2006-03-09
Page 1
ISP 752 T
Smart Power High-Side-Switch
for Industrial Applications
Product Summary
Overvoltage protection Vbb
(
AZ
)
62 V
Operating voltage Vbb
(
on
)
6 ... 52 V
On-state resistance RON 200 mΩ
Nominal load current IL
(
nom
)
1.3 A
Operating temperature Ta-30...+85 °C
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• ESD - Protection
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• Very low standby current PG-DSO-8
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
2006-03-09
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ISP 752 T
Block Diagram
+ Vbb
IN
Signal GND
ESD
miniPROFET
OUT
GND
Logic
Voltage
source
Charge pump
Level shifter Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
Load GND
Load
VLogic
Overvoltage
protection
Pin Symbol Function
1GND Logic ground
2IN Input, activates the power switch in case of logic high signal
3OUT Output to the load
4NC not connected
5Vbb Positive power supply voltage
6Vbb Positive power supply voltage
7Vbb Positive power supply voltage
8Vbb Positive power supply voltage
Pin configuration
GND 1•8Vbb
IN 2 7 Vbb
OUT 3 6 Vbb
NC 4 5 Vbb
Top view
2006-03-09
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ISP 752 T
Maximum Ratings at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Supply voltage Vbb 52 V
Supply voltage for full short circuit protection Vbb
(
SC
)
50
Continuous input voltage VIN -10 ... +16
Load current (Short - circuit current, see page 5) ILself limited A
Current through input pin (DC) IIN ± 5 mA
Junction temperature Tj150 °C
Operating temperature Ta-30...+85
Storage temperature Tstg -40 ... +105
Power dissipation 1) Ptot 1.5 W
Inductive load switch-off energy dissipation1)2)
single pulse, (see page 8)
Tj =150 °C, IL = 1 A
EAS 125 mJ
Load dump protection2) VLoadDump3)= VA + VS
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 13.5 Ω
RL = 27 Ω
VLoaddump
73.5
83.5
V
Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
VESD
± 1
± 5
kV
Thermal Characteristics
Thermal resistance @ min. footprint Rth
(
JA
)
- 95 - K/W
Thermal resistance @ 6 cm2 cooling area 1) Rth
(
JA
)
- 70 83
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
2006-03-09
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ISP 752 T
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at T
j
= -40...+150°C, Vbb = 12..42V, unless otherwise specified min. typ. max.
Load Switching Capabilities and Characteristics
On-state resistance
Tj = 25 °C, IL = 1 A, Vbb = 9...52 V
Tj = 150 °C
RON
-
-
150
270
200
380
mΩ
Nominal load current; Device on PCB 1)
TC = 85 °C, Tj ≤ 150 °C
IL(nom) 1.3 1.7 - A
Turn-on time to 90% VOUT
RL = 47 Ω
ton - 80 180 µs
Turn-off time to 10% VOUT
RL = 47 Ω
toff - 80 200
Slew rate on 10 to 30% VOUT,
RL = 47 Ω, Vbb = 13.5 V
dV/dton - 0.7 2 V/µs
Slew rate off 70 to 40% VOUT,
RL = 47 Ω, Vbb = 13.5 V
-dV/dtoff - 0.9 2
Operating Parameters
Operating voltage Vbb
(
on
)
6 - 52 V
Undervoltage shutdown of charge pump
Tj = -40...+85 °C
Tj = 150 °C
Vbb(under)
-
-
-
-
4
5.5
Undervoltage restart of charge pump Vbb
(
u c
p)
- 4 5.5
Standby current
Tj = -40...+85 °C, VIN = low
Tj = +150 °C2) , VIN = low
Ibb(off)
-
-
-
-
15
18
µA
Leakage output current (included in Ibb(off))
VIN = low
IL(off) - - 5
Operating current
VIN = high
IGND - 0.8 2 mA
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2higher current due temperature sensor
2006-03-09
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ISP 752 T
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at T
j
= -40...+150°C, Vbb = 12..42V, unless otherwise specified min. typ. max.
Protection Functions1)
Initial peak short circuit current limit (pin 5 to 3)
Tj = -40 °C, Vbb = 20 V, tm = 150 µs
Tj = 25 °C
Tj = 150 °C
Tj = -40...+150 °C, Vbb > 40 V , ( see page 11 )
IL(SCp)
-
-
4
-
-
6.5
-
52)
9
-
-
-
A
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams)
Vbb < 40 V
Vbb > 40 V
IL(SCr)
-
-
6
4.5
-
-
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL),
Ibb = 4 mA
VON(CL) 59 63 - V
Overvoltage protection 3)
Ibb = 4 mA
Vbb(AZ) 62 - -
Thermal overload trip temperature T
t150 - - °C
Thermal hysteresis ∆T
t- 10 - K
Reverse Battery
Reverse battery4) -Vbb - - 52 V
Drain-source diode voltage (VOUT > Vbb)
Tj = 150 °C
-VON - 600 - mV
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 7
4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
2006-03-09
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ISP 752 T
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at T
j
= -40...+150°C, Vbb = 12..42V, unless otherwise specified min. typ. max.
Input
Input turn-on threshold voltage VIN
(
T+
)
- - 2.2 V
Input turn-off threshold voltage VIN
(
T-
)
0.8 - -
Input threshold hysteresis ∆VIN
(
T
)
- 0.4 -
Off state input current
VIN = 0.7 V
IIN(off) 1 - 25 µA
On state input current
VIN = 5 V
IIN(on) 3 - 25
Input resistance (see page 7) RI2 3.5 5 kΩ
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ISP 752 T
Terms Inductive and overvoltage output clamp
PROFET
V
IN OUT
GND
bb
VIN
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
RGND
+ Vbb
OUT
GND
VZ
VON
VON clamped to 59V min.
Overvoltage protection of logic part
Input circuit (ESD protection)
+
V
bb
IN
GND
GND
R
Signal GND
Logic
VZ2
I
R
VZ1
IN
GND
I
R
ZD
I
I
I
ESD-
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
VZ1=6.1V typ., V
Z2=Vbb(AZ)=62V min.,
RI=3.5 kΩ typ., RGND=150Ω
Reverse battery protection
Internal output pull down
GND
Logic
IN
OUT
L
R
Power GND
GND
R
Signal GND
Power
Inverse
I
R
Vbb
-
Diode
VOUT
Signal GND
RO
Vbb
RGND=150Ω, RI=3.5kΩ typ.,
Temperature protection is not active during
inverse current
RO = 200 kΩ typ.
2006-03-09
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ISP 752 T
Vbb disconnect with charged inductive
load
PROFET
V
IN OUT
GND
bb
Vbb
high
GND disconnect
PROFET
V
IN OUT
GND
bb
Vbb VIN V
GND
Inductive Load switch-off energy
dissipation
PROFET
V
IN OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
RL
L
{
L
Z
GND disconnect with GND pull up
PROFET
V
IN OUT
GND
bb
Vbb VGND
VIN
Energy stored in load inductance: E
L = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:
E
IL
RVV
IR
V
AS
L
L
bb OUT CL
LL
OUT CL
=+ +
*
**( | )*ln( *
||
)
()|
()
21
2006-03-09
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ISP 752 T
Typ. transient thermal impedance
ZthJA=f(tp) @ 6cm2 heatsink area
Parameter: D=tp/T
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1 10 2 10 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
D=0
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Typ. transient thermal impedance
ZthJC=f(tp) @ min. footprint
Parameter: D=tp/T
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1 10 2 10 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
D=0
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Typ. on-state resistance
RON = f(Tj) ; Vbb = 13,5V ; Vin = high
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
50
100
150
200
mΩ
300
RON
Typ. on-state resistance
RON = f(Vbb); IL = 1 A ; Vin = high
0 5 10 15 20 25 30 35 40 V50
Vbb
0
50
100
150
200
250
300
mΩ
400
RON
-40°C
25°C
150°C
2006-03-09
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ISP 752 T
Typ. turn off time
toff = f(Tj); RL = 47Ω
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
20
40
60
80
100
120
µs
160
toff
9...42V
Typ. turn on time
ton = f(Tj); RL = 47Ω
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
20
40
60
80
100
120
µs
160
ton
9V
13.5V
42V
Typ. slew rate on
dV/dton = f(Tj) ; RL = 47 Ω
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V/µs
2
dV
dton
9V
13.5V
42V
Typ. slew rate off
dV/dtoff = f(Tj); RL = 47 Ω
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
0.5
1
1.5
2
2.5
V/µs
3.5
-dV
dtoff
9V
13.5V
42V
2006-03-09
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ISP 752 T
Typ. leakage current
IL(off) = f(Tj) ; Vbb = 42V ; VIN = low
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
0.5
1
1.5
µA
2.5
IL(off)
Typ. standby current
Ibb(off) = f(Tj) ; Vbb = 42V ; VIN = low
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
2
4
6
µA
10
Ibb(off)
Typ. initial short circuit shutdown time
toff(SC) = f(Tj,start) ; Vbb = 20V
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
0.5
1
1.5
2
2.5
3
ms
4
toff(SC)
Typ. initial peak short circuit current limit
IL(SCp) = f(Vbb)
0 10 20 30 40 V60
Vbb
0
2
4
6
A
10
IL(SCp)
-40°C
25°C
150°C
2006-03-09
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ISP 752 T
Typ. input current
IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high
VINlow ≤ 0,7V; VINhigh = 5V
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
2
4
6
8
µA
12
IIN
on
off
Typ. input current
IIN = f(VIN); Vbb = 13.5V
0123456V8
VIN
0
10
20
30
µA
50
IIN
-40...25°C 150°C
Typ. input threshold voltage
VIN(th) = f(Tj) ; Vbb = 13,5V
-40 -20 0 20 40 60 80 100 120 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
VIN(th)
on
off
Typ. input threshold voltage
VIN(th) = f(Vbb) ; Tj = 25°C
0 10 20 30 V50
Vbb
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
VIN(th)
on
off
2006-03-09
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ISP 752 T
Maximum allowable load inductance
for a single switch off
L = f(IL); Tjstart=150°C, RL=0Ω
0 0.25 0.5 0.75 1 A1.5
IL
0
200
400
600
800
1000
1200
1400
1600
mH
2000
L
42V 13,5V
Maximum allowable inductive switch-off
energy, single pulse
EAS = f(IL); Tjstart = 150°C, Vbb = 13,5V
0 0.25 0.5 0.75 1 A1.5
IL
0
200
400
600
800
1000
1200
1400
mJ
1800
EAS
2006-03-09
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ISP 752 T
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
IN
OUT
L
t
I
IN
V
OUT
V
bb
t
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
IN
t
VOUT
IL
t
t
on
off
90%
dV/dton
dV /d to ff
10%
IN
L
t
V
I
OUT
2006-03-09
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ISP 752 T
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
t
I
IN
L
L(SCr)
I
IL(SCp)
t
off(SC)
t
m
t
Figure 5: Undervoltage restart of charge pump
Heating up of the chip may require several milliseconds, depending
on external conditions.
V o n
V
b b ( u n d e r )
V b b ( u c p )
V b b
Figure 4: Overtemperature:
Reset if Tj < Tjt
IN
OUT
J
t
V
T
2006-03-09
Page 16
ISP 752 T
Package and ordering code
all dimensions in mm
Package: Ordering code:
PG-DSO-8 SP000211730
Printed circuit board (FR4, 1.5mm thick, one
layer 70µm, 6cm2 active heatsink area ) as
a reference for max. power dissipation Ptot
nominal load current IL(nom) and thermal
resistance Rthja
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
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of characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your
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(see address list).
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Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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