UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-004,B
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
TO-92
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector dissipation Pc 400 mW
Collector current Ic -150 mA
Base current IB -50 mA
Junction Temperature Tj 125 °C
Storage Temperature TSTG -65 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -50 V
Collector-emitter breakdown voltage BVCEO Ic=-10mA,IB=0 -50 V
Emitter-base breakdown voltage BVEBO I
E=-10µA,Ic=0 -5 V
Collector cut-off current ICBO V
CB=-50V,IE=0 -100 nA
Emitter cut-off current IEBO V
EB=-5V,Ic=0 -100 nA
DC current gain(note) hFE1
hFE2
VCE=-6V,Ic=-2mA
VCE=-6V,Ic=-150mA
120
25
700
Collector-emitter saturation voltage VCE(sat) Ic=-100mA,IB=-10mA -0.1 -0.3 V
Base-emitter saturation voltage VBE(sat) Ic=-100mA,IB=-10mA -1.1 V
Current gain bandwidth product fT V
CE=-10V,Ic=-1mA 80 MHz
Output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.0 7.0 pF
Noise Figure NF Ic=-0.1mA,VCE=-6V
RG=1kΩ,f=100Hz
0.5 6 dB
UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-004,B
CLASSIFICATION OF hFE1
RANK Y GR BL
RANGE 120-240 200-400 350-700
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
-0 -4 -8 -12 -16 -20
0
-10
-20
-30
-40
-50
I
B
=-50
µ
A
I
B
=-100
µ
A
I
B
=-150
µ
A
I
B
=-200
µ
A
I
B
=-250
µ
A
I
B
=-300
µ
A
Fig.2 DC current Gain
Ic,Collector current (mA)
HFE, DC current Gain
102
101
100
103
-103
-102
-101
-100
-10
-1
V
CE
=-6V
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
0 -0.2 -0.4 -0.6 -0.8 -1.0
V
CE
=-6V
Ic,Collector current (mA)
Saturation voltage (V)
-101
Fig.4 Saturation voltage Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
103
Current Gain-bandwidth
product,f
T(MHz)
100
101
102
V
CE
=-6V
Collector-Base voltage (V)
Cob,Capacitance (pF)
100
101
102
f=1MHz
I
E
=0
-10
-1
-100
-101
-102
-103
-102
-101
-100
-10
-1 -100-101-102-100-101-102-103
-10
-1
-10
-2
-100
-10
-1
-10
-1
10
-1
