ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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Optocoupler, Phototransistor Output (Dual, Quad Channel)
DESCRIPTION
The ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5 are optically coupled
isolated pairs employing GaAs infrared LEDs and silicon
NPN phototransistor. Signal information, including a DC
level, can be transmitted by the drive while maintaining a
high degree of electrical isolation between input and output.
The ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5 are especially
designed for driving medium-speed logic and can be used
to eliminate troublesome ground loop and noise problems.
Also these couplers can be used to replace relays and
transformers in many digital interface applications such as
CTR modulation.
The ILD1, ILD2, ILD5 has two isolated channels in a single
DIP package and the ILQ1, ILQ2, ILQ5 has four isolated
channels per package.
FEATURES
• Current transfer ratio at IF = 10 mA
• Isolation test voltage, 5300 VRMS
• Compliant to RoHS Directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• CSA 93751
• BSI IEC 60950; IEC 60065
• DIN EN 60747-5-2 (VDE 0884) available with option 1
•FIMKO
i179015-3
1
2
3
4
8
7
6
5
E
C
C
E
A
C
C
A
A
C
C
A
A
C
C
A
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
V
DE
i179012-1
Dual Channel
Quad Channel
ORDERING INFORMATION
ILx#-X0##T
PART NUMBER
x = D (Dual) or Q (Quad)
PACKAGE OPTION TAPE AND
REEL
AGENCY CERTIFIED/PACKAGE DUAL CHANNEL QUAD CHANNEL
CTR (%)
UL, CSA, BSI, FIMKO 20 to 300 100 to 500 50 to 400 20 to 300 100 to 500 50 to 400
DIP-8 ILD1 ILD2 ILD5 - - -
DIP-8, 400 mil, option 6 - ILD2-X006 - - - -
SMD-8, option 7 ILD1-X007T (1) ILD2-X007T (1) ----
SMD-8, option 9 ILD1-X009T (1) ILD2-X009T (1) ILD5-X009T (1) ---
DIP-16 - - - ILQ1 ILQ2 ILQ5
DIP-16, 400 mil, option 6 - - - ILQ1-X006 ILQ2-X006 -
SMD-16, option 7 - - - ILQ1-X007 ILQ2-X007T (1) -
SMD-16, option 9 - - - ILQ1-X009T (1) ILQ2-X009T (1) ILQ5-X009T (1)
> 0.1 mm
10.16 mm
> 0.7 mm
7.62 mm
DIP-#
Option 7
Option 6
Option 9
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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Notes
• Additional options may be possible, please contact sales office.
(1) Also available in tubes; do not put T on end.
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
VDE, UL, CSA, BSI, FIMKO 20 to 300 100 to 500 50 to 400 20 to 300 100 to 500 50 to 400
DIP-8 ILD1-X001 ILD2-X001 ILD5-X001 - - -
DIP-8, 400 mil, option 6 - ILD2-X016 - - - -
SMD-8, option 7 - ILD2-X017 - - - -
SMD-8, option 9 ILD1-X019T - - - - -
DIP-16 - - - - ILQ2-X001 -
DIP-16, 400 mil, option 6 - - - - ILQ2-X016 -
SMD-16, option 7 - - - - ILQ2-X017T (1) -
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF 60 mA
Surge current IFSM 2.5 A
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.3 mW/°C
OUTPUT
Collector emitter reverse voltage
ILD1 VCEO 50 V
ILQ1 VCEO 50 V
ILD2 VCEO 70 V
ILQ2 VCEO 70 V
ILD5 VCEO 70 V
ILQ5 VCEO 70 V
Collector current IC50 mA
t < 1 ms IC400 mA
Power dissipation Pdiss 200 mW
Derate lineary from 25 °C 2.6 mW/°C
COUPLER
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Creepage distance 7mm
Clearance distance 7mm
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Package power dissipation Ptot 250 mW
Derate linearly from 25 °C 3.3 mW/°C
Storage temperature Tstg - 40 to + 150 °C
Operating temperature Tamb - 40 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (2) 2 mm from case bottom Tsld 260 °C
AGENCY CERTIFIED/PACKAGE DUAL CHANNEL QUAD CHANNEL
CTR (%)
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA VF1.25 1.65 V
Reverse current VR = 6 V IR0.01 10 μA
Capacitance VR = 0 V, f = 1 MHz CO25 pF
Thermal resistance, junction to lead TthJL 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 6.8 pF
Collector emitter leakage current VVCE = 10 V ICEO 550nA
Saturation voltage, collector emitter IC = 1 mA, IB = 20 μA VCESAT 0.25 0.4 V
DC forward current gain VCE = 10 V, IB = 20 μA hFE 200 650 1800
DC forward current gain saturated VCE = 0.4 V, IB = 20 μA hFEsat 120 400 600
Thermal resistance, junction to lead Rthjl 500 K/W
COUPLER
Capacitance (input to output) VIO = 0 V, f = 1 MHz CIO 0.8 pF
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
(collector emitter
saturated)
IF =10 mA, VCE = 0.4 V
ILD1 CTRCEsat 75 %
ILQ1 CTRCEsat 75 %
ILD2 CTRCEsat 170 %
ILQ2 CTRCEsat 170 %
ILD5 CTRCEsat 100 %
ILQ5 CTRCEsat 100 %
IF =10 mA, VCE = 10 V
ILD1 CTRCE 20 80 300 %
ILQ1 CTRCE 20 80 300 %
ILD2 CTRCE 100 200 500 %
ILQ2 CTRCE 100 200 500 %
ILD5 CTRCE 50 130 400 %
ILQ5 CTRCE 50 130 400 %
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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Rev. 1.8, 28-Jun-11 4Document Number: 83646
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Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). These optocouplers are suitable for “safety electrical insulation” only within the
safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according
to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO
1012
VIO = 500 V, Tamb = 100 °C 1011
Climatic classification
(according to IEC 68 part 1) 55/100/21
Comparative tracking index CTI 175
Rated impulse voltage VIOTM 10 kV
Maximum working voltage Recurring peak voltage VIORM 890 V
Forward current ISI 275 mA
Power dissipation PSO 400 mW
Safety temperature TSI 175 °C
Creepage distance 7.0 mm
Clearance distance 7.0 mm
Insulation distance per IEC 60950 2.10.5.1 0.4 mm
T
SI
- Safety Temperature (°C)
0
50
100
150
200
250
300
350
400
450
0 25 50 75 100 125 150 175
Phototransistor
P
SO
(mW)
IR-diode
I
SI
(mA)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s t
stres
t
3
t
4
t
2
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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Rev. 1.8, 28-Jun-11 5Document Number: 83646
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SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Current VCE = 5 V, RL = 75 , 50 % of VPP
ILD1 IF20 mA
ILQ1 IF20 mA
ILD2 IF5mA
ILQ2 IF5mA
ILD5 IF10 mA
ILQ5 IF10 mA
Delay VCE = 5 V, RL = 75 , 50 % of VPP
ILD1 tD0.8 μs
ILQ1 tD0.8 μs
ILD2 tD1.7 μs
ILQ2 tD1.7 μs
ILD5 tD1.7 μs
ILQ5 tD1.7 μs
Rise time VCE = 5 V, RL = 75 , 50 % of VPP
ILD1 tr1.9 μs
ILQ1 tr1.9 μs
ILD2 tr2.6 μs
ILQ2 tr2.6 μs
ILD5 tr2.6 μs
ILQ5 tr2.6 μs
Storage VCE = 5 V, RL = 75 , 50 % of VPP
ILD1 ts0.2 μs
ILQ1 ts0.2 μs
ILD2 ts0.4 μs
ILQ2 ts0.4 μs
ILD5 ts0.4 μs
ILQ5 ts0.4 μs
Fall time VCE = 5 V, RL = 75 , 50 % of VPP
ILD1 tf1.4 μs
ILQ1 tf1.4 μs
ILD2 tf2.2 μs
ILQ2 tf2.2 μs
ILD5 tf2.2 μs
ILQ5 tf2.2 μs
Propagation H to L VCE = 5 V, RL = 75 , 50 % of VPP
ILD1 tPHL 0.7 μs
ILQ1 tPHL 0.7 μs
ILD2 tPHL 1.2 μs
ILQ2 tPHL 1.2 μs
ILD5 tPHL 1.1 μs
ILQ5 tPHL 1.1 μs
Propagation L to H VCE = 5 V, RL = 75 , 50 % of VPP
ILD1 tPLH 1.4 μs
ILQ1 tPLH 1.4 μs
ILD2 tPLH 2.3 μs
ILQ2 tPLH 2.3 μs
ILD5 tPLH 2.5 μs
ILQ5 tPLH 2.5 μs
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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SATURATED
Current VCE = 0.4 V, RL = 1 k, VCC = 5 V,
VTH = 1.5 V
ILD1 IF20 mA
ILQ1 IF20 mA
ILD2 IF5mA
ILQ2 IF5mA
ILD5 IF10 mA
ILQ5 IF10 mA
Delay VCE = 0.4 V, RL = 1 k, VCC = 5 V,
VTH = 1.5 V
ILD1 tD0.8 μs
ILQ1 tD0.8 μs
ILD2 tD1μs
ILQ2 tD1μs
ILD5 tD1.7 μs
ILQ5 tD1.7 μs
Rise time VCE = 0.4 V, RL = 1 k, VCC = 5 V,
VTH = 1.5 V
ILD1 tr1.2 μs
ILQ1 tr1.2 μs
ILD2 tr2μs
ILQ2 tr2μs
ILD5 tr7μs
ILQ5 tr7μs
Storage VCE = 0.4 V, RL = 1 k, VCC = 5 V,
VTH = 1.5 V
ILD1 ts7.4 μs
ILQ1 ts7.4 μs
ILD2 ts5.4 μs
ILQ2 ts5.4 μs
ILD5 ts4.6 μs
ILQ5 ts4.6 μs
Fall time VCE = 0.4 V, RL = 1 k, VCC = 5 V,
VTH = 1.5 V
ILD1 tf7.6 μs
ILQ1 tf7.6 μs
ILD2 tf13.5 μs
ILQ2 tf13.5 μs
ILD5 tf20 μs
ILQ5 tf20 μs
Propagation H to L VCE = 0.4 V, RL = 1 k, VCC = 5 V,
VTH = 1.5 V
ILD1 tPHL 1.6 μs
ILQ1 tPHL 1.6 μs
ILD2 tPHL 5.4 μs
ILQ2 tPHL 5.4 μs
ILD5 tPHL 2.6 μs
ILQ5 tPHL 2.6 μs
Propagation L to H VCE = 0.4 V, RL = 1 k, VCC = 5 V,
VTH = 1.5 V
ILD1 tPLH 8.6 μs
ILQ1 tPLH 8.6 μs
ILD2 tPLH 7.4 μs
ILQ2 tPLH 7.4 μs
ILD5 tPLH 7.2 μs
ILQ5 tPLH 7.2 μs
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Non-Saturated Switching Schematic
Fig. 4 - Non-Saturated Switching Timing
Fig. 5 - Saturated Switching Schematic
Fig. 6 - Saturated Switching Timing
COMMON MODE TRANSIENT IMMUNITY (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Common mode rejection, output high VCM = 50 VP-P, RL = 1 k IF = 0 mA CMH5000 V/μs
Common mode rejection, output low VCM = 50 VP-P, RL = 1 k IF = 10 mA CML5000 V/μs
Common mode coupling capacitance CCM 0.01 pF
iild1_01
VO
VCC = 5 V
RL= 75 Ω
f = 10 kHz,
DF = 50 %
IF= 10 mA
iild1_02
t
D
t
R
50 %
PHL
t
PLH
t
S
t
F
t
I
F
V
O
iild1_03
V
O
VCC = 5 V
RL
f = 10 KHz,
DF = 50 %
IF= 10 mA
iild1_04
I
F
t
R
V
O
t
D
t
S
t
F
t
PHL
t
PLH
V
TH
= 1.5 V
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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Fig. 7 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 8 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 9 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 10 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 11 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 12 - Collector Emitter Current vs. Temperature and LED
Current
iild1_05
100 10
1 0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
F - Forward Current (mA)
V
F - Forward Voltage (V)
T
A = - 55 °C
T
A = 100 °C
T
A = 25 °C
iild1_06
100
101
0.1
0.0
0.5
1.0
1.5
NCTR (SAT)
NCTR
IF- LED Current (mA)
CTRNF - Normalized CTR Factor
Normalized to:
VCE= 10 V,IF= 10 mA
TA= 25 °C
CTRce(sat)VCE = 0.4 V
iild1_07
10010
1
0.1
0.0
0.5
1.0
1.5
NCTR (SAT)
NCTR
IF- LED Current (mA)
CTRNF - Normalized CTR Factor
Normalized to:
VCE =10V, IF= 10 mA,T
A= 25 °C
T
A= 50 °C
CTRce(sat) VCE = 0.4 V
iild1_08
1001010.1
0.0
0.5
1.0
1.5
I
F
- LED Current (mA)
NCTR(SAT)
NCTR
Normalized to:
VCE = 10 V, IF= 10 mA
TA= 25 °C
CTRce(sat)V
CE = 0.4 V
TA= 70 °C
CTR - Normalized CTR Factor
iild1_10
60503020100
0
5
10
15
20
25
30
35
50 °C
70 °C
85 °C
I
F
- LED Current (mA)
I
CE
- Collector Current (mA)
25 °C
40
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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Fig. 13 - Collector Emitter Leakage Current vs.Temperature Fig. 14 - Propagation Delay vs. Collector Load Resistor
PACKAGE DIMENSIONS in millimeters
iild1_11
100806040200- 20
10
10
10
10
10
10
10
10
- 2
- 1
0
1
2
3
4
5
TA- Ambient Temperature (°C)
ICEO - Collector Emitter (nA)
Vce = 10 V
Typical
iild1_12 RL- Collector Load Resistor (kΩ)
1001010.1
1
10
100
1000
1.0
1.5
2.0
2.5
t
pLH
t
pHL
tpLH - Propagation Low-High (µs)
tpHL - Propagation High-Low (µs)
T
A
= 25 °C, I
F
= 10 mA
V
cc
= 5 V, V
th
= 1.5 V
i178006
Pin one ID
6.645 ± 0.165
9.77 ± 0.14
0.95 ± 0.19
4° typ.
2.54 typ.
10°
3° to 9°
7.62 typ.
0.51 ± 0.05
0.25 ± 0.05
3.045 ± 0.255
3.555 ± 0.255
0.70 ± 0.19
6.095 ± 0.255
4321
0.79
1.27
567 8 ISO method A
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING (example)
Notes
• Only option 1 and 7 reflected in the package marking.
• The VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
i178007
6.48
6.81
19.77
20.07
0.76
1.14
4°
2.54 typ.
10°
typ.
3° to 9°
0.46
0.56 0.20
0.30
2.79
3.30
Pin one ID
3.30
3.81
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
7.62 typ.
5.84
6.35
1.27
ISO method A
0.51
0.89
0.79
18450-9
0.35
0.25
10.16
10.92
7.8
7.4
10.36
9.96
Option 6
8 min.
7.62 typ.
4.6
4.1
8.4 min.
10.3 max.
0.7
Option 7
R 0.010 (0.25)
0.100 (2.54)
0.030 (0.76)
0.070 (1.78)
0.060 (1.52)
0.435 (11.05)
0.315 (8.00) min.
8 min.
0.51
1.02
7.62 ref.
9.53
10.03
0.25 typ.
0.102
0.249
15° max.
Option 9
R 0.010 (0.25)
0.100 (2.54)
0.030 (0.76)
0.070 (1.78)
0.060 (1.52)
0.435 (11.05)
0.315 (8.00) min.
ILD2
V YWW H 68
ILQ2
V YWW H 68
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Revision: 02-Oct-12 1Document Number: 91000
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.