RF Transistors RF TRANSISTOR SELECTOR GUIDES SMALL-SIGNAL TRANSISTORS (Listed in order of operating test frequency and power gain) Min Gpe (dB) f Min Pout (mW)* Type Material Polarity MHz Typ Conversion Gain (dB)f 2N3324 Ge P 10 24 2N2273 Ge P 30 10 2N741, A Ge P 30 16 2N2929 Ge P 60 26 2N700 Ge P 70 20 2N700A Ge P 70 22 2N3323 Ge P 100 11 2N707, A Si N 100 200* 2N1562 Ge P 160 5,0 2N1693 Ge P 160 5.0 2N1561 Ge P 160 6.0 2N1692 Ge P 160 6.0 MM1941 si N 175 7.0 2N4072, 3 Si N 175 10 2N3286 Ge P 200 14 2N3294 Si N 200 14 2N918 Si N 200 15 2N2708 Si N 200 15 2N3281 Ge P 200 16 2N3282 Ge P 200 16 2N3283 Ge P 200 16 2N3284 Ge P 200 16 2N3291, 2 Si N 200 16 2N3127 Ge P 200 17 2N3279, 80 Ge P 200 17 2N3287 thru 90 Si N 200 17 2N3307, 8 Si P 200 17 2N3785 Ge Pp 200 18 2N3783, 4 Ge P 200 20 MM5002 Ge P 200 20 MM5001 Ge P 200 22 MM5000 Ge P 200 24 2N3137 Si N 250 6.0 MM1803 Si N 250 7.5 2N2857 Si N 450 12.5 2N3839 Si N 450 12.5 2N4959 Si P 450 15 2N4958 Si P 450 16 2N4957 Si P 450 17 2N1141, 2, 3 Ge P 500 10 typ 2N1195 Ge P 500 10 typ AF239 Ge P 800 11.2G 2N3544 Si N 1000 10* MM1501 Si N 1500 150* MM1500 Si N 1500 250* MM380 Ge P 1500 fax MM1139 Ge P 108 to 10.7 227 9-6 RF Transistors mm 5000 (cermanium) Veco = 15 V Ic =10mA mm5001 Pp = 150 mW mm5002 PNP germanium high frequency transistors designed for use in low-noise, high-gain VHF / UHF amplifiers. CASE 20 Active Elements Isolated From Case (TO-72) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Voro 15 Vde Collector-Base Voltage Voz 30 Vde Emitter-Base Voltage Ves 0.3 Vde Collector Current To 10 mAdc Total Device Dissipation @ Ty = 25C Py 150 mW Derate above 25C 2.0 mw/C Operating & Storage Junction Ty T st c Temperature 8 -65 to +100 SHIELD T cN 0.7-9 pF* 0. 7-9 pF INPUT } R= 502 Ss 470 pF T 0.001 uF TE occ FIGURE 1 TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE NOTES: L 1/4in. ID, 1/2 in. long, 4 turns #20 solid copper wire, center tapped. T 1/4 in. ID, close wound, 3 turns #26 solid copper wire, 1:1 ratio bi-filler wound. * High Quality piston type capacitor. Distance from emitter of transistor to ground side of bypass capacitor should be kept minimal. 9-134 - RF Transistors MMS5000, MM5001, MM5002 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) [ Characteristics [ Symbol | Min | Typ | Max | Units | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVoEO Vde (Ig = 2.0 mAde, 1, = 0) Collector-Base Breakdown Voltage BV ono Vde Me = 100 wAde, Ib = 0) 30 - - ON CHARACTERISTICS DC Current Gain h - (ig = 3-0 mAde, Vag = 12 Ve) FE 30 - - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product f, MHz (lg = 3,0 mAdc, Vor = 12 Vde, f = 100 MHz) 800 - - Collector-Base Capacitance Cc pF (Veg = 12 Vde, I, = 0, f = 100 kHz) - 0.4 0.6 Collector-Base Time Constant ric ps (h, = 3.0 mAdc, Von = 12 Vdc, f = 31.8 MHz) MM5000 - - 3. MM5001 - - 5.0 MM5002 - - qT. Noise Figure (Figure 1) NF aB (Ig = 3.0 mAdc, Vor = 12 Vdc, Ry = 50 ohms, f = 200 MHz) MM5000 - - 1.6 MMS5001 - - MM5002 - - 2.2 Noise Figure NF aB (Ig = 3.0 mAdc, V,, = 12 Vde, Ry = 50 ohms, f = 450 MHz) - 3.5 - FUNCTIONAL TEST Common-Emitter Amplifier Power Gain G e 4B Ug = 3.0 mAdc, Vor = 12 Vdc, f = 200 MHz) m (Figure 1) MM5000 24 -+ - MM5001 22 - - MM5002 20 - - a wa N Common-Emitter Amplifier Power Gain G e aB (I, = 3.0 mAde, V/, = 12 Vde, f = 450 MHz) Ps - 16 . 9-135