MB 6115865 0001920 O22 me MSC 1N935,A&B thru 1N940,A &B MICROSEMI CORP S4E D FEATURES ZENER VOLTAGE 9.0V + 5% (See Note 1) e INS358, 9378, 938B, 9398, 940B HAVE JAN, JANTX, JANTXV, AND -1 QUALIFICATIONS TO MIL-S-19500/156 SINS3SA RADIATION HARDENED DEVICES AVAILABLE (SEE NOTE 5) @ JANS EQUIVALENT AVAILABLE VIA SCO MAXIMUM RATINGS Operating Temperature: 65C to +175C. . Storage Temperature: 65C to +175C DC Power Dissipation: 500 mW @ 25C. Power Derating: 3.33 mW/C above 25C. *ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified aane - MAXIMUM MPERATURE ~ AX TEMP! 4EpEe vine ZENER ZENER STABILITY EFFECTIVE UMBERS 2 @ | TEST IMPEDANCE (NOTE 3 & 4) TEMPERATURE Wl z zr CURRENT (NOTE 2) AVir TEMPERATURE COEFFICIENT (HOTE 1 & 4) In In MAXIMUM RANGE iva VOLTS mA OHMS RY *c %/6 1N935 855-945 75 20 67 Oto + 75 0.01 1N935A 8.55-9.45 75 20 139 55 to +100 0.01 1N9358 8.55.9.45 75 20 184 55 to +150 0.01 1N936 8.55-9.45 75 20 33 Oto + 75 0.005 1N936A 8.55-9.45 78 20 69 55 to +100 0.005 1N936B 8.55-9.45 75 20 92 55 to.+150 0.005 1N937 9.55-9.45 75 20 13 Oto + 75 0.002 1N937A 8.55-9.45 15 20 7 55 to +100 0.002 1N937B 8559.45 75 20 7 55 to +150 0,002 1N938 8.55-9.45 75 20 6 Oto + 75 0.002 1N938A 8.55-9.45 75 20 13 55 to +100 0.001 1N938B 8.55.9.45 75 20 18 55 to +150 0.001 1N939 B.55-9.45 75 20 3 Oto+ 75 0.0005 1N939A 8.55-9.45 75 20 7 ~55 to +100 0.0005 1N939B 8.55-9.45 75 20 9 55 to +150 0.0005 1N940 8.55-9.45 75 20 13 Oto + 75 0.0002 1N940A $.55-9.45 75 20 27 55 to +100 0.0002 1N940B 8.55.9.45 75 20 37 55 to +150 9.0002 *JEDEC Registered Data NOTE 1 When ordering devices with tighter tolerances than specified, use a nominal center voltage of 9.2V. NOTE 2 Measured by superimposing 0.75 mA ac rms on 7.5 mA DC @ 25C. NOTE 3 The maximum allowable change observed over the entire tempera- ture range i.e., the diode voltage will not exceed the specified mV change at any discrete temperature between the established limits. NOTE 4 Voltage measurements to be performed 15 seconds after applica- tion of DC current. NOTES Designate Radiation Hardened devices with RH prefix instead of 1N, ic. RH938A instead of 1N938A. M@ 6115465 0001521 TEI MBMNSC MICROSEMI CORP SIE D 1N935 thru 1N940B NOTE 5 The curve shown in Fig. 3 is typical of the diode series and greatly simplifies the estimation of the Temperature Coefficient (TC) when the diode is operated at currents other than 7.5 mA. EXAMPLE: A diode in this series is operated at a current of 7.5 mA and has specified Temperature Coefficient (TC) limits of +0.005%/C. To obtain the typical Temperature Coefficient limits for this same diode operated at a current of 6.0 mA, the new TC limits (%/C) can be estimated using the graph in FIGURE 3. At a test current of 6.0 mA the change in Temperature Coefficient (TC) is approximately 0.0009%/C. The algebraic sum of +0.005%/C and 0.0009%/C gives the new limits of +0.0041%/C and 0.0059%/C. NOTE 6 The curve in Figure 4 illustrates the change of diode voltage arising from the effect of impedance. It is, in effect, an exploded view of the zener operating region of the I-V characteristic. In conjunction with Fig. 3 this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. Pd, RATED POWER DISSIPATION (mW) 75 100 125 150 175-200 T_, Lead temperature (C) 3/8 fram body FIGURE 2 Power Derating Curve 25 50 126 +0.006 +0.540 +300 55 +0.004 +0.360 of 5 4200 Ee +0.002 0.180 af ae +100 re 0 0 23 3 0 1 si 0.002 0.180 58 ae 100 = 0.004 75 0,360 2s ~200 - 0.006 300 2 4 6 10 12 14 16 18 20 I, OPERATING CURRENT (mA) FIGURE 3 Typical change of Temperature Coefficient with Change in Operating Current. 8 2 4 6 8 10 12 #14 #16 #18 I,, OPERATING CURRENT (mA) FIGURE 4 Typical change of Zener Voltage with Change in Operating Current. 20