Rugged Power MOSFETs IRFF9220, IRFF9221 i t 8 File Number 228 IRFF9222, IRFF9223 Avalanche-Energy-Rated P-Channel Power MOSFETs -2 A and -2.5 A, -150 V and -200 V TERMINAL DIAGRAM losiom = 1.5 Q and 2.40 o Features: @ Single puise avalanche energy rated a SOA is power-dissipation limited @ Nanosecond switching speeds a Linear transfer characteristics a High input impedance s 92CS-43262 P-CHANNEL ENHANCEMENT MODE The IRFF9220, IRFF9221, IRFF9222, and IRFF9223 are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- TERMINAL DESIGNATION down avalanche mode of operation. These are p-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFF-types are supplied in the JEDEC TO-205AF (Low- Profile TO-39) metal package. SOURCE DRAIN (CASE) JEDEC TO-205AF ABSOLUTE-MAXIMUM RATINGS CHARACTERISTIC (RFFS220 | IRFF9221 | IRFF9222 | IRFF92Z23 UNITS Drain-Source Voltage Vos -200 -180 -200 -150 Vv Drain-Gate Voltage (Res = 20 kN) @ Vocr -200 -150 -200 -150 Vv Continuous Drain Current lo @ Te = 25C -2.5 -2.5 -2 -2 A Pulsed Drain Current @ lm ~10 -10 -8 -8 A Gate-Source Voltage Ves +20 Vv Maximum Power Dissipation Po @ Te = 25C 20 (See Fig. 14) Ww Linear Derating Factor 0.16 (See Fig. 14) wre Single-Pulse Avalanche Energy Rating @ Eas 290 mJ Operating Junction and Ty on Storage Temperature Range Taig 758 to +150 Cc Lead Temperature 300 (0.063 in. [1.6 mm] from case for 10s) C 6-421Rugged Power MOSFETs IRFF9220, IRFF9221 IRFF9222, IRFF9223 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified CHARACTERISTIC TYPE MIN. | TYP. | MAX. [UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVoss_ | IRFF9220; _ _ _ = iRFFQ222 | ~20 V__| Ves=0V IRFF9221 | _ _ aa = IRFF9223 | 19 V__| 10 = 250 uA Gate Threshold Voitage Vesin ALL -2.0 _ ~4.0 Vv Vos = Vas, lo = -250 vA Gate-Source Leakage Forward less ALL _ = -100 nA Ves = -20 V Gate-Source Leakage Reverse Ioss ALL _- 100 nA Ves = 20 V Zero-Gate Voltage Drain Current lpss ALL _ _ -250 vA Vos = Max. Rating, Vas = 0 V = = -1000 uA Vos = Max. Rating x 0.8, Vas = OV, Te = 125C On-State Drain Current @ lbion IRFF9220 -25 - A IRFF9221 Vos > | Kr Ves = -10V IRFF9222 9 A Ds Oton) DSton! max, GS IRFF9223 7 _ = Static Drain-Source On-State fosiom | IRFF9220| 1 15 Q Resistance @ IRFF9221 : Ves = 10V, Ip =1.5A IRFF9222 24 a inFFg223| | 15 - Forward Transconductance @ Ors ALL 1 18 = S(G)_| Vos > lovon X osion max. lo = 1.5 A input Capacitance Cus ALL = 350 = pF = a = Output Capacitance Coss ALL 100 pF Mi re Ms ys 25 V. f= 1.0 MHz Reverse Transfer Capacitance Crs ALL _ 30 _ pF 9. Turn-On Delay Time tation ALL = 15 40 ns Voo = 0.5 BVoss, Ip = -1.5 A, Zo = 509 Rise Time tr ALL 25 50 ns See Fig. 17 Turn-Off Delay Time tovor ALL _ 80 120 ns {MOSFET switching times are essentially Fall Time tr ALL _ 50 75 ns independent of operating temperature.) Total Gate Charge Qy ALL _ 16 22 no | Ves =-18 V, lo = -4 A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Gate-Source Charge Qys ALL 9 135 | nc | essentially independent of operating RA ort temperature.) Gate-Drain (Miller) Charge Qoa ALL 7 10.5 nc : Internal Orain Inductance Lo ALL - 5.0 - nH Measured from the drain | Modified MOSFET lead, 5mm (0.2 in.) symbol showing the o from header to center internal device of die. inductances. internal Source Inductance Ls ALL _ 15.0 - oH Measured from the source lead, 5mm GS (0.2 in.) from header and source bonding pad. $s Junction-to-Case Raic ALL = _ 6.25 | C/W Junction-to-Ambient Resa ALL _ _ 175 | C/AW | Typical socket mount. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current Is IRFF9220 _ _ 25 A Modified MOSFET symbol (Body Diode) IRFF9221 showing the integral 8 IRFF9222 reverse P-N junction rectifier. inFFo223| | ~ | ~@ A Pulse Source Current Isna IRFF9220 _ 10 A Ss (Body Diode) @ IRFF9221 ~~ ~ IRFF9222 inrrog23; | ~ | ~7 | A s Diode Forward Voltage @ Vso IRFF9220 - < = IRFF9221 _ - -1.5 Vv Te = 25C, Is = -2.5 A, Ves = OV IRFF9222 _ _ . = 960 a = IRFF9223 15 Vv Te = 26C, Is = -2 A, Vas = OV Reverse Recovery Time te ALL = 300 = ns T, = 150C, lr = -2.5 A, dle/dt = 100 A/ys Reverse Recovered Charge Qaa ALL = 19 = uc Ty = 150C, Ie = -2.5 A, dis/dt = 100 A/ys . . Intrinsic turn-on time is negligible. Forward Turn-on Time ton ALL Turn-on speed is substantially controiled by Ls + Lo. Ty = 25C to 150C. @ Repetitive Rating: Pulse width limited by @ Voo = 50 V, Starting T, = 25C, L = 69.6 mH, @ Pulse Test: Pulse width = 300 ys, max. junction temperature. See Transient Re = 25 2, Peak h = 2.5 A (See Figs. 15 & 16). Duty Cycle = 2%. Thermal Impedance Curve (Fig. 5). 6-422Rugged Power MOSFETs IRFF9220, IRFF9221 IRFF9222, IRFF9223 80 uc PULSE Vos >'otan) * Rostan)max. Tye 80. PULSE TEST Ty= Ty tg, GRAIN CURRENT (AMPERES) Ip. DRAIN CURRENT (AMPERES) oO -1 +20 HN AG -0 0 -2 4 6 38 -10 Vos. DRAIN-TO-SGURCE VOLTAGE (VOLTS) gs. GATE-TO-SOURCE VOLTAGE {VOLTS} Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. g g c x = z = g* c & -0s o 9 = z = & -02 o a 2 S -01 -0.02 -10 -2 -5 -10 -20 -80 -100-200 -500 0 A 2 3 4 5 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92GS-44207 Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum sale operating area. bE z z a =z 4 Z. rE $3 5= os oy ee oo s2 ao ga Sy ' < =o eal I> p f 2 = 0.08 2 3s 1. DUTY FACTOR, Oo 1 2z . . @ en S 0.02 SINGLE PULSE (TRANSIENT 2. PER UNIT BASE = Ringe * 6.25 DEG. CW = 3 on: THERMAL IMPEDANCE) 3. Tym - To = Pom Zinc To to5 2 5 4 2 5 93 2 5 we 2 5 wl 2 5 to 2 5 a ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 6-423Rugged Power MOSFETs IRFF9220, IRFF9221 IRFF9222, IRFF9223 M5 TRANSCONOUCTANCE (SIEMENS) Fig. 6 - Typical transconductance vs. drain current. BVags, DRAIN.TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) C, CAPACITANCE (pF) Fig. 10 - Typical capacitance vs. drain-to-source voltage. 6-424 125 a 2 a o wo ow 2 o on O75 -40 us PULSE 1 U Vos "toni * Roston) max 4 2 3 A Ip. DRAIN CURRENT (AMPERES) 0 40 80 120 Ty, JUNCTION TEMPERATURE (9C) Fig. 8 - Breakdown voltage vs. temperature. Ciss figs = Cos + Cog. Cas Crs = fgg Cys Cg : ao Sl Coss = Cas + tgs + Cgg = Cas * Coa 10 -20 -30 -40 Vgs. ORAIN.TO-SOURCE VOLTAGE (VOLTS) 160 -50 NEGATIVE Inq, REVERSE DRAIN CURRENT - 100 (AMPERES) - 0.1 -0.4 -0.6 -0.8 -1.0 -12 +14 -16 -1.8 NEGATIVE Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 92GS-44169 Fig. 7 - Typical source-drain diode forward voltage. (NORMALIZEQ) in o Vgs = -10 i) 1 = +158 Os Ros(on). ORAIN-TO-SOURCE ON RESISTANCE 0 -40 o 40 a0 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 - Normalized on-resistance vs. temperature. Ips 4a FOR TEST CIRCUIT SEE FIGURE 18 Vos > -100V, IRFF9220, 9222 Vgs. GATE TO SOURCE VOLTAGE (VOLTS) ' 1 Vos: 60V 1 Vos < -40v a 4 a 12 16 20 Qy. TOTAL GATE CHARGE (nC) Fig. 11 - Typical gate charge vs. gate-to-source voltage.Rugged Power MOSFETs IRFF9220, IRFF9221 IRFF9222, IRFF9223 Rostonj MEASURED WITH CURRENT PULSE OF 2.045 URATION. INITIAL Ty = 25C. (HEATING J EFFECT OF 2.0 us PULSE IS MINIMAL} | | Vgg =-10V a = x Ss w 3 = = 3 e ce a wi 2 | = 3 < z / IRFF9222, 9223 = i = = 2 B2 J z 2 < z | 5 Vgs --20 2 o = & | 3 0 0 4 8 2 16 20 2 50 15 100 125 150 Ip. DRAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (CI Fig. 12 - Typical on-resistance vs. drain current. Fig. 13 - Maximum drain current vs. case temperature. Lat GS pol VARY tp TO OBTAIN REQUIRED PEAK i, a 9205-43278 Fig. 15 - Unclamped inductive test circuit. Pp, POWER DISSIPATION (WATTS) Ss ow 0 20 40 60 80100120140 Tg, CASE TEMPERATURE (C) tp BYpss Fig. 14 - Power vs. temperature derating curve. 9208-43279 Fig. 16 - Unclamped inductive waveforms. CURRENT ~Vos _ REGULATOR O {isotaTEO SUPPLY) Ro = SAME TYPE parrery { 0-2ur= soKas AS DUT out Eos D tp Re I+ put i 4 of Veg =-10 l faisma 8 FT ~WA-O +Vog T ja 'o SAMPLI VARY tp TO OBTAIN REQUIRED PEAK ty RESISTOR = RESISTOR 9205-43260 9208-49281 Fig. 17 - Switching time test circuit. Fig. 18 - Gate charge test circuit. 6-425