (Body = (Sody Diode 2N6757 2N6758 Reverse Recovery Time * JEOEC registered values. VARY ty TO OBTAIN REQUIRED PEAK |, vi Ds ouT & Ves * 20V f-tp La Fig. 1 Clamped Inductive Test Circuit 90 us PULSE Ig, ORAIN CURRENT (AMPERES) 0 20 a 60 80 Vps. DRAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 3 Typical Output Characteristics 0.80 Body-Drain Diode Ratings and Characteristics E| = 0.58Vpsg Vg = 5.758Vgs5 -m.Ve 0.0502 + = 8.0 Pulse Test: Pulse Width < 300 wsec, Duty Cycle < 2% (p. GRAIN CURRENT {AMPERES} showing the integral reverse P-N junction rectifier. = BA, =O Ig = 9A, Vgg = 0 le = Igng, dig /dt = 100 A/us Vp = dig/at = roo Fig. 2 ~ Clamped inductive Waveforms a0 ws PULSE Vps = 18 1 2 3 4 5 ? Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Typical Transfer Characteristics 3-477 Standard Power MOSFETs 2N6757, 2N6758 a a 2 = 2 = = 6 = 6 . . & = = = Zz, a, i 5 a So 3 cS) 2 2 0 1 2 3 a 5 0 1 2 3 4 5 Vag. ORAIN-TC-SOURCE VOLTAGE (VOLTS? Ves. ORAIN-TO-SOUACE VOLTAGE {VOLTS} Fig. 5 Typical Saturation Characteristics Fig. 6 Typical Saturation Characteristics (2N6757) (2N6758) Fd nw eo Ip. DRAIN CURRENT (AMPERES) & 5 ts. TRAWSCONDUCTANCE (SIEMENS) : a Ty = 18090 MAX. SINGLE PULSE 02 0 2 6 8 10 5.0 10 20 50 100 200 500 1p, ORAIN CURRENT (AIMPERES) Vos: DAAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. ? Typical Transconductaney Vs. Drain Current Fig. 8 Maximum Safe Operating Area Rasion) DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) C, CAPACITANCE (pF) -40 6 40 80 120 160 o 10 20 x a so Ty, JUNCTION TEMPERATURE {C} Vas, DRAIN-TD-SOURCE VOLTAGE (VOLTS) Fig.9Normalized Typical On-Resi Vs. Temps Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 3-478 Standard Power MOSFETs Pp, POWER DISSIPATION (WATTS) Qa 2 0 60 80 100 1200-140 Tc, CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve 9 Von = 90 2 1550 PRE = 1 kHz Vo TO SCOPE tpt ius vi Fig. 13 Switching Time Tast Circuit 2N6757, 2N6758 2N6758 m Ig, SOURCE CURRENT {AMPERES} s Q 1 2 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage p PULSE WIDTH VGS (ont a erent 40% 90% INPUT, Vj 50%, 50% 10% Ves | {d ton) Er ta Cott} m4 Uo] ty V05 (off) om 10% J's OUTPUT. Vo Ne Y 90% VDS (on) ton| la off - Fig. 14 Switching Time Waveforms 10% INPUT PULSE INPUT PULSE " RISE TIME ~ FALL TIME 3-479