TIP34C - ON Semiconductor - Datasheet.Directory

Complementary Silicon

High-Power Transistors

...for general–purpose power amplifier and switching

applications.

•10 A Collector Current

•Low Leakage Current —

ICEO = 0.7 mA @ 60 V

•Excellent dc Gain —

hFE = 40 Typ @ 3.0 A

•High Current Gain Bandwidth Product —

hfe = 3.0 min @ IC

= 0.5 A,

f = 1.0 MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

TIP33C

TIP34C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak (1)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎ

3.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25C

Derate above 25C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.64

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

1.56

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Junction–To–Free–Air Thermal Resistance

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎ

35.7

ÎÎÎ

C/W

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle  10%.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

January, 2002 – Rev. 1 1Publication Order Number:

TIP33C/D

TIP33C

TIP34C

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

80 WATTS

NPN

PNP

CASE 340D–02

TO–218AC

TIP33C TIP34C

http://onsemi.com

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (A)

0.1 1.0

5.0

100

500

hFE, DC CURRENT GAIN

200

NPN

PNP

VCE = 4.0 V

TJ = 25°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

100

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 60 V, IB = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEO

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

0.7

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ÎÎÎÎÎ

ICES

ÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VEB = 5.0 V, IC = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 A, VCE = 4.0 V)

(IC = 3.0 A, VCE = 4.0 V)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

hFE

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

100

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 A, IB = 0.3 A)

(IC = 10 A, IB = 2.5 A)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 3.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.6

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

hfe

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ÎÎÎ

3.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2.0%.

TIP33C TIP34C

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10 201.0 50 100

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

1.0

0.1

2.0

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT

1.0ms

300µs

5.0

3.0

IC, COLLECTOR CURRENT (AMPS)

10ms

0.2

0.5

2.0 3.0 5.0 7.0 30 70

TC = 25°C

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

600 80 100

Figure 3. Maximum Rated Forward Bias

Safe Operating Area

IC, COLLECTOR CURRENT (AMPS)

5.0

20 40

L = 200 µH

IC/IB ≥ 5.0

VBE(off) = 0 to 5.0 V

TC = 100°C

FORWARD BIAS

The Forward Bias Safe Operating Area represents the

voltage and current conditions these devices can withstand

during forward bias. The data is based on TC = 25C; TJ(pk)

is variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10%, and must be

derated thermally for TC > 25C.

REVERSE BIAS

The Reverse Bias Safe Operating Area represents the

voltage and current conditions these devices can withstand

during reverse biased turn–off. This rating is verified under

clamped conditions so the device is never subjected to an

avalanche mode.

TIP33C TIP34C

http://onsemi.com

PACKAGE DIMENSIONS

CASE 340D–02

ISSUE E

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

TIP33C/D

Literature Fulfillment:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

N. American Technical Support: 800–282–9855 Toll Free USA/Canada