DATA SH EET
Product specification
Supersedes data of April 1995 1996 Jul 30
DISCRETE SEMICONDUCTORS
BF245A; BF245B; BF245C
N-channel silicon field-effect
transistors
1996 Jul 30 2
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B;
BF245C
FEATURES
Interchangeability of drai n and source connec tions
Frequencies up to 700 MHz.
APPLICATIONS
LF, HF and DC amplifiers.
DESCRIPTION
General purpos e N-channel symme tric al junction
field-effect tra ns i stors in a plastic TO-92 variant package.
PINNING
CAUTION
The device is supplie d in an antistatic package. The
gate-source inpu t must be protected against static
discharge during transport or handling.
PIN SYMBOL DESCRIPTION
1 d drain
2 s source
3ggate
Fig.1 Simplified outline (TO-92 variant)
and symbol.
handbook, halfpage
1
3
2
MAM257
s
d
g
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 30 V
VGSoff gate-source cut-o ff voltage ID=10nA; V
DS =15V 0.25 8V
VGSO gate-sourc e v oltage open drain 30 V
IDSS drain current VDS =15V; V
GS =0
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
Ptot total power dissipation Tamb =75C300 mW
yfsforward transfer admittance VDS =15V; V
GS =0;
f=1kHz; T
amb =25C36.5 mS
Crs reverse transfer capacitance VDS =20V; V
GS =1V;
f=1MHz; T
amb =25C1.1 pF
1996 Jul 30 3
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Max imum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm 10 mm.
THERMAL CHARACTE RISTI CS
STATIC CHARACTERISTICS
Tj=25C; unless otherwise specified.
Note
1. Measured under pulse conditions: tp= 300 s; 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 30 V
VGDO gate-drain voltage open source 30 V
VGSO gate-source voltage open drain 30 V
IDdrain current 25 mA
IGgate current 10 mA
Ptot total power dissipation up to Tamb =75C; 300 mW
up to Tamb =90C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tjoperating junction temperature 150 C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)GSS gate-source breakdown voltage IG=1A; VDS =0 30 V
VGSoff gate-source cut-off voltage ID=10nA; V
DS =15V 0.25 8.0 V
VGS gate-source voltage ID=200A; VDS =15V
BF245A 0.4 2.2 V
BF245B 1.6 3.8 V
BF245C 3.2 7.5 V
IDSS drain current VDS =15V; V
GS =0; note1
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
IGSS gate cut-off current VGS =20 V; VDS =0 5nA
VGS =20 V; VDS =0; T
j=125C0.5 A
1996 Jul 30 4
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; Tamb =25C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cis input capacitance VDS =20V; V
GS =1V; f=1MHz 4pF
Crs reverse transfer capacitance VDS =20V; V
GS =1V; f=1MHz 1.1 pF
Cos output capacitance VDS =20V; V
GS =1V; f=1MHz 1.6 pF
gis input conductance VDS =15V; V
GS =0; f=200MHz 250 S
gos output conductance VDS =15V; V
GS =0; f=200MHz 40 S
yfsforward transfer admittance VDS =15V; V
GS =0; f=1kHz 3 6.5 mS
VDS =15V; V
GS =0; f=200MHz 6mS
yrsreverse transfer admittance VDS =15V; V
GS =0; f=200MHz 1.4 mS
yosoutput admittance VDS =15V; V
GS =0; f=1kHz 25 S
fgfs cut-off frequency VDS =15V; V
GS =0; g
fs = 0.7 of its
value at 1 kHz 700 MHz
Fnoise figure V
DS =15V; V
GS =0; f=100MHz;
RG=1k (common source);
input tuned to minimum noise
1.5 dB
handbook, halfpage
−10
−10
−3
−10
−2
−10
−1
−1
150500
MGE785
100
typ
Tj (°C)
IGSS
(nA)
Fig.2 Gate leakage current as a function of
junction temperature; typical values.
VDS =0; V
GS =20 V.
Fig.3 Transfer characteristics fo r BF245A;
typical values.
handbook, halfpage
VGS (V)
ID
(mA)
6
0−40−2
MGE789
5
4
3
2
1
VDS =15V; T
j=25C.
1996 Jul 30 5
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
handbook, halfpage
VDS (V)
ID
(mA)
6
002010
MBH555
5
4
3
2
1
VGS = 0 V
−0.5 V
−1 V
−1.5 V
Fig.4 Output characteristics for BF245A;
typical values.
VDS =15V; T
j=25C.
Fig.5 Transfer characteristics for BF245B;
typical values.
VDS =15V; T
j=25C.
handbook, halfpage
VGS (V)
ID
(mA)
15
0−40−2
MGE787
10
5
handbook, halfpage
VDS (V)
ID
(mA)
15
002010
MBH553
10
5
VGS = 0 V
−0.5 V
−1 V
−1.5 V
−2 V
−2.5 V
Fig.6 Output characteristics for BF245B;
typical values.
VDS =15V; T
j=25C.
Fig.7 Transfer characteristics for BF245C;
typical values.
handbook, halfpage
VGS (V)
ID
(mA)
30
0
−10 0−5
MGE788
20
10
VDS =15V; T
j=25C.
1996 Jul 30 6
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
handbook, halfpage
VDS (V)
ID
(mA)
30
002010
MBH554
20
10
VGS = 0 V
−1 V
−2 V
−3 V
−4 V
Fig.8 Output char acteristics fo r BF245C;
typical values.
VDS =15V; T
j=25C.
Fig.9 Drain current as a function of junction
temperature; typica l values for BF245A.
VDS =15V.
handbook, halfpage
00 50 150
Tj (°C)
4
ID
(mA)
3
1
2
MGE775
100
−0.5 V
VGS = 0 V
−1.5 V
−1 V
Fig.10 Drain current as a function of junction
temperature; typical values for BF245B.
handbook, halfpage
00 50 150
15
5
10
MGE776
100 Tj (°C)
ID
(mA)
VGS = 0 V
−2 V
−1 V
VDS =15V.
Fig.11 Drain current as a function of junction
temperature; typical values for BF245C.
VDS =15V.
handbook, halfpage
0 50 150
20
0
MGE779
100
4
8
12
16
Tj (°C)
ID
(mA)
VGS = 0 V
−4 V
−2 V
1996 Jul 30 7
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
Fig.12 Input admittance; typical values.
handbook, halfpage
MGE778
103
102
10
1
102
10
1
10−1
10 102103
gis
(μA/V) bis
(mA/V)
f (MHz)
bis
gis
VDS =15V; V
GS =0; T
amb =25C.
Fig.13 Co mmon source reverse ad mittance as a
function of frequency; typical values.
handbook, halfpage
MGE780
104
103
102
10
10
1
10−1
10−2
10 102103
brs
(μA/V) Crs
(pF)
f (MHz)
brs
Crs
VDS =15V; V
GS =0; T
amb =25C.
Fig.14 Common-source forward transfer admittance
as a function of frequency; typical va lues.
VDS =15V; V
GS =0; T
amb =25C.
handbook, halfpage
10
0
MGE782
10 102103
2
4
6
8
gfs,
−bfs
(mA/V)
f (MHz)
−bfs
gfs
Fig.15 Co mmon-source output admit tance as a
function of frequency; typical values.
VDS =15V; V
GS =0; T
amb =25C.
handbook, halfpage
MGE783
103
102
10
1
10
1
10−1
10−2
10 102103
gos
(μA/V) bos
(mA/V)
f (MHz)
bos
gos
1996 Jul 30 8
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
Fig.16 Input capacitance as a function of
gate-sourc e voltage; typical va lues.
VDS =20V; f= 1MHz; T
amb =25C.
handbook, halfpage
0
6
4
2
0−2−10
MGE777
−4−6−8
VGS (V)
Cis
(pF)
typ
Fig.17 Reverse transfer capa citance as a function
of gate-sourc e voltage; typical va lue s.
VDS =20V; f= 1MHz; T
amb =25C.
handbook, halfpage
0−10
1.5
0.5
MGE781
1
Crs
(pF)
−2−4−6−8
VGS (V)
typ
Fig.18 Forward transfer admittance as a function of
drain current; typical values.
handbook, halfpage
8
6
0
MGE791
4
2
|yfs|
(mA/V)
ID (mA)
020
10 155
BF245A
BF245B BF245C
VDS =15V; f= 1kHz; T
amb =25C.
Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values.
VDS =15V; T
j=25C.
1996 Jul 30 9
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
Fig.20 Drain-source on-state resist ance as a
function of gate-s ource voltage;
typical values.
VDS = 0; f = 1 kHz; Tamb =25C.
handbook, halfpage
10
3
10
−1
1
10
10
2
−4−2−10
MGE790
−3
RDSon
(kΩ)
BF245A BF245B BF245C
VGS (V)
Fig.21 Noise figure as a function of frequency;
typical values.
VDS =15V; V
GS =0; R
G=1k; Tamb =25C.
Input tuned to minimum noise.
handbook, halfpage
0
3
MGE786
110
typ
10
2
10
3
1
2
F
(dB)
f (MHz)
1996 Jul 30 10
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max L2
max
2.5 2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant
1
2
3
L2
e1e
e1
04-06-28
05-01-10
1996 Jul 30 11
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
DATA SHEET STATUS
Notes
1. Please consult the most recently issued documen t b efor e initiating or completing a design.
2. The product status of device (s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
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product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Customers are responsible for the design and operation of
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customer’s applications and products planned, as well as
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design and opera ting safeguards to minimi ze the ris ks
associated with their ap plications and produ cts.
1996 Jul 30 12
NXP Semiconductors Product specification
N-channel silicon field-ef fect transistors BF245A; BF245B; BF245C
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors produc ts in or de r to
avoid a default of the app lications and th e products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Semiconductors products are sold subje ct to the general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless other wise
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as su ch is
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In the event that customer uses the product for design-in
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© NXP B.V. 2010
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The information presented in this do cum en t d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/pp13 Date of release:1996 Jul 30