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KSC1008 — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC1008 Rev. 1.1.0
November 2014
KSC1008
NPN Epitaxial Silicon Transistor
Features
• Low-Frequency Amplifier Medium Speed Switching
• High Collector-Base Voltage : VCBO = 80 V
• Collector Current : IC = 700 mA
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
• Complement to KSA708
Ordering Information(1)
Note:
1. Affix “-C-” m eans cente r coll ector p in. Affi x “ -O-, -Y-, -G- ” mean s h FE cl assi ficat ion. Su ffix “-BU” means bulk pack ing,
straight lead form. Suffix “-TA” means tape and ammo packing, 0.200 in-line spacing lead form.
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
KSC1008OBU C1008 O- TO-92 3L Bulk
KSC1008YBU C1008 Y- TO-92 3L Bulk
KSC1008YTA C1008 Y- TO-92 3L Ammo, 2000 pcs
KSC1008CYTA C1008 YC TO-92 3L Ammo, 2000 pcs
KSC1008GTA C1008 G- TO-92 3L Ammo, 2000 pcs
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 8 V
ICCollector Current 700 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 to 150 °C
KSC1008: 1. Emitter 2. Base 3. Collector
TO-92
1
KSC1008C: 1. Emitter 2. Collector 3. Base
KSC1008 — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC1008 Rev. 1.1.0 2
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
PDPower Dissipation 800 mW
Derate Above 25°C6.4mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 156 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 80 V
BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V
BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 8 V
ICBO Collector Cut-Of f Curren t VCB = 60 V, IE = 0 0.1 μA
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 0.1 μA
hFE DC Current Gain VCE = 2 V, IC = 50 mA 40 400
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.2 0.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.86 1.10 V
fTCurrent Gain Bandwidth Product VCE = 10 V, IC = 50 mA 30 50 MHz
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 1 MHz 8pF
Classification R O Y G
hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
KSC1008 — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC1008 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
0 5 10 15 20 25 30 35 40 45 50
0
20
40
60
80
100
120
140
160
180
200 IB = 1.8mA
IB = 1.6mA
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
0
20
40
60
80
100
120
140
160
180
200
220
240
VCE = 2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
VBE(sat)
VCE(sat)
IC=10IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
VCE=2V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100
1
10
100 f=1MHz
IE=0
Cob[pF],CAPACTIANCE
VCB[V], COLLECTOR-BASE VOLTAGE
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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