Document Number: 93176 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 08-Apr-08 1
Fast Recovery Diodes
(Stud Version), 400/450 A
SD453N/R Series
Vishay Semiconductors
FEATURES
• High power fast recovery diode series
• 2.0 to 3.0 µs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version case style B-8
• Maximum junction temperature 150 °C
•RoHS complaint
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 400/450 A
B-8
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD453N/R UNITS
S20 S30
IF(AV)
400 450 A
TC70 °C
IF(RMS) 630 710
A
IFSM
50 Hz 9300 9600
60 Hz 9730 10 050
VRRM Range 1200 to 2500 V
trr
2.0 3.0 µs
TJ25 °C
TJ- 40 to 150
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
SD453N/R
12 1200 1300
50
16 1600 1700
20 2000 2100
25 2500 2600
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2Revision: 08-Apr-08
SD453N/R Series
Vishay Semiconductors Fast Recovery Diodes
(Stud Version), 400/450 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS SD453N/R UNITS
S20 S30
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave 400 450 A
70 °C
Maximum RMS forward current at
case temperature IF(RMS)
630 710 A
55 52 °C
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9300 9600
A
t = 8.3 ms 9730 10 050
t = 10 ms 100 % VRRM
reapplied
7820 8070
t = 8.3 ms 8190 8450
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
432 460
kA2s
t = 8.3 ms 395 420
t = 10 ms 100 % VRRM
reapplied
306 326
t = 8.3 ms 279 297
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA2s
Low level value of threshold voltage VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum 1.00 0.95 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.09 1.04
Low level value of forward
slope resistance rf1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum 0.80 0.60
m
High level value of forward
slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.74 0.54
Maximum forward voltage drop VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave 2.20 1.85 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/ s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S20 2.0 1000 50 - 50 3.5 250 120
S30 3.0 5.0 380 150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and
storage temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.1
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04
Mounting torque ± 10 % Not-lubricated threads 50 Nm
Approximate weight 454 g
Case style See dimensions (link at the end of datasheet) B-8
IFM trr
dir
dt
IRM(REC)
Qrr
t
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Revision: 08-Apr-08 3
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.010 0.008
TJ = TJ maximum K/W
120° 0.014 0.014
90° 0.017 0.019
60° 0.025 0.026
30° 0.042 0.042
60
70
80
90
100
110
120
130
140
150
0 50 100 150 200 250 300 350 400 450
30° 60° 90° 120° 180°
Average Forward Current (A)
Conduction Angle
Maximum Allowable Case Temperature (°C)
SD 4 5 3 N / R. . S2 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 700
30°
60° 90°
180° DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
SD 4 5 3 N / R. . S2 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
60
70
80
90
100
110
120
130
140
150
0100200300400500
30° 60° 90° 120°
180°
Average Forward Current (A)
Conduction Angle
Maximum Allowable Case Temperature (°C)
SD 4 5 3 N / R. . S3 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
SD 4 5 3 N / R. . S3 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
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4Revision: 08-Apr-08
SD453N/R Series
Vishay Semiconductors Fast Recovery Diodes
(Stud Version), 400/450 A
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400 450
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m i t
Conduction Angle
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Period
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150°C
J
0
100
200
300
400
500
600
700
800
0 100 200 300 400 500
180°
120°
90°
60°
30°
Averag e Forw ard Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m it
Conduction Angle
SD 4 5 3 N / R. . S3 0 Se r i e s
T = 1 5 0 ° C
J
2000
3000
4000
5000
6000
7000
8000
9000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pea k Half Sine Wa ve Forwa rd Current (A)
SD453N/ R..S20 Se ries
Init ia l T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Tra in Dura t io n ( s)
Peak Half Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
SD453N/ R..S20 Se ries
Versus Pulse Train Duration.
Initia l T = 150 °C
No Voltage Reapplied
Rated V Reapplied
RRM
J
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Revision: 08-Apr-08 5
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A Vishay Semiconductors
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
Fig. 15 - Thermal Impedance ZthJC Characteristic
2000
3000
4000
5000
6000
7000
8000
9000
110100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
Pea k Ha lf Sine Wave Forward Current (A)
Init ia l T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
SD 4 5 3 N / R. . S3 0 Se r i e s
At Any Rat ed Load Cond ition And With
Rated V Applied Following Surge.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Train Duration (s)
Pea k Ha lf Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
SD453N/ R..S30 Serie s
Versus Pulse Train Duration.
Init ia l T = 150 °C
No Volta g e Rea pplie d
Rated V Reapplied
RRM
J
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 150°C
J
SD453N/ R..S20 Se ries
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 150°C
J
SD453N/ R..S30 Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Transient Thermal Impedance Z (K/W)
Steady State Value:
R = 0.1 K/ W
(DC Operation)
thJC
SD453N/ R..S20/ S30 Se rie s
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6Revision: 08-Apr-08
SD453N/R Series
Vishay Semiconductors Fast Recovery Diodes
(Stud Version), 400/450 A
Fig. 16 - Typical Forward Recovery Characteristics
Fig. 17 - Typical Forward Recovery Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Recovery Time Characteristics
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 2 5 ° C
J
Fo rwa rd Rec overy (V)
T = 150°C
J
SD 4 5 3 N / R. . S2 0 Se r i e s
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
0
20
40
60
80
100
0 400 800 120016002000
T = 2 5 ° C
J
Forwa rd Rec overy (V)
T = 1 5 0 ° C
J
SD 4 5 3 N / R. . S3 0 Se r i e s
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
2
2.5
3
3.5
4
4.5
5
5.5
6
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Rec overy Time - Trr (µs)
500 A
150 A
I = 1000 A
Si n e P u l s e
FM
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150 °C; V > 100V
Jr
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
150 A
I = 1000 A
Si n e Pu l se
FM
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150 °C; V > 100V
Jr
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
Maximum Reverse Recovery Current - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
150 A
I = 1000 A
Sine Pulse
FM
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150 °C; V > 100V
Jr
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
150 A
I = 1000 A
Si n e Pu l se
FM
SD453N/ R..S30 Series
T = 150 °C, V > 100V
Jr
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Revision: 08-Apr-08 7
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A Vishay Semiconductors
Fig. 22 - Recovery Charge Characteristics
Fig. 23 - Recovery Current Characteristics
Fig. 24 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 25 - Frequency Characteristics
Fig. 26 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 27 - Frequency Characteristics
0
200
400
600
800
1000
1200
0 50 100 150 200 250 300
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
150 A
I = 1000 A
Si n e Pu l se
FM
SD453N/ R..S30 Series
T = 150 °C; V > 100V
r
J
0
50
100
150
200
250
300
350
400
450
500
550
0 50 100 150 200 250 300
Ma ximum Re verse Re c o very Curre nt - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
150 A
I = 1000 A
Si n e Pu l se
FM
SD 4 5 3 N / R. . S3 0 Se r ie s
T = 150 °C; V > 100V
Jr
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
Pu l se Ba se w i d t h ( µ s)
Peak Forwa rd Current (A)
10 joules p er pulse
6
4
d v/ d t = 1000V/ µs
Sinusoida l Pulse
0.6
0.4
0.2
0.1
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150°C, V = 800V
J
RRM
tp
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
Pulse Ba se w id t h ( µ s)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
400
1000
2000
6000
Peak Forward Current (A)
Si n u s o i d a l Pu l se
1500
3000
T = 70°C, V = 800V
C
RRM
SD 4 5 3 N/ R. . S2 0 Se r i e s
tp
600
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pu l se Ba se w id t h ( µ s)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
0.8
0.6
SD 4 5 3 N / R. . S20 Se r i e s
T = 150°C, V = 800V
J
RRM
d v/ d t = 1000V/ µs; d i/ dt = 300A/ µs
tp
0.4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pu lse Ba se w id t h (µs)
Tr a p e zo i d a l Pu l se
50 Hz
100200
400
1000
1500
2000
4000
3000
600
6000
Pea k Fo rw a r d C u rr en t ( A)
SD 4 5 3 N/ R. . S2 0 Se r i e s
T = 70°C, V = 800V
dv/dt = 1000V/us,
d i/ d t = 300A/ us
RRM
C
tp
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8Revision: 08-Apr-08
SD453N/R Series
Vishay Semiconductors Fast Recovery Diodes
(Stud Version), 400/450 A
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 29 - Frequency Characteristics
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
Pulse Ba se w i d t h (µ s)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
0.6
0.4
SD 4 5 3 N / R. . S2 0 Se r i e s
dv/dt = 1000V/µs
d i/ d t = 100A/ µs
T = 1 5 0 ° C , V = 8 0 0 V
J
RRM
tp
0.2
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pu lse Ba se w id t h ( µ s)
Tr a p e zo i d a l P u l s e
50 Hz
100
200
400
1000
1500
2000
4000
3000
600
6000
Peak Fo rw ard Current (A)
T = 70°C, V = 800V
dv/dt = 1000V/us,
d i/ d t = 100A/ us
RRM
C
SD453N/ R..S20 Serie s
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
Pulse Ba se w id t h (µ s)
Pe a k Forw a r d C u rre n t ( A )
10 jo ules p er p ulse
6
4
dv/dt = 1000V/µs
Sinusoida l Pulse
0.8
0.6
0.4
0.2
SD453N/ R...S30 Series
T = 150°C , V = 800V
J
RRM
tp
0.1
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
Pulse Ba se w i d t h (µs)
50 Hz
200 100
4000
dv/dt = 1000V/us
400
1000
2000
6000
Pe a k Fo rw a r d C u rrent ( A)
Si n u so i d a l Pu l se
1500
3000
SD 4 5 3 N / R. . S3 0 Se r i e s
6000
T = 70°C, V = 800V
RRM
C
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba se w id t h ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forwa rd Current (A)
0.8
SD453N/ R..S30 Series
T = 150°C, V = 800V
J
RRM
0.6
d v/ d t = 1000V/ µs; d i/ d t = 300A/ µs
tp
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
Pulse Ba se w id t h ( µs)
Tr a p e z o i d a l P u l s e
50 Hz
100
200
400
1000
2000
4000
3000
600
Pe ak Fo rwa rd Curre nt ( A)
dv/ dt = 1000V/us,
di/dt = 300A/us
T = 70°C, V = 800V
SD 4 5 3 N / R. . S3 0 Se r i e s
RRM
tp
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SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A Vishay Semiconductors
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 35 - Frequency Characteristics
ORDERING INFORMATION TABLE
1E2
1E3
1E4
1E11E21E31E4
1
2
Pulse Ba sew id t h ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
SD 4 5 3 N / R. . S3 0 Se r i e s
T = 1 5 0 ° C , V = 8 0 0 V
J
RRM
0.8
0.6
d v/ d t = 1000V/ µs; d i/ d t = 100A/ µs
tp
0.4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba sew id t h (µs)
Tr a p e zo i d a l Pu l se
50 Hz
100200
400
1000
1500
2000
4000
3000
600
Peak Forward Current (A)
SD 4 5 3 N / R. . S3 0 Series
T = 70°C, V = 800V
dv/dt = 1000V/us,
di/ d t = 100A/ us
C
RRM
tp
Device code
51 324
6789
SD 45 3 N 25 S30 P S C
1- Diode
2- Essential part number
3-3 = Fast recovery
4-N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
6-t
rr code (see Recovery Characteristics table)
7-P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 x 1.5
8-7S = Isolated lead with silicon sleeve
(red = Reverse polarity; blue = Normal polarity)
None = Not isolated lead
T = Threaded top terminal 3/8" 24UNF-2A
9- C = Ceramic housing
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95303
Document Number: 95303 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 11-Apr-08 1
B-8
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
26 (1.023) MAX.
10.5 (0.41) DIA.
5 (0.20) ± 0.3 (0.01)
12 (0.47) MIN.
27.5 (1.08)
MAX.
38 (1.5)
DIA. MAX.
Ceramic housing
SW 45
C.S. 70 mm2
21 (0.83) MAX.
3/4"-16UNF-2A *
115 (4.52) MIN.
245 (9.645)
255 (10.04)
80 (3.15)
MAX.
47 (1.85)
MAX.
*For metric device: M24 x 1.5 - length 21 (0.83) MAX.
contact factory
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Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.