ar MOTOROLA MAXIMUM RATINGS Rating Drain-Source Voitage Drain-Gate Voltage Gate-Source Voltage Gs Drain Current Continuous (1) 2N6659 MPF6659 thru thru 2NG661 MPF6661 2N6659,60,61 CASE 79-04, STYLE 6 fe a 2N6659 | 2N6660 | 2NG661 MPF6659 | MPF6660 | MP g le = o <|<|<|g B i Pulsed (2) TO-39 (TO-205AD) MT, 2N6659 MPF6659 - 2N6661 MPF6661 Total Device Dissipation @ Tc = 26C Derate above 26C Watts mWPC 3 Gate | < 6.25 50 Total Device Dissipation Pp Watts MPF6659,60,61 2 Source @ TA = 25C _ 1.0 mWPC CASE 29-03, STYLE 22 erate above 25 8.9 TO-92 (TO-226AE} Operating and Storage Junction | Ty, Tstg -55 to +150 a4 Temperature Range TMOS SWITCHING (1) The Power Dissipation of the package may result in a lower continuous drain FET TRANSISTORS current. (2) Pulse Width < 300 us, Duty Cycle = 2.0%. N-CHANNEL ENHANCEMENT ELECTRICAL CHARACTERISTICS (Ta = 26C unless otherwise noted.) Characteristic | Symbol | Min | Typ | Max | Unit | OFF CHARACTERISTICS Zero-Gate-Voltage Drain Current Adc (Vos = Maximum Rating, Vgg = 0) _ Gate-Body Leakage Current nAdc (VGs = 15 V, Vos = 0) Drain-Source Breakdown Voltage ViBR]DSX Vde (Vgs = 0, Ip = 10 uA) 2N6659, MPFGE659 36 2N6660, MPFE660 60 _ 2N6661, MPFGE661 90 ON CHARACTERISTICS(1) Gate Threshold Voltage VGS(Th) (Vps = Ves: Ip = 1.0 mA) Drain-Source On-Voltage Vdc (Vag = 10 V, [Dp = 1.0 A) 2N6659, MPF6659 2N6660, MPF6EE0 2N6661, MPF6661 (Ves = 5.0 V, Ip = 0.3 A) 2N6659, MPF6659 2N6660, MPFE660 2N6661, MPF6661 Static Drain-Source On Resistance Ohms (Vas = 10 Vde, Ip = 1.0 Adc) 2N6659, MPF6E859 2N6660, MPFEGEO 2N6661, MPF6661 . On-State Drain Current IDton) Amps (Vps = 25 V, Ves = 10 V) SMALL-SIGNAL CHARACTERISTICS Input Capacitance Ciss (Vps = 25 V, VGs = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss (Vps = 25 V, Ves = 0, f = 1.0 MHz) Output Capacitance Coss (Vps = 25 V,Vgs = 0, f = 1.0 MHz) Forward Transconductance Sfs (Vps = 26 V, Ip = 0.5 A) Gd cl So | a oh S pw = oo & MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-55 2N6659 thru 2N6661, MPF6659 thru MPF6661 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbot | Min =| Typ | Max | Unit SWITCHING CHARACTERISTICS(1) Risetime OCSCSCSSSSCSCSCSCCS*SCSsdS Sd faltime SSOSCSCSCSSCSCSSCSSCSSSSSCid Ot ne umon Time 80 | ne 5.0 ns (1) Pulse Test: Pulse Width =< 300 ys, Duty Cycle < 2.0%, RESISTIVE SWITCHING FIGURE 1 SWITCHING TEST CIRCUIT FIGURE 2 SWITCHING WAVEFORMS + 25 V ion sre seme foto tr Pulse Generator Vin 602 \tunuetor Vout 90% Output y out 10% Inverted 90% ; G0% Pulse 50% 1OV Input Vin 10% Width FIGURE 3 V@sith) NORMALIZED versus TEMPERATURE FIGURE 4 ON-REGION CHARACTERISTICS . TL aigh-t-_| | Vos = Veg | Tr 2 { [| tf tf ft pee g | ete} | | | | | | {| SL a is 2 tL] | | | | st ee if let eS "4 0 a pe oo 0 196 {C) 0 1.0 2.0 3.0 4.0 Ty, JUNCTION TEMPERATURE Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 5 - OUTPUT CHARACTERISTICS FIGURE 6 CAPACITANCE versus DRAIN-TO-SOURCE VOLTAGE 2.0 au Cres g oe B12 Z = 5 : = fy pew bY SSE Few = rv = Zz 740. 7 | | | | | 0 10 20 30 40 0 10 20 30 40 50 60 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas. DRAIN-TO-SOURCE VOLTAGE (VOLTS) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-56 2N6659 thru 2N6661, MPF6659 thru MPF6661 FIGURE 7 ON-VOLTAGE versus TEMPERATURE ATM aT UII: CMT NCTC INTC TAME AN SACI CIN AANLL 1 I Le ~ e22g 3g! 30 0 50 Ty, JUNCTION TEMPERATURE (C} 10 {SLTOA) JOVLIOA JOUNOS-OL-NIvuG HOIST, MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-57