NUP5120X6 ESD Protection Diode Array, 5-Line This 5-line surge protection array is designed for application requiring surge protection capability. It is intended for use in over-transient voltage and ESD sensitive equipment such as cell phones, portables, computers, printers and other applications. This device features a monolithic common anode design which protects five independent lines in a single SOT-563 package. www.onsemi.com SOT-563 5-LINE SURGE PROTECTION Features * Protects up to 5 Lines in a Single SOT-563 Package * ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model * * PIN ASSIGNMENT and Class C (Exceeding 400 V) per Machine Model. Compliance with IEC 61000-4-2 (ESD) 15 kV (Air), 8 kV (Contact) This is a Pb-Free Device Applications * Hand Held Portable Applications * Serial and Parallel Ports * Notebooks, Desktops, Servers Rating Value Unit 90 W Operating Junction Temperature Range -40 to 125 C TSTG Storage Temperature Range -55 to 150 C TL Lead Solder Temperature - Maximum (10 seconds) 260 C ESD Human Body Model (HBM) Machine Model (MM) IEC 61000-4-2 Air (ESD) IEC 61000-4-2 Contact (ESD) 16000 400 15000 8000 V PPK 1 Peak Power Dissipation 8x20 msec double exponential waveform, (Note 1) TJ 6 2 5 3 4 PIN 1. 2. 3. 4. 5. 6. MAXIMUM RATINGS (TJ = 25C, unless otherwise specified) Symbol 1 6 CATHODE ANODE CATHODE CATHODE CATHODE CATHODE MARKING DIAGRAM 54 12 3 SCALE 4:1 SOT-563 CASE 463A STYLE 6 RN MG G RN = Specific Device Code M = Month Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 1. Device Package Shipping NUP5120X6T1G SOT-563 (Pb-Free) 4000/Tape & Reel NUP5120X6T2G SOT-563 (Pb-Free) 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 November, 2017 - Rev. 5 1 Publication Order Number: NUP5120/D NUP5120X6 ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise specified) Parameter Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA, (Note 3) Reverse Leakage Current Capacitance Symbol Min VRWM Typ Max Unit - 5.0 V VBR 6.2 6.8 7.2 V VRWM = 3 V IR - 0.01 0.5 mA VR = 0 V, f = 1 MHz (Line to GND) VR = 2.5 V, f = 1 MHz (Line to GND) CJ - 54 70 pF 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. www.onsemi.com 2 NUP5120X6 120 1000 PEAK POWER (W) % OF RATED POWER OR IPP TA = 25 C 100 80 60 40 100 20 0 0 25 50 75 100 125 10 150 Figure 2. Peak Power vs. Pulse Duration 60 CT, TYPICAL CAPACITANCE (pF) 10 1 6 8 10 12 14 TA = 25 C 50 40 30 20 10 0 16 0 1 3 4 5 VR, REVERSE VOLTAGE (V) Figure 3. Peak Current vs. Clamp Voltage Figure 4. Typical Capacitance vs. Reverse Voltage 6 1 TA = 25 C TA = 25 C 100 FORWARD CURRENT (A) REVERSE CURRENT (nA) 2 VCL, CLAMP VOLTAGE (V) 1000 TJ = 125 C 10 TJ = 25 C 1 0.1 0.01 100 Figure 1. Power Derating vs. Ambient Temperature TA = 25 C IPP, PEAK CURRENT (A) 10 PULSE DURATION (S) 100 0.1 1 TA, AMBIENT TEMPERATURE (C) 1 2 3 4 5 TJ = 125 C 0.1 TJ = 25 C 0.01 0.001 0.6 6 0.7 0.8 0.9 1.0 1.1 1.2 REVERSE VOLTAGE (V) FORWARD VOLTAGE (V) Figure 5. Reverse Current vs. Reverse Voltage Figure 6. Typical Forward Current vs. Forward Voltage www.onsemi.com 3 NUP5120X6 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A ISSUE G D -X- 5 6 1 e 2 A 4 E -Y- 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y SOLDERING FOOTPRINT* MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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