Order this document by 2N5655/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 - 300 - 350 VOLTS 20 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII * Excellent DC Current Gain -- hFE = 30 - 250 @ IC = 100 mAdc * Current-Gain -- Bandwidth Product -- fT = 10 MHz (Min) @ IC = 50 mAdc MAXIMUM RATINGS (1) Rating Symbol 2N5655 2N5656 2N5657 Unit VCEO 250 300 350 Vdc Collector-Base Voltage VCB 275 325 375 Vdc Emitter-Base Voltage VEB 6.0 Vdc Collector Current -- Continuous Peak IC 0.5 1.0 Adc Base Current IB 0.25 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 Watts W/_C TJ, Tstg - 65 to + 150 _C Collector-Emitter Voltage Operating and Storage Junction Temperature Range CASE 77-08 TO-225AA TYPE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JC 6.25 _C/W Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 40 30 50 mH X 20 200 Hg RELAY 10 TO SCOPE + 25 50 V Y 300 0 + 6.0 V 50 75 100 TC, CASE TEMPERATURE (C) 125 Figure 1. Power Derating - 1.0 150 Figure 2. Sustaining Voltage Test Circuit Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. REV 3 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 2N5655 2N5656 2N5657 VCEO(sus) 250 300 350 -- -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 2N5655 2N5656 2N5657 V(BR)CEO 250 300 350 -- -- -- Vdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) 2N5655 2N5656 2N5657 -- -- -- 0.1 0.1 0.1 Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) (VCE = 300 Vdc, VEB(off) = 1.5 Vdc) (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) (VCE = 200 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 -- -- -- -- -- -- 0.1 0.1 0.1 1.0 1.0 1.0 Collector Cutoff Current (VCB = 275 Vdc, IE = 0) (VCB = 325 Vdc, IE = 0) (VCB = 375 Vdc, IE = 0) 2N5655 2N5656 2N5657 -- -- -- 10 10 10 -- 10 25 30 15 5.0 -- 250 -- -- -- -- -- 1.0 2.5 10 VBE -- 1.0 Vdc Current-Gain -- Bandwidth Product (2) (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) fT Cob 10 -- MHz -- 25 pF Small-Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 -- -- ICEO mAdc ICEX mAdc Adc ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO Adc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 250 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (1) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc, IB = 100 mAdc) -- VCE(sat) Base-Emitter Voltage (1) (IC = 100 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Vdc * Indicates JEDEC Registered Data for 2N5655 Series. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) fT is defined as the frequency at which |hfe| extrapolates to unity. 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 10 s 0.5 500 s TJ = 150C 0.2 1.0 ms dc 0.1 Second Breakdown Limit Thermal Limit @ TC = 25C Bonding Wire Limit Curves apply below rated VCEO 2N5655 2N5656 2N5657 0.05 0.02 0.01 20 30 40 60 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) v 600 Figure 3. Active-Region Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data 300 hFE , DC CURRENT GAIN 200 VCE = 10 V VCE = 2.0 V TJ = +150C 100 70 +100C 50 + 25C 30 20 - 55C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 70 100 200 300 500 Figure 4. Current Gain 1.0 300 TJ = + 25C 200 Cib VBE(sat) @ IC/IB = 10 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 100 70 50 30 20 TJ = + 25C Cob IC/IB = 5.0 0 10 20 50 100 200 300 30 IC, COLLECTOR CURRENT (mA) 10 0.1 500 0.2 Figure 5. "On" Voltages 100 10 1.0 IC/IB = 10 VCC = 300 V, VBE(off) = 2.0 V (2N5656, 2N5657, only) VCC = 100 V, VBE(off) = 0 V IC/IB = 10 5.0 t, TIME ( s) tr 2.0 t, TIME ( s) 50 Figure 6. Capacitance 10 5.0 0.5 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) td ts 2.0 tf 1.0 VCC = 100 V 0.5 0.1 0.05 0.01 1.0 VCC = 300 V (Type 2N5656, 2N5657, only) 0.2 0.02 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 7. Turn-On Time Motorola Bipolar Power Transistor Device Data 200 500 0.1 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500 Figure 8. Turn-Off Time 3 PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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