NCV8170AXV120T2G - APTINA IMAGING

September, 2019 − Rev. 5

1Publication Order Number:

NCV8170/D

NCV8170

LDO Regulator -

Ultra‐Low IQ, CMOS

150 mA

The NCV8170 series of CMOS low dropout regulators are designed

specifically for portable battery-powered applications which require

ultra-low quiescent current. The ultra-low consumption of typ. 500 nA

ensures long battery life and dynamic transient boost feature improves

device transient response for wireless communication applications.

The device is available in small 1 ×1 mm xDFN4 and SOT−563

packages.

Features

•Operating Input Voltage Range: 2.2 V to 5.5 V

•Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps)

•Ultra-Low Quiescent Current Typ. 0.5 mA

•Low Dropout: 170 mV Typ. at 150 mA

•High Output Voltage Accuracy ±1%

•Stable with Ceramic Capacitors 1 mF

•Over-Current Protection

•Thermal Shutdown Protection

•NCV8170A for Active Discharge Option

•Available in Small 1 ×1 mm xDFN4 and SOT−563 Packages

•These are Pb-Free Devices

Typical Applications

•Battery Powered Equipments

•Portable Communication Equipments

•Cameras, Image Sensors and Camcorders

Figure 1. Typical Application Schematic

NCV8170

OUT

VIN VOUT

1 mF1 mF

COUT

CIN

GND

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XDFN4

MX SUFFIX

CASE 711AJ

MARKING DIAGRAMS

See detailed ordering, marking and shipping information on

page 19 of this data sheet.

ORDERING INFORMATION

XX = Specific Device Code

M = Date Code

XX M

XDFN4

XX = Specific Device Code

M = Month Code

G= Pb−Free Package

XX MG

SOT−563

XV SUFFIX

CASE 463A

NCV8170

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PIN FUNCTION DESCRIPTION

Pin No.

XDFN4

Pin No.

SOT−563 Pin Name Description

4 1 IN Power Supply Input Voltage

2 2 GND Power Supply Ground

3 6 EN Chip Enable Pin (Active “H”)

1 3 OUT Output Pin

EPAD EPAD Internally Connected to GND

4 NC No Connect

5 GND Power Supply Ground

ABSOLUTE MAXIMUM RATINGS

Symbol Rating Value Unit

VIN Input Voltage (Note 1) 6.0 V

VOUT Output Voltage −0.3 to VIN + 0.3 V

VCE Chip Enable Input −0.3 to 6.0 V

TJ(MAX) Maximum Junction Temperature 125 °C

TSTG Storage Temperature −55 to 150 °C

ESDHBM ESD Capability, Human Body Model (Note 2) 2000 V

ESDMM ESD Capability, Machine Model (Note 2) 200 V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114)

ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115)

Latchup Current Maximum Rating tested per JEDEC standard: JESD78

THERMAL CHARACTERISTICS

Symbol Rating Value Unit

RqJA Thermal Characteristics, Thermal Resistance, Junction-to-Air

XDFN4 1 ×1mm

SOT−563

250

200

°C/W

Figure 2. Simplified Block Diagram

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.2 V

(−40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 3)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 1.188 1.2 1.212 V

−40°C ≤ TJ ≤ 125°C 1.176 1.2 1.224

LineReg Line Regulation 2.5 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 2.5 V −20 1 20 mV

VDO Dropout Voltage (Note 4) − − − mV

IOUT Output Current (Note 5) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −225 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pin Current VEN ≤ VIN ≤ 5.5 V (Note 6) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.2 V + 200 mVpp Modulation

IOUT = 150 mA

IOUT = 10 mA

−

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA,

f = 100 Hz to 1 MHz, COUT = 1 mF

−85 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 6) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 6)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 6) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

4. Not Characterized at VIN = 2.2 V, VOUT = 1.2 V, IOUT = 150 mA.

5. Respect SOA.

6. Guaranteed by design and characterization.

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.5 V

(−40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 7)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 1.485 1.5 1.515 V

−40°C ≤ TJ ≤ 125°C 1.470 1.5 1.530

LineReg Line Regulation 4.3 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.3 V −20 −20 mV

VDO Dropout Voltage IOUT = 150 mA (Note 8) − − − mV

IOUT Output Current (Note 9) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −225 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pin Current VEN ≤ VIN ≤ 5.5 V (Note 10) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.5 V + 200 mVpp Modulation

IOUT = 150 mA −57 −

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA,

f = 100 Hz to 1 MHz, COUT = 1 mF

−90 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 10) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 10)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 10) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

8. Not Characterized at VIN = 2.2 V, VOUT = 1.5 V, IOUT = 150 mA.

9. Respect SOA.

10.Guaranteed by design and characterization.

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.8 V

(−40°C ≤ TJ ≤ 125°C; VIN = 2.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 11)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 1.782 1.8 1.818 V

−40°C ≤ TJ ≤ 125°C 1.764 1.8 1.836

LineReg Line Regulation 2.8 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 2.8 V −20 1 20 mV

VDO Dropout Voltage IOUT = 150 mA (Note 12) −350 500 mV

IOUT Output Current (Note 13) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −225 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 14) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.8 V + 200 mVpp Modulation

IOUT = 150 mA

−57 −dB

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA

f = 100 Hz to 1 MHz, COUT = 1 mF

−95 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 14) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 14)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 14) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

12.Characterized when VOUT falls 54 mV below the regulated voltage and only for devices with VOUT = 1.8 V.

13.Respect SOA.

14.Guaranteed by design and characterization.

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.5 V

(−40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 15)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 2.475 2.5 2.525 V

−40°C ≤ TJ ≤ 125°C 2.450 2.5 2.550

LineReg Line Regulation 3.5 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 3.5 V −20 1 20 mV

VDO Dropout Voltage IOUT = 150 mA (Note 16) −240 350 mV

IOUT Output Current (Note 17) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −225 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 18) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.5 V + 200 mVpp Modulation

IOUT = 150 mA

−57 −dB

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA

f = 100 Hz to 1 MHz, COUT = 1 mF

−125 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 18) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 18)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 18) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

15.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

16.Characterized when VOUT falls 75 mV below the regulated voltage and only for devices with VOUT = 2.5 V.

17.Respect SOA.

18.Guaranteed by design and characterization.

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.8 V

(−40°C ≤ TJ ≤ 125°C; VIN = 3.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 19)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 2.772 2.8 2.828 V

−40°C ≤ TJ ≤ 125°C 2.744 2.8 2.856

LineReg Line Regulation 3.8 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 3.8 V −20 1 20 mV

VDO Dropout Voltage IOUT = 150 mA (Note 20) −210 315 mV

IOUT Output Current (Note 21) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −195 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 22) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.8 V + 200 mVpp Modulation

IOUT = 150 mA

−40 −dB

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA

f = 100 Hz to 1 MHz, COUT = 1 mF

−125 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 22) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 22)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 22) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

19.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

20.Characterized when VOUT falls 84 mV below the regulated voltage and only for devices with VOUT = 2.8 V.

21.Respect SOA.

22.Guaranteed by design and characterization.

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.0 V

(−40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 23)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 2.97 3.0 3.03 V

−40°C ≤ TJ ≤ 125°C 2.94 3.0 3.06

LineReg Line Regulation 4.0 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4 V −20 1 20 mV

VDO Dropout Voltage IOUT = 150 mA (Note 24) −190 260 mV

IOUT Output Current (Note 25) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −195 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 26) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.0 V + 200 mVpp Modulation

IOUT = 150 mA

−47 −dB

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA

f = 100 Hz to 1 MHz, COUT = 1 mF

−120 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 26) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 26)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 26) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

23.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

24.Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V.

25.Respect SOA.

26.Guaranteed by design and characterization.

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.3 V

(−40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 27)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 3.267 3.3 3.333 V

−40°C ≤ TJ ≤ 125°C 3.234 3.3 3.366

LineReg Line Regulation 4.3 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.3 V −20 1 20 mV

VDO Dropout Voltage IOUT = 150 mA (Note 28) −180 250 mV

IOUT Output Current (Note 29) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −195 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 30) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.3 V + 200 mVpp Modulation

IOUT = 150 mA

−41 −dB

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA

f = 100 Hz to 1 MHz, COUT = 1 mF

−125 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 30) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 30)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 30) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

27.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

28.Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V.

29.Respect SOA.

30.Guaranteed by design and characterization.

NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.6 V

(−40°C ≤ TJ ≤ 125°C; VIN = 4.6 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 31)

Symbol Parameter Test Conditions Min Typ Max Unit

VIN Operating Input Voltage 2.2 −5.5 V

VOUT Output Voltage TA = +25°C 3.564 3.6 3.636 V

−40°C ≤ TJ ≤ 125°C 3.528 3.6 3.672

LineReg Line Regulation 4.6 V < VIN ≤ 5.5 V, IOUT = 1 mA −0.05 0.20 %/V

LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.6 V −20 1 20 mV

VDO Dropout Voltage IOUT = 150 mA (Note 32) −170 240 mV

IOUT Output Current (Note 33) 150 − − mA

ISC Short Circuit Current Limit VOUT = 0 V −195 −mA

IQQuiescent Current IOUT = 0 mA −0.5 0.9 mA

ISTB Standby Current VEN = 0 V, TJ = 25°C−0.1 0.5 mA

VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V

VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V

IEN EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 34) −10 −nA

PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.6 V + 200 mVpp Modulation

IOUT = 150 mA

−30 −dB

VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA

f = 100 Hz to 1 MHz, COUT = 1 mF

−130 −mVrms

RLOW Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 34) −100 −W

TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C

(Note 34)

−175 −°C

TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 34) −25 −°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

31.Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ=T

A=25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

32.Characterized when VOUT falls 108 mV below the regulated voltage and only for devices with VOUT = 3.6 V.

33.Respect SOA.

34.Guaranteed by design and characterization.

TYPICAL CHARACTERISTICS

Figure 3. Output Voltage vs. Temperature,

Vout = 1.2 V

Figure 4. Output Voltage vs. Temperature,

Vout = 1.8 V

TEMPERATURE (°C) TEMPERATURE (°C)

806040200−20−40

1.190

1.192

1.194

1.196

1.198

1.200

1.202

806040200−20−40

1.790

1.792

1.794

1.796

1.798

1.800

1.802

OUTPUT VOLTAGE (V)

Vin = 5.5 V

Vin = 3.0 V

Vin = 2.2 V

Vin = 5.5 V

Vin = 3.5 V

Vin = 2.8 V

NCV8170xxx120TyG

Cin = Cout = 1 mF

Iout = 1 mA

NCV8170xxx180TyG

Cin = Cout = 1 mF

Iout = 1 mA

100 120 100 120

NCV8170

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TYPICAL CHARACTERISTICS

Figure 5. Output Voltage vs. Temperature,

Vout = 3.0 V

Figure 6. Output Voltage vs. Temperature,

Vout = 3.6 V

TEMPERATURE (°C) TEMPERATURE (°C)

1006040200−20−40

2.984

2.988

2.992

2.996

3.000

3.004

3.008

806040200−20−40

3.580

3.584

3.588

3.592

3.596

3.600

3.604

Figure 7. Output Voltage vs. Output Current,

Vout = 1.2 V

Figure 8. Output Voltage vs. Output Current,

Vout = 1.8 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

140120100806040200

1.194

1.195

1.196

1.197

1.198

1.199

1.200

140120100806040200

1.790

1.792

1.794

1.796

1.798

1.800

1.802

Figure 9. Output Voltage vs. Output Current,

Vout = 3.0 V

Figure 10. Output Voltage vs. Output Current,

Vout = 3.6 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

140120100806040200

2.996

2.997

2.998

2.999

3.000

3.001

3.002

140120100806040200

3.593

3.594

3.595

3.596

3.597

3.598

3.599

OUTPUT VOLTAGE (V)

Vin = 5.5 V

Vin = 5.0 V Vin = 3.3 − 4.5 V

NCV8170xxx300TyG

Cin = Cout = 1 mF

Iout = 1 mA

Vin = 5.5 V

Vin = 5.0 V

NCV8170xxx360TyG

Cin = Cout = 1 mF

Iout = 1 mA

Vin = 3.8 − 4.5 V

Vin = 5.5 V

Vin = 4.0 V

NCV8170xxx120TyG

Cin = Cout = 1 mF

TA = 25°C

Vin = 3.0 V

Vin = 2.5 V

Vin = 5.5 V

Vin = 4.5 V

NCV8170xxx180TyG

Cin = Cout = 1 mF

TA = 25°C

Vin = 4.0 V

Vin = 2.8 V

Vin = 5.5 V

Vin = 5.0 V

NCV8170xxx300TyG

Cin = Cout = 1 mF

TA = 25°C

Vin = 4.5 V

Vin = 4.0 V

Vin = 5.5 V

Vin = 5.0 V

NCV8170xxx360TyG

Cin = Cout = 1 mF

TA = 25°C

Vin = 4.6 V

Vin = 4.3 V

80 120 100 120

NCV8170

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 11. Dropout Voltage vs. Output Current,

Vout = 1.8 V

Figure 12. Dropout Voltage vs. Output Current,

Vout = 2.5 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

140120100806040200

200

300

500

140120100806040200

100

150

200

250

350

Figure 13. Dropout Voltage vs. Output Current,

Vout = 3.0 V

Figure 14. Dropout Voltage vs. Output Current,

Vout = 3.6 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

140120100806040200

100

150

200

300

140120100806040200

150

200

250

Figure 15. Quiescent Current vs. Temperature,

Vout = 1.2 V

Figure 16. Quiescent Current vs. Temperature,

Vout = 2.5 V

TEMPERATURE (°C) TEMPERATURE (°C)

806040200−20−40

0.35

0.40

0.45

0.50

0.55

0.60

0.65

806040200−20−40

0.35

0.40

0.45

0.50

0.55

0.60

0.65

DROPOUT VOLTAGE (mV)

QUIESCENT CURRENT (mA)

TA = 25°C

NCV8170xxx180TyG

Cin = Cout = 1 mFTA = 125°C

TA = −40°C

100

TA = 25°C

NCV8170xxx250TyG

Cin = Cout = 1 mFTA = 125°C

TA = −40°C

TA = 25°C

NCV8170xxx300TyG

Cin = Cout = 1 mFTA = 125°C

TA = −40°C

TA = 25°C

NCV8170xxx360TyG

Cin = Cout = 1 mF

TA = 125°C

TA = −40°C

100

Vin = 5.5 V

Vin = 5.0 V

Vin = 2.5 − 4.0 V

NCV8170xxx120TyG

Cin = Cout = 1 mF

Iout = 0

Vout = 1.2 V

Vin = 5.5 V

Vin = 5.0 V

Vin = 3.5 − 4.0 V

NCV8170xxx250TyG

Cin = Cout = 1 mF

Iout = 0

Vout = 2.5 V

400

300

250

100 120 100 120

NCV8170

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 17. Quiescent Current vs. Temperature,

Vout = 3.6 V

Figure 18. Ground Current vs. Output Current,

Vout = 1.2 V

TEMPERATURE (°C) OUTPUT CURRENT (mA)

1006040200−20−40

0.35

0.40

0.45

0.50

0.55

0.60

0.65

1001010.10.01

Figure 19. Ground Current vs. Output Current,

Vout = 2.5 V

Figure 20. Ground Current vs. Output Current,

Vout = 3.6 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

1001010.10.01

Figure 21. PSRR vs. Frequency, Vout = 1.2 V Figure 22. PSRR vs. Frequency, Vout = 1.8 V

FREQUENCY (Hz) FREQUENCY (Hz)

1M100k10k1k100

QUIESCENT CURRENT (mA)

GROUND CURRENT (mA)

PSRR (dB)

Vin = 5.5 V

Vin = 5.0 V

NCV8170xxx360TyG

Cin = Cout = 1 mF

Iout = 0

Vout = 3.6 V

Vin = 4.0 V Vin = 5.5 V

Vin = 2.5 V

NCV8170xxx120TyG

Cin = Cout = 1 mF

TA = 25°C

Vout = 1.2 V

Vin = 3.5 V

Vin = 5.5 V

Vin = 3.5 V

NCV8170xxx250TyG

Cin = Cout = 1 mF

TA = 25°C

Vout = 2.5 V Vin = 4.5 V

40 Vin = 5.5 V

Vin = 4.6 V

NCV8170xxx360TyG

Cin = Cout = 1 mF

TA = 25°C

Vout = 3.6 V Vin = 5.0 V

Iout = 1 mA

10 mA

150 mA

100 mA

NCV8170xxx120TyG

Cout = 1 mF

Vin = 2.2 V+ 200 mVpp modulation

TA = 25°C

Vout = 1.2 V

Iout = 1 mA

10 mA

150 mA

100 mA

NCV8170xxx180TyG

Cout = 1 mF

Vin = 2.8 V+ 200 mVpp modulation

TA = 25°C

Vout = 1.8 V

80 120 1000

1000 1000

NCV8170

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 23. PSRR vs. Frequency, Vout = 3.0 V Figure 24. PSRR vs. Frequency, Vout = 3.6 V

FREQUENCY (Hz) FREQUENCY (Hz)

1M100k10k1k100

Figure 25. Output Voltage Noise Spectral

Density, Vout = 1.2 V

Figure 26. Output Voltage Noise Spectral

Density, Vout = 1.8 V

FREQUENCY (Hz) FREQUENCY (Hz)

1M100k10k1k10010

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1M100k10k1k100

0.2

0.6

0.8

1.2

1.4

1.6

2.0

Figure 27. Output Voltage Noise Spectral

Density, Vout = 3.0 V

Figure 28. Output Voltage Noise Spectral

Density, Vout = 3.6 V

FREQUENCY (Hz) FREQUENCY (Hz)

1M100k10k1k10010

0.5

1.0

1.5

2.0

2.5

3.0

3.5

1M100k10k1k10010

0.5

1.0

1.5

2.0

3.0

3.5

4.0

PSRR (dB)

OUTPUT VOLTAGE NOISE

SPECTRAL DENSITY (mV/√Hz)

OUTPUT VOLTAGE NOISE

SPECTRAL DENSITY (mV/√Hz)

Iout = 1 mA

10 mA

150 mA

100 mA

NCV8170xxx300TyG

Cout = 1 mF

Vin = 4.0 V+ 200 mVpp modulation

TA = 25°C

Vout = 3.0 V

Iout = 1 mA

10 mA

150 mA

100 mA

NCV8170xxx360TyG

Cout = 1 mF

Vin = 4.6 V+ 200 mVpp modulation

TA = 25°C

Vout = 3.6 V

NCV8170xxx120TyG

Cin = Cout = 1 mF

Vin = 5.5 V

Vout = 1.2 V

Iout = 1 mA

TA = 25°C

NCV8170xxx180TyG

Cin = Cout = 1 mF

Vin = 5.5 V

Vout = 1.8 V

Iout = 1 mA

TA = 25°C

NCV8170xxx300TyG

Cin = Cout = 1 mF

Vin = 5.5 V

Vout = 3.0 V

Iout = 1 mA

TA = 25°C

NCV8170xxx360TyG

Cin = Cout = 1 mF

Vin = 5.5 V

Vout = 3.6 V

Iout = 1 mA

TA = 25°C

0.4

1.0

1.8

2.5

OUTPUT VOLTAGE NOISE

SPECTRAL DENSITY (mV/√Hz)

OUTPUT VOLTAGE NOISE

SPECTRAL DENSITY (mV/√Hz)

NCV8170

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 29. Load Transient Response at Load

Step from 1 mA to 50 mA, Vout = 1.2 V

Figure 30. Load Transient Response at Load

Step from 0.1 mA to 50 mA, Vout = 1.2 V

Figure 31. Load Transient Response at Load

Step from 1 mA to 50 mA, Vout = 2.5 V

Figure 32. Load Transient Response at Load

Step from 0.1 mA to 50 mA, Vout = 2.5 V

Figure 33. Load Transient Response at Load

Step from 1 mA to 50 mA, Vout = 3.0 V

Figure 34. Load Transient Response at Load

Step from 0.1 mA to 50 mA, Vout = 3.0 V

NCV8170

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 35. Load Transient Response at Load

Step from 1mA to 50 mA, Vout= 3.6 V

Figure 36. Load Transient Response at Load

Step from 0.1 mA to 50 mA, Vout = 3.6 V

Figure 37. Output Voltage With and Without

Active Discharge Feature, Vout = 1.2 V

Figure 38. Output Voltage With and Without

Active Discharge Feature, Vout = 2.5 V

Figure 39. Output Voltage With and Without

Active Discharge Feature, Vout = 3.0 V

Figure 40. Output Voltage With and Without

Active Discharge Feature, Vout = 3.6 V

NCV8170

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 41. Enable Turn−on Response at

Vout = 1.2 V

Figure 42. Enable Turn−on Response at

Vout = 2.5 V

Figure 43. Enable Turn−on Response at

Vout = 3.6 V

NCV8170

www.onsemi.com

APPLICATIONS INFORMATION

General

The NCV8170 is a high performance 150 mA Linear

Regulator with Ultra Low IQ. This device delivers low

Noise and high Power Supply Rejection Ratio with excellent

dynamic performance due to employing the Dynamic

Quiescent Current adjustment which assure ultra low IQ

consumption at no – load state. These parameters make this

device very suitable for various battery powered

applications.

Input Decoupling (CIN)

It is recommended to connect at least a 1 mF Ceramic X5R

or X7R capacitor between IN and GND pins of the device.

This capacitor will provide a low impedance path for any

unwanted AC signals or Noise superimposed onto constant

Input Voltage. The good input capacitor will limit the

influence of input trace inductances and source resistance

during sudden load current changes.

Higher capacitance and lower ESR Capacitors will

improve the overall line transient response.

Output Decoupling (COUT)

The NCV8170 does not require a minimum Equivalent

Series Resistance (ESR) for the output capacitor. The device

is designed to be stable with standard ceramics capacitors

with values of 1.0 mF or greater up to 10 mF. The X5R and

X7R types have the lowest capacitance variations over

temperature thus they are recommended. There is

recommended connect the output capacitor as close as

possible to the output pin of the regulator.

Enable Operation

The NCV8170 uses the EN pin to enable /disable its

device and to activate /deactivate the active discharge

function at devices with this feature. If the EN pin voltage

is pulled below 0.4 V the device is guaranteed to be disable.

The active discharge transistor at the devices with Active

Discharge Feature is activated and the output voltage VOUT

is pulled to GND through an internal circuitry with effective

resistance about 100 ohms.

If the EN pin voltage is higher than 1.2 V the device is

guaranteed to be enabled. The internal active discharge

circuitry is switched off and the desired output voltage is

available at output pin. In case the Enable function is not

required the EN pin should be connected directly to input

pin.

Thermal Shutdown

When the die temperature exceeds the Thermal Shutdown

point (TSD = 175°C typical) the device goes to disabled state

and the output voltage is not delivered until the die

temperature decreases to 150°C. The Thermal Shutdown

feature provides a protection from a catastrophic device

failure at accidental overheating. This protection is not

intended to be used as a substitute for proper heat sinking.

Power Dissipation and Heat sinking

The maximum power dissipation supported by the device

is dependent upon board design and layout. Mounting pad

configuration on the PCB, the board material, and the

ambient temperature affect the rate of junction temperature

rise for the part. The maximum power dissipation the

NCV8170 device can handle is given by:

PD(MAX) +ƪTJ(MAX) *TAƫ

RqJA

(eq. 1)

The power dissipated by the NCV8170 device for given

application conditions can be calculated from the following

equations:

PD[VINǒIGND(IOUT)Ǔ)IOUTǒVIN *VOUTǓ(eq. 2)

VIN(MAX) [

PD(MAX) )ǒVOUT IOUTǓ

IOUT )IGND

(eq. 3)

Hints

VIN and GND printed circuit board traces should be as

wide as possible. When the impedance of these traces is

high, there is a chance to pick up noise or cause the regulator

to malfunction. Place external components, especially the

output capacitor, as close as possible to the NCV8170, and

make traces as short as possible.

NCV8170

www.onsemi.com

ORDERING INFORMATION

Device

Nominal Output

Voltage Marking Active Discharge Package Shipping†

NCV8170AMX120TCG 1.2 CC

Yes

XDFN4 1.0 x 1.0

(Pb−Free)

3000 / Tape &

Reel

NCV8170AMX150TCG 1.5 CJ

NCV8170AMX180TCG 1.8 CD

NCV8170AMX250TCG 2.5 CE

NCV8170AMX280TCG 2.8 CF

NCV8170AMX300TCG 3.0 CA

NCV8170AMX310TCG 3.1 CN

NCV8170AMX330TCG 3.3 CG

NCV8170AMX360TCG 3.6 CM

NCV8170BMX120TCG 1.2 3C

NCV8170BMX150TCG 1.5 3J

NCV8170BMX180TCG 1.8 3D

NCV8170BMX250TCG 2.5 3E

NCV8170BMX280TCG 2.8 3F

NCV8170BMX300TCG 3.0 3A

NCV8170BMX310TCG 3.1 3Y

NCV8170BMX330TCG 3.3 3G

NCV8170BMX360TCG 3.6 3M

NCV8170AXV120T2G 1.2 CC

Yes

SOT − 563

(Pb−Free)

4000 / Tape &

Reel

NCV8170AXV150T2G 1.5 CJ

NCV8170AXV180T2G 1.8 CD

NCV8170AXV250T2G 2.5 CE

NCV8170AXV280T2G 2.8 CF

NCV8170AXV300T2G 3.0 CA

NCV8170AXV310T2G 3.1 CN

NCV8170AXV330T2G 3.3 CG

NCV8170AXV360T2G 3.6 CM

NCV8170BXV120T2G 1.2 3C

NCV8170BXV150T2G 1.5 3J

NCV8170BXV180T2G 1.8 3D

NCV8170BXV250T2G 2.5 3E

NCV8170BXV280T2G 2.8 3F

NCV8170BXV300T2G 3.0 3A

NCV8170BXV310T2G 3.1 3Y

NCV8170BXV330T2G 3.3 3G

NCV8170BXV360T2G 3.6 3N

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NCV8170

www.onsemi.com

PACKAGE DIMENSIONS

DIM MIN NOM MAX

MILLIMETERS

A0.50 0.55 0.60

b0.17 0.22 0.27

D1.50 1.60 1.70

E1.10 1.20 1.30

e0.5 BSC

L0.10 0.20 0.30

1.50 1.60 1.70

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

MIN NOM MAX

INCHES

SOT−563, 6 LEAD

CASE 463A

ISSUE F

0.08 (0.003) X

b6 5 PL

−X−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

12 3

1.35

0.0531

0.5

0.0197

ǒmm

inchesǓ

SCALE 20:1

0.5

0.0197

1.0

0.0394

0.45

0.0177

0.3

0.0118

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.08 0.12 0.18 0.003 0.005 0.007

NCV8170

www.onsemi.com

PACKAGE DIMENSIONS

XDFN4 1.0x1.0, 0.65P

MX SUFFIX

CASE 711AJ

ISSUE O

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL

AND IS MEASURED BETWEEN 0.15 AND

0.20 mm FROM THE TERMINAL TIPS.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

ÉÉ

BOTTOM VIEW

NOTE 3

2X 0.05 C

PIN ONE

REFERENCE

TOP VIEW

2X 0.05 C

(A3)

0.05 C

CSEATING

PLANE

SIDE VIEW

DIM MIN MAX

MILLIMETERS

A0.33 0.43

A1 0.00 0.05

A3 0.10 REF

b0.15 0.25

D1.00 BSC

D2 0.43 0.53

E1.00 BSC

e0.65 BSC

L0.20 0.30

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

MOUNTING FOOTPRINT*

1.20

0.26

0.24 4X

DIMENSIONS: MILLIMETERS

0.39

RECOMMENDED

PACKAGE

OUTLINE

NOTE 4

e/2

45 5

0.05 BC

0.65

PITCH

DETAIL A

b2 0.02 0.12

L2 0.07 0.17

0.52

0.11

L24X

DETAIL A

b24X

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed

at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation

or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets

and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each

customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,

or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which

the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or

unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

NCV8170/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative