NCV8170 LDO Regulator UltraLow IQ, CMOS 150 mA The NCV8170 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current. The ultra-low consumption of typ. 500 nA ensures long battery life and dynamic transient boost feature improves device transient response for wireless communication applications. The device is available in small 1 x 1 mm xDFN4 and SOT-563 packages. Features * * * * * * * * * * * Operating Input Voltage Range: 2.2 V to 5.5 V Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps) Ultra-Low Quiescent Current Typ. 0.5 mA Low Dropout: 170 mV Typ. at 150 mA High Output Voltage Accuracy 1% Stable with Ceramic Capacitors 1 mF Over-Current Protection Thermal Shutdown Protection NCV8170A for Active Discharge Option Available in Small 1 x 1 mm xDFN4 and SOT-563 Packages These are Pb-Free Devices Typical Applications CIN IN 1 mF 6 1 1 SOT-563 XV SUFFIX CASE 463A XDFN4 MX SUFFIX CASE 711AJ MARKING DIAGRAMS XDFN4 XX M 1 XX = Specific Device Code M = Date Code SOT-563 XX MG 1 * Battery Powered Equipments * Portable Communication Equipments * Cameras, Image Sensors and Camcorders VIN www.onsemi.com NCV8170 XX = Specific Device Code M = Month Code G = Pb-Free Package VOUT OUT COUT EN ORDERING INFORMATION See detailed ordering, marking and shipping information on page 19 of this data sheet. 1 mF GND Figure 1. Typical Application Schematic (c) Semiconductor Components Industries, LLC, 2015 September, 2019 - Rev. 5 1 Publication Order Number: NCV8170/D NCV8170 PIN FUNCTION DESCRIPTION Pin No. XDFN4 Pin No. SOT-563 Pin Name 4 1 IN 2 2 GND 3 6 EN 1 3 OUT Output Pin EPAD Internally Connected to GND EPAD Description Power Supply Input Voltage Power Supply Ground Chip Enable Pin (Active "H") 4 NC No Connect 5 GND Power Supply Ground ABSOLUTE MAXIMUM RATINGS Symbol VIN Rating Input Voltage (Note 1) VOUT Output Voltage VCE Chip Enable Input TJ(MAX) TSTG Maximum Junction Temperature Storage Temperature Value Unit 6.0 V -0.3 to VIN + 0.3 V -0.3 to 6.0 V 125 C -55 to 150 C ESDHBM ESD Capability, Human Body Model (Note 2) 2000 V ESDMM ESD Capability, Machine Model (Note 2) 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114) ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78 THERMAL CHARACTERISTICS Symbol RqJA Rating Value Thermal Characteristics, Thermal Resistance, Junction-to-Air XDFN4 1 x 1 mm SOT-563 Figure 2. Simplified Block Diagram www.onsemi.com 2 250 200 Unit C/W NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 1.2 V (-40C TJ 125C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 3) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 1.188 1.2 1.212 V -40C TJ 125C 1.176 1.2 1.224 Operating Input Voltage Output Voltage LineReg Line Regulation 2.5 V < VIN 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 2.5 V - 0.05 0.20 %/V -20 1 20 mV VDO Dropout Voltage (Note 4) - - - mV IOUT Output Current (Note 5) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 225 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pin Current VEN VIN 5.5 V (Note 6) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.2 V + 200 mVpp Modulation IOUT = 150 mA IOUT = 10 mA - - 57 63 - - VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA, f = 100 Hz to 1 MHz, COUT = 1 mF - 85 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 6) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 6) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 6) - 25 - C IEN RLOW dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 4. Not Characterized at VIN = 2.2 V, VOUT = 1.2 V, IOUT = 150 mA. 5. Respect SOA. 6. Guaranteed by design and characterization. www.onsemi.com 3 NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 1.5 V (-40C TJ 125C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 7) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 1.485 1.5 1.515 V -40C TJ 125C 1.470 1.5 1.530 Operating Input Voltage Output Voltage LineReg Line Regulation 4.3 V < VIN 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 4.3 V - 0.05 0.20 %/V -20 - 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 8) - - - mV IOUT Output Current (Note 9) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 225 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pin Current VEN VIN 5.5 V (Note 10) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.5 V + 200 mVpp Modulation IOUT = 150 mA - 57 - VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA, f = 100 Hz to 1 MHz, COUT = 1 mF - 90 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 10) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 10) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 10) - 25 - C IEN RLOW dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 8. Not Characterized at VIN = 2.2 V, VOUT = 1.5 V, IOUT = 150 mA. 9. Respect SOA. 10. Guaranteed by design and characterization. www.onsemi.com 4 NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 1.8 V (-40C TJ 125C; VIN = 2.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 11) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 1.782 1.8 1.818 V -40C TJ 125C 1.764 1.8 1.836 Operating Input Voltage Output Voltage LineReg Line Regulation 2.8 V < VIN 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 2.8 V - 0.05 0.20 %/V -20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 12) - 350 500 mV IOUT Output Current (Note 13) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 225 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pull Down Current VEN VIN 5.5 V (Note 14) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.8 V + 200 mVpp Modulation IOUT = 150 mA - 57 - dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF - 95 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 14) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 14) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 14) - 25 - C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 12. Characterized when VOUT falls 54 mV below the regulated voltage and only for devices with VOUT = 1.8 V. 13. Respect SOA. 14. Guaranteed by design and characterization. www.onsemi.com 5 NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 2.5 V (-40C TJ 125C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 15) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 2.475 2.5 2.525 V -40C TJ 125C 2.450 2.5 2.550 Operating Input Voltage Output Voltage LineReg Line Regulation 3.5 V < VIN 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 3.5 V - 0.05 0.20 %/V -20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 16) - 240 350 mV IOUT Output Current (Note 17) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 225 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pull Down Current VEN VIN 5.5 V (Note 18) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.5 V + 200 mVpp Modulation IOUT = 150 mA - 57 - dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF - 125 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 18) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 18) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 18) - 25 - C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 15. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 16. Characterized when VOUT falls 75 mV below the regulated voltage and only for devices with VOUT = 2.5 V. 17. Respect SOA. 18. Guaranteed by design and characterization. www.onsemi.com 6 NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 2.8 V (-40C TJ 125C; VIN = 3.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 19) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 2.772 2.8 2.828 V -40C TJ 125C 2.744 2.8 2.856 Operating Input Voltage Output Voltage LineReg Line Regulation 3.8 V < VIN 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 3.8 V - 0.05 0.20 %/V -20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 20) - 210 315 mV IOUT Output Current (Note 21) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 195 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pull Down Current VEN VIN 5.5 V (Note 22) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.8 V + 200 mVpp Modulation IOUT = 150 mA - 40 - dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF - 125 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 22) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 22) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 22) - 25 - C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 19. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. Characterized when VOUT falls 84 mV below the regulated voltage and only for devices with VOUT = 2.8 V. 21. Respect SOA. 22. Guaranteed by design and characterization. www.onsemi.com 7 NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 3.0 V (-40C TJ 125C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 23) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 2.97 3.0 3.03 V -40C TJ 125C 2.94 3.0 3.06 Operating Input Voltage Output Voltage LineReg Line Regulation 4.0 V < VIN 5.5 V, IOUT = 1 mA - 0.05 0.20 %/V LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 4 V -20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 24) - 190 260 mV IOUT Output Current (Note 25) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 195 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pull Down Current VEN VIN 5.5 V (Note 26) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.0 V + 200 mVpp Modulation IOUT = 150 mA - 47 - dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF - 120 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 26) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 26) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 26) - 25 - C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 23. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V. 25. Respect SOA. 26. Guaranteed by design and characterization. www.onsemi.com 8 NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 3.3 V (-40C TJ 125C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 27) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 3.267 3.3 3.333 V -40C TJ 125C 3.234 3.3 3.366 Operating Input Voltage Output Voltage LineReg Line Regulation 4.3 V < VIN 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 4.3 V - 0.05 0.20 %/V -20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 28) - 180 250 mV IOUT Output Current (Note 29) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 195 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pull Down Current VEN VIN 5.5 V (Note 30) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.3 V + 200 mVpp Modulation IOUT = 150 mA - 41 - dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF - 125 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 30) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 30) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 30) - 25 - C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 27. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V. 29. Respect SOA. 30. Guaranteed by design and characterization. www.onsemi.com 9 NCV8170 ELECTRICAL CHARACTERISTICS - VOLTAGE VERSION 3.6 V (-40C TJ 125C; VIN = 4.6 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25C.) (Note 31) Symbol Parameter VIN Test Conditions Min Typ Max Unit 2.2 - 5.5 V TA = +25C 3.564 3.6 3.636 V -40C TJ 125C 3.528 3.6 3.672 Operating Input Voltage VOUT Output Voltage LineReg Line Regulation 4.6 V < VIN 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT 150 mA, VIN = 4.6 V - 0.05 0.20 %/V -20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 32) - 170 240 mV IOUT Output Current (Note 33) 150 - - mA ISC Short Circuit Current Limit VOUT = 0 V - 195 - mA IQ Quiescent Current IOUT = 0 mA - 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25C - 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage "H" 1.2 - - V VENL EN Pin Threshold Voltage EN Input Voltage "L" - - 0.4 V EN Pull Down Current VEN VIN 5.5 V (Note 34) - 10 - nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.6 V + 200 mVpp Modulation IOUT = 150 mA - 30 - dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF - 130 - mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 34) - 100 - W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25C (Note 34) - 175 - C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 34) - 25 - C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 31. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. Characterized when VOUT falls 108 mV below the regulated voltage and only for devices with VOUT = 3.6 V. 33. Respect SOA. 34. Guaranteed by design and characterization. TYPICAL CHARACTERISTICS 1.202 1.802 OUTPUT VOLTAGE (V) Vin = 5.5 V 1.198 Vin = 3.0 V Vin = 2.2 V 1.196 1.194 NCV8170xxx120TyG Cin = Cout = 1 mF Iout = 1 mA 1.192 1.190 -40 -20 0 20 40 60 80 100 1.800 OUTPUT VOLTAGE (V) 1.200 Vin = 5.5 V 1.798 Vin = 2.8 V 1.796 Vin = 3.5 V 1.794 NCV8170xxx180TyG Cin = Cout = 1 mF Iout = 1 mA 1.792 1.790 -40 -20 120 0 20 40 60 80 100 TEMPERATURE (C) TEMPERATURE (C) Figure 3. Output Voltage vs. Temperature, Vout = 1.2 V Figure 4. Output Voltage vs. Temperature, Vout = 1.8 V www.onsemi.com 10 120 NCV8170 TYPICAL CHARACTERISTICS 3.008 3.604 3.600 Vin = 5.5 V 3.000 2.996 Vin = 5.0 V Vin = 3.3 - 4.5 V 2.992 NCV8170xxx300TyG Cin = Cout = 1 mF Iout = 1 mA 2.988 2.984 -40 -20 0 20 40 80 60 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 3.004 NCV8170xxx360TyG Cin = Cout = 1 mF Iout = 1 mA -20 0 20 40 60 100 80 TEMPERATURE (C) Figure 5. Output Voltage vs. Temperature, Vout = 3.0 V Figure 6. Output Voltage vs. Temperature, Vout = 3.6 V 120 1.802 1.800 Vin = 3.0 V 1.197 Vin = 4.0 V 1.196 NCV8170xxx120TyG Cin = Cout = 1 mF TA = 25C 1.195 0 20 40 60 Vin = 5.5 V 80 100 120 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) Vin = 2.5 V 1.198 Vin = 2.8 V 1.798 Vin = 4.0 V 1.796 Vin = 4.5 V 1.794 NCV8170xxx180TyG Cin = Cout = 1 mF TA = 25C 1.792 1.790 140 0 20 40 60 Vin = 5.5 V 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 7. Output Voltage vs. Output Current, Vout = 1.2 V Figure 8. Output Voltage vs. Output Current, Vout = 1.8 V 3.002 3.599 Vin = 4.0 V 3.000 Vin = 4.5 V 2.999 Vin = 5.0 V 2.998 NCV8170xxx300TyG Cin = Cout = 1 mF TA = 25C 2.997 0 20 40 60 3.598 OUTPUT VOLTAGE (V) 3.001 OUTPUT VOLTAGE (V) Vin = 3.8 - 4.5 V TEMPERATURE (C) 1.199 2.996 Vin = 5.0 V 3.588 3.580 -40 1.200 1.194 3.592 3.584 120 100 Vin = 5.5 V 3.596 3.597 Vin = 4.3 V 3.596 Vin = 4.6 V 3.595 NCV8170xxx360TyG Cin = Cout = 1 mF TA = 25C 3.594 Vin = 5.5 V 80 100 120 3.593 140 0 20 40 60 Vin = 5.0 V Vin = 5.5 V 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 9. Output Voltage vs. Output Current, Vout = 3.0 V Figure 10. Output Voltage vs. Output Current, Vout = 3.6 V www.onsemi.com 11 NCV8170 TYPICAL CHARACTERISTICS 350 NCV8170xxx180TyG Cin = Cout = 1 mF 400 TA = 125C TA = 25C 300 TA = -40C 200 100 0 0 20 40 60 80 100 120 DROPOUT VOLTAGE (mV) DROPOUT VOLTAGE (mV) 500 150 TA = -40C 100 50 0 20 40 60 80 100 120 140 Figure 11. Dropout Voltage vs. Output Current, Vout = 1.8 V Figure 12. Dropout Voltage vs. Output Current, Vout = 2.5 V NCV8170xxx300TyG Cin = Cout = 1 mF 250 TA = 125C TA = 25C 200 150 TA = -40C 100 50 0 20 40 60 80 100 120 DROPOUT VOLTAGE (mV) 250 TA = 125C NCV8170xxx360TyG Cin = Cout = 1 mF 200 TA = 25C 150 100 TA = -40C 50 0 140 0 20 40 60 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 13. Dropout Voltage vs. Output Current, Vout = 3.0 V Figure 14. Dropout Voltage vs. Output Current, Vout = 3.6 V 0.65 NCV8170xxx120TyG Cin = Cout = 1 mF Iout = 0 Vout = 1.2 V 0.60 0.55 0.50 Vin = 2.5 - 4.0 V 0.45 Vin = 5.0 V 0.40 0.35 -40 -20 0 20 40 60 80 100 0.60 0.55 Vin = 3.5 - 4.0 V 0.50 0.45 Vin = 5.0 V 0.40 0.35 -40 120 Vin = 5.5 V NCV8170xxx250TyG Cin = Cout = 1 mF Iout = 0 Vout = 2.5 V Vin = 5.5 V QUIESCENT CURRENT (mA) DROPOUT VOLTAGE (mV) 200 OUTPUT CURRENT (mA) 0.65 QUIESCENT CURRENT (mA) TA = 25C OUTPUT CURRENT (mA) 300 0 TA = 125C 250 0 140 NCV8170xxx250TyG Cin = Cout = 1 mF 300 -20 0 20 40 60 80 100 120 TEMPERATURE (C) TEMPERATURE (C) Figure 15. Quiescent Current vs. Temperature, Vout = 1.2 V Figure 16. Quiescent Current vs. Temperature, Vout = 2.5 V www.onsemi.com 12 NCV8170 TYPICAL CHARACTERISTICS 70 NCV8170xxx360TyG Cin = Cout = 1 mF Iout = 0 Vout = 3.6 V 0.60 0.55 Vin = 5.5 V GROUND CURRENT (mA) QUIESCENT CURRENT (mA) 0.65 Vin = 4.0 V 0.50 0.45 Vin = 5.0 V 0.40 0.35 -40 -20 0 20 40 60 80 100 20 10 0.01 80 NCV8170xxx250TyG Cin = Cout = 1 mF TA = 25C Vout = 2.5 V 0.1 1 NCV8170xxx360TyG Cin = Cout = 1 mF TA = 25C Vout = 3.6 V 70 Vin = 3.5 V Vin = 4.5 V Vin = 5.5 V 30 20 10 100 1000 60 Vin = 4.6 V Vin = 5.0 V 50 Vin = 5.5 V 40 30 20 10 10 0.01 0.1 1 10 100 0 1000 0.01 0.1 1 10 100 1000 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 19. Ground Current vs. Output Current, Vout = 2.5 V Figure 20. Ground Current vs. Output Current, Vout = 3.6 V 80 80 70 70 Iout = 1 mA Iout = 1 mA 60 60 10 mA 100 mA PSRR (dB) PSRR (dB) 30 Figure 18. Ground Current vs. Output Current, Vout = 1.2 V 40 50 Vin = 5.5 V 40 Figure 17. Quiescent Current vs. Temperature, Vout = 3.6 V 50 0 Vin = 3.5 V OUTPUT CURRENT (mA) GROUND CURRENT (mA) GROUND CURRENT (mA) 60 Vin = 2.5 V TEMPERATURE (C) 80 70 50 0 120 NCV8170xxx120TyG Cin = Cout = 1 mF TA = 25C Vout = 1.2 V 60 40 30 NCV8170xxx120TyG 20 Cout = 1 mF Vin = 2.2 V+ 200 mVpp modulation 10 TA = 25C Vout = 1.2 V 0 100 1k 10k 150 mA 100k 1M 50 10 mA 100 mA 40 30 NCV8170xxx180TyG 20 Cout = 1 mF Vin = 2.8 V+ 200 mVpp modulation 10 TA = 25C Vout = 1.8 V 0 100 1k 10k 150 mA 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 21. PSRR vs. Frequency, Vout = 1.2 V Figure 22. PSRR vs. Frequency, Vout = 1.8 V www.onsemi.com 13 1M NCV8170 TYPICAL CHARACTERISTICS 70 70 Iout = 1 mA 60 60 PSRR (dB) 50 40 30 NCV8170xxx300TyG Cout = 1 mF Vin = 4.0 V+ 200 mVpp modulation TA = 25C Vout = 3.0 V 10 100 1k 10k OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/Hz) 100k 1M 30 NCV8170xxx360TyG 20 Cout = 1 mF Vin = 4.6 V+ 200 mVpp modulation 10 TA = 25C Vout = 3.6 V 0 100 1k 10k 150 mA 100k Figure 23. PSRR vs. Frequency, Vout = 3.0 V Figure 24. PSRR vs. Frequency, Vout = 3.6 V 2.0 NCV8170xxx120TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 1.2 V Iout = 1 mA TA = 25C 1.0 0.8 0.6 0.4 0.2 10 100 1k 10k 100k 1M 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 100 1k 10k 100k Figure 25. Output Voltage Noise Spectral Density, Vout = 1.2 V Figure 26. Output Voltage Noise Spectral Density, Vout = 1.8 V 3.0 2.5 2.0 4.0 1.5 1.0 0.5 10 1.6 FREQUENCY (Hz) NCV8170xxx300TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 3.0 V Iout = 1 mA TA = 25C 100 1k 10k 100k 1M 1M NCV8170xxx360TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 3.6 V Iout = 1 mA TA = 25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 27. Output Voltage Noise Spectral Density, Vout = 3.0 V Figure 28. Output Voltage Noise Spectral Density, Vout = 3.6 V www.onsemi.com 14 1M NCV8170xxx180TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 1.8 V Iout = 1 mA TA = 25C 1.8 FREQUENCY (Hz) 3.5 0 40 FREQUENCY (Hz) 1.2 0 10 mA 100 mA FREQUENCY (Hz) 1.4 OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/Hz) 150 mA OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/Hz) 20 OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/Hz) PSRR (dB) 10 mA 100 mA 50 0 Iout = 1 mA 1M NCV8170 TYPICAL CHARACTERISTICS Figure 29. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 1.2 V Figure 30. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 1.2 V Figure 31. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 2.5 V Figure 32. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 2.5 V Figure 33. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 3.0 V Figure 34. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 3.0 V www.onsemi.com 15 NCV8170 TYPICAL CHARACTERISTICS Figure 35. Load Transient Response at Load Step from 1mA to 50 mA, Vout= 3.6 V Figure 36. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 3.6 V Figure 37. Output Voltage With and Without Active Discharge Feature, Vout = 1.2 V Figure 38. Output Voltage With and Without Active Discharge Feature, Vout = 2.5 V Figure 39. Output Voltage With and Without Active Discharge Feature, Vout = 3.0 V Figure 40. Output Voltage With and Without Active Discharge Feature, Vout = 3.6 V www.onsemi.com 16 NCV8170 TYPICAL CHARACTERISTICS Figure 41. Enable Turn-on Response at Vout = 1.2 V Figure 42. Enable Turn-on Response at Vout = 2.5 V Figure 43. Enable Turn-on Response at Vout = 3.6 V www.onsemi.com 17 NCV8170 APPLICATIONS INFORMATION General circuitry is switched off and the desired output voltage is available at output pin. In case the Enable function is not required the EN pin should be connected directly to input pin. The NCV8170 is a high performance 150 mA Linear Regulator with Ultra Low IQ. This device delivers low Noise and high Power Supply Rejection Ratio with excellent dynamic performance due to employing the Dynamic Quiescent Current adjustment which assure ultra low IQ consumption at no - load state. These parameters make this device very suitable for various battery powered applications. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown point (TSD = 175C typical) the device goes to disabled state and the output voltage is not delivered until the die temperature decreases to 150C. The Thermal Shutdown feature provides a protection from a catastrophic device failure at accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Input Decoupling (CIN) It is recommended to connect at least a 1 mF Ceramic X5R or X7R capacitor between IN and GND pins of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. Power Dissipation and Heat sinking The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCV8170 device can handle is given by: Output Decoupling (COUT) The NCV8170 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 1.0 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. There is recommended connect the output capacitor as close as possible to the output pin of the regulator. P D(MAX) + TJ(MAX) * TA R qJA (eq. 1) The power dissipated by the NCV8170 device for given application conditions can be calculated from the following equations: P D [ V INI GND(I OUT) ) I OUTV IN * V OUT (eq. 2) or Enable Operation The NCV8170 uses the EN pin to enable /disable its device and to activate /deactivate the active discharge function at devices with this feature. If the EN pin voltage is pulled below 0.4 V the device is guaranteed to be disable. The active discharge transistor at the devices with Active Discharge Feature is activated and the output voltage VOUT is pulled to GND through an internal circuitry with effective resistance about 100 ohms. If the EN pin voltage is higher than 1.2 V the device is guaranteed to be enabled. The internal active discharge V IN(MAX) [ P D(MAX) ) V OUT I OUT ) I GND I OUT (eq. 3) Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV8170, and make traces as short as possible. www.onsemi.com 18 NCV8170 ORDERING INFORMATION Device Nominal Output Voltage Marking NCV8170AMX120TCG 1.2 CC NCV8170AMX150TCG 1.5 CJ NCV8170AMX180TCG 1.8 CD NCV8170AMX250TCG 2.5 CE NCV8170AMX280TCG 2.8 CF NCV8170AMX300TCG 3.0 CA NCV8170AMX310TCG 3.1 CN NCV8170AMX330TCG 3.3 CG NCV8170AMX360TCG 3.6 CM NCV8170BMX120TCG 1.2 3C NCV8170BMX150TCG 1.5 3J NCV8170BMX180TCG 1.8 3D NCV8170BMX250TCG 2.5 3E NCV8170BMX280TCG 2.8 3F NCV8170BMX300TCG 3.0 3A NCV8170BMX310TCG 3.1 3Y NCV8170BMX330TCG 3.3 3G NCV8170BMX360TCG 3.6 3M NCV8170AXV120T2G 1.2 CC NCV8170AXV150T2G 1.5 CJ NCV8170AXV180T2G 1.8 CD NCV8170AXV250T2G 2.5 CE NCV8170AXV280T2G 2.8 CF NCV8170AXV300T2G 3.0 CA NCV8170AXV310T2G 3.1 CN NCV8170AXV330T2G 3.3 CG NCV8170AXV360T2G 3.6 CM NCV8170BXV120T2G 1.2 3C NCV8170BXV150T2G 1.5 3J NCV8170BXV180T2G 1.8 3D NCV8170BXV250T2G 2.5 3E NCV8170BXV280T2G 2.8 3F NCV8170BXV300T2G 3.0 3A NCV8170BXV310T2G 3.1 3Y NCV8170BXV330T2G 3.3 3G NCV8170BXV360T2G 3.6 3N Active Discharge Package Shipping XDFN4 1.0 x 1.0 (Pb-Free) 3000 / Tape & Reel SOT - 563 (Pb-Free) 4000 / Tape & Reel Yes No Yes No For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 19 NCV8170 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A ISSUE F D -X- 5 6 1 e 2 A 4 L E -Y- 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 20 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 NCV8170 PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P MX SUFFIX CASE 711AJ ISSUE O PIN ONE REFERENCE 2X 0.05 C 4X A B D EE EE E 4X L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. b2 DETAIL A DIM A A1 A3 b b2 D D2 E e L L2 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A e/2 1 4X 2 D2 45 5 C SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT* L b 0.05 BOTTOM VIEW 0.52 PACKAGE OUTLINE 3 4X 2X 0.65 PITCH D2 4 MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 4X M 4X 0.39 0.11 C A B 1.20 NOTE 3 4X 4X 0.24 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 21 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8170/D