© Semiconductor Components Industries, LLC, 2006
November, 2017 − Rev. 5
1Publication Order Number:
NUP5120/D
NUP5120X6
ESD Protection Diode Array,
5-Line
This 5−line surge protection array is designed for application
requiring surge protection capability. It is intended for use in
over−transient voltage and ESD sensitive equipment such as cell
phones, portables, computers, printers and other applications. This
device features a monolithic common anode design which protects
five independent lines in a single SOT−563 package.
Features
•Protects up to 5 Lines in a Single SOT−563 Package
•ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
•Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)
•This is a Pb−Free Device
Applications
•Hand Held Portable Applications
•Serial and Parallel Ports
•Notebooks, Desktops, Servers
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol Rating Value Unit
PPK 1 Peak Power Dissipation
8x20 msec double exponential waveform,
(Note 1)
90 W
TJOperating Junction Temperature Range −40 to 125 °C
TSTG Storage Temperature Range −55 to 150 °C
TLLead Solder Temperature – Maximum
(10 seconds)
260 °C
ESD Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD)
16000
400
15000
8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
SOT−563
CASE 463A
STYLE 6
123
654
RN = Specific Device Code
M = Month Code
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
RN MG
G
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Device Package Shipping†
ORDERING INFORMATION
1
2
3
6
5
4
PIN ASSIGNMENT
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
SOT−563 5−LINE SURGE
PROTECTION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
www.onsemi.com
NUP5120X6T1G SOT−563
(Pb−Free)
4000/Tape & Reel
NUP5120X6T2G SOT−563
(Pb−Free)
4000/Tape & Reel
SCALE 4:1
NUP5120X6
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Parameter Conditions Symbol Min Typ Max Unit
Reverse Working Voltage (Note 2) VRWM −5.0 V
Breakdown Voltage IT = 1 mA, (Note 3) VBR 6.2 6.8 7.2 V
Reverse Leakage Current VRWM = 3 V IR−0.01 0.5 mA
Capacitance VR = 0 V, f = 1 MHz (Line to GND)
VR = 2.5 V, f = 1 MHz (Line to GND)
CJ−54 70 pF
2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT
.
NUP5120X6
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3
Figure 1. Power Derating vs. Ambient
Temperature
PULSE DURATION (μS)
100101
100
10
1000
PEAK POWER (W)
Figure 2. Peak Power vs. Pulse Duration
Figure 3. Peak Current vs. Clamp Voltage
VCL, CLAMP VOLTAGE (V)
161086
IPP
, PEAK CURRENT (A)
1412
1
0.1
10
100
VR, REVERSE VOLTAGE (V)
6543210
60
50
40
30
20
10
0
CT
, TYPICAL CAPACITANCE (pF)
Figure 4. Typical Capacitance vs. Reverse
Voltage
Figure 5. Reverse Current vs. Reverse Voltage
REVERSE VOLTAGE (V)
4321
REVERSE CURRENT (nA)
65
0.1
10
0.01
100
1000
TJ = 25 °C
FORWARD VOLTAGE (V)
1.21.11.00.90.80.70.6
0.1
0.01
0.001
1
FORWARD CURRENT (A)
Figure 6. Typical Forward Current vs. Forward
Voltage
TA, AMBIENT TEMPERATURE (°C)
1501251007550250
80
60
40
20
0
100
120
% OF RATED POWER OR IPP
1
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
NUP5120X6
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4
PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT−563, 6 LEAD
CASE 463A
ISSUE G
eM
0.08 (0.003) X
b6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
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NUP5120/D
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