This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.60.2 9.90.3 3.00.5 2.90.2 3.20.1 * High forward current transfer ratio hFE * Dielectric breakdown voltage of the package: > 5 kV Parameter Collector-base voltage 2SD2420 (Emitter open) 2SD2420A Symbol Rating Unit VCBO 60 V Collector-emitter voltage 2SD2420 (Base open) 80 VCEO 2SD2420A Emitter-base voltage (Collector open) 60 Collector current IC Peak collector current ICP Collector power dissipation PC Ta = 25C 1 5 V 4 A 8 A 30 W Tj Storage temperature Tstg 150 C -55 to +150 C 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C B Electrical Characteristics Ta = 25C 3C Symbol Collector-emitter voltage (Base open) VCEO IC = 30 mA, IB = 0 Base-emitter voltage VBE 2SD2420 current (Emitter open) ICBO 2SD2420A Collector-emitter cutoff 2SD2420 ICEO 2SD2420A en an current (Base open) ce /D isc on tin Collector-base cutoff ue Parameter int Emitter-base cutoff current (Collector open) Ma Forward current transfer ratio Min E Max Unit VCE = 3 V, IC = 3 A Typ 2.5 V A 60 V VCB = 60 V, IE = 0 200 VCB = 80 V, IE = 0 200 VCE = 30 V, IB = 0 500 VCE = 40 V, IB = 0 500 VEB = 5 V, IC = 0 hFE1 VCE = 3 V, IC = 0.5 A 1 000 VCE = 3 V, IC = 3 A 2 000 hFE2 Collector-emitter saturation voltage Conditions IEBO * 0.550.15 2.540.30 5.080.50 2.0 Junction temperature 2.60.1 0.80.1 V 80 VEBO 1.40.2 1.60.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Absolute Maximum Ratings TC = 25C 13.70.2 4.20.2 Solder Dip M Di ain sc te on na tin nc ue e/ d 15.00.5 Features VCE(sat)1 IC = 3 A, IB = 12 mA VCE(sat)2 IC = 5 A, IB = 20 mA 2 A mA 10 000 2.0 V 4.0 fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 3 A, IB1 = 12 mA, IB2 = -12 mA 0.5 s Storage time tstg VCC = 50 V 4.0 s Fall time tf 1.0 s Transition frequency Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q P 2 000 to 5 000 4 000 to 10 000 Publication date: November 2004 SJD00267CED 1 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.