1
FMH28N50ES FUJI POWER MOSFET
Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
Drain-Source Voltage VDS 500 V
VDSX 500 V VGS = -30V
Continuous Drain Current ID±28 A
Pulsed Drain Current IDP ±112 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current IAR 28 A Note*1
Non-Repetitive Maximum Avalanche Energy EAS 1033.1 mJ Note*2
Repetitive Maximum Avalanche Energy EAR 40 mJ Note*3
Peak Diode Recovery dV/dt dV/dt 6.9 kV/µs Note*4
Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5
Maximum Power Dissipation PD
2.50 W Ta=25°C
400 Tc=25°C
Operating and Storage Temperature range Tch 150 °C
Tstg -55 to + 150 °C
Outline Drawings [mm]
Equivalent circuit schematic
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS =0V 500 - - V
Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 3.7 4.2 4.7 V
Zero Gate Voltage Drain Current IDSS
VDS=500V, VGS =0V Tch=25°C - - 25 µA
VDS=400V, VGS =0V Tch =125°C - - 250
Gate-Source Leakage Current IGSS VGS =±30V, VDS=0V - 10 100 nA
Drain-Source On-State Resistance RDS (on) ID=14A, VGS=10V - 0.16 0.19 Ω
Forward Transconductance gfs ID=14A, VDS =25V 10.5 21 - S
Input Capacitance Ciss VDS=25V
VGS=0V
f=1MHz
- 3500 5250
pFOutput Capacitance Coss - 420 630
Reverse Transfer Capacitance Crss - 24 36
Turn-On Time td(on) Vcc =300V
VGS=10V
ID=14A
RGS =8.2Ω
- 45 67.5
ns
tr - 40 60
Turn-Off Time td(off) - 107 160.5
tf - 17 25.5
Total Gate Charge QGVcc =250V
ID=28A
VGS=10V
- 92 138
nC
Gate-Source Charge QGS - 30 45
Gate-Drain Charge QGD - 34 51
Gate-Drain Crossover Charge QSW - 13 19.5
Avalanche Capability IAV L=1.04mH, Tch =25°C 28 - - A
Diode Forward On-Voltage VSD IF=28A, VGS =0V, Tch=25°C - 0.90 1.35 V
Reverse Recovery Time trr IF=28A, VGS=0V
-di/dt=100A/µs, Tch=25°C
- 0.72 - µs
Reverse Recovery Charge Qrr - 11.2 - µC
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, I
AS
=12A, L=13.2mH, Vcc=50V, R
G
=50Ω.
E
AS
limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Thermal resistance Rth (ch-c) Channel to Case 0.313 °C/W
Rth (ch-a) Channel to Ambient 50.0 °C/W
Gate(G)
Source(S)
Drain(D)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I
F
≤-I
D
, -di/dt=100A/μs, Vcc≤BV
DSS
, Tch≤150°C.
Note *5 : I
F
≤-I
D
, dv/dt=6.9kV/μs, Vcc≤BV
DSS
, Tch≤150°C.
TO-3P (Q)
2
FMH28N50ES
2
FUJI POWER MOSFET
0 4 8 12 16 20 24
0
10
20
30
40
50
60
70
80
7.5V
8.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
10V
7.0V
6.5V
VGS=6.0V
0 2 4 6 8 10 12
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
0 10 20 30 40 50 60 70 80
0.1
0.2
0.3
0.4
0.5
0.6
0.7
6.5V
RDS(on) [ Ω]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
10V
8V
20V
7V
VGS=6.0V
0 25 50 75 100 125 150
0
100
200
300
400
500
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
100101102103
10-2
10-1
100
101
102
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
t
PD
Power lo ss waveform :
Square waveform
t
PD
t
PD
Power lo ss waveform :
Square waveform
ID [A]
VDS [V]
t=
1µs
10µs
1ms
100µs
3
3
FUJI POWER MOSFET
FMH28N50ES
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
RDS(on) [ Ω]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=14A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
typ.
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C]
10-2 10-1 100101102
100
101
102
103
104
C[pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω
td(on)
tr
tf
td(off)
t[ns]
ID [A]
0 20 40 60 80 100 120 140
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=28A,Tch=25 °C
VGS[V]
400V
250V
Vcc= 100V
4
FMH28N50ES
4
FUJI POWER MOSFET
0 25 50 75 100 125 150
0
200
400
600
800
1000
1200
IAS=12A
IAS=17A
IAS=28A
EAV[mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=28A
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch- c) [°C/ W]
t [sec]
5
5
FUJI POWER MOSFET
FMH28N50ES
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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normal reliability requirements.
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such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
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accordance with instructions set forth herein.
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