LTC3862-2
27
38622fa
For more information www.linear.com/LTC3862-2
applicaTions inForMaTion
The saturation current rating for the inductor should be
determined at the minimum input voltage (which results
in the highest duty cycle and maximum input current),
maximum output current and the maximum expected
core temperature. The saturation current ratings for most
commercially available inductors drop at high temperature.
To verify safe operation, it is a good idea to characterize
the inductor’s core/winding temperature under the fol-
lowing conditions: 1) worst-case operating conditions,
2) maximum allowable ambient temperature and 3) with
the power supply mounted in the final enclosure. Thermal
characterization can be done by placing a thermocouple
in intimate contact with the winding/core structure, or by
burying the thermocouple within the windings themselves.
Remember that a single-ended boost converter is not
short-circuit protected, and that under a shorted output
condition, the output current is limited only by the input
supply capability. For applications requiring a step-up
converter that is short-circuit protected, consider using
a SEPIC or forward converter topology.
Power MOSFET Selection
The peak-to-peak gate drive level is set by the INTVCC
voltage is 10V for the LTC3862-2 under normal operat-
ing conditions. Selection criteria for the power MOSFETs
include the RDS(ON), gate charge QG, drain-to-source
breakdown voltage BVDSS, maximum continuous drain
current ID(MAX), and thermal resistances RTH(JA) and
RTH(JC)—both junction-to-ambient and junction-to-case.
The gate driver for the LTC3862-2 consists of PMOS pull-
up and NMOS pull-down devices, allowing the full INTVCC
voltage to be applied to the gates during power MOSFET
switching. Nonetheless, care must be taken to ensure
that the minimum gate drive voltage is still sufficient to
full enhance the power MOSFET. Check the MOSFET data
sheet carefully to verify that the RDS(ON) of the MOSFET
is specified for a voltage less than or equal to the nominal
INTVCC voltage of 10V. For applications that require a power
MOSFET rated at 5V, please refer to the LTC3862 data sheet.
Also pay close attention to the BVDSS specifications for
the MOSFETs relative to the maximum actual switch volt-
age in the application. Check the switching waveforms of
the MOSFET directly on the drain terminal using a single
probe and a high bandwidth oscilloscope. Ensure that the
drain voltage ringing does not approach the BVDSS of the
MOSFET. Excessive ringing at high frequency is normally
an indicator of too much series inductance in the high di/
dt current path that includes the MOSFET, the boost diode,
the output capacitor, the sense resistor and the PCB traces
connecting these components.
The GATE of MOSFET Q1 could experience transient volt-
age spikes during turn-on and turn-off of the MOSFET,
due to parasitic lead inductance and improper PCB layout.
These voltage spikes could exceed the absolute maximum
voltage ratings of LTC3862’s GATE pin. The GATE pins are
rated for an absolute maximum voltage of –0.3V minimum
and 11V maximum. Hence it is recommended to add an
external buffer close to the GATE of the MOSFET as shown
in Figure 19.
Finally, check the MOSFET manufacturer’s data sheet for
an avalanche energy rating (EAS). Some MOSFETs are not
rated for body diode avalanche and will fail catastrophi-
cally if the VDS exceeds the device BVDSS, even if only by
a fraction of a volt. Avalanche-rated MOSFETs are better
able to sustain high frequency drain-to-source ringing near
the device BVDSS during the turn-off transition.
Calculating Power MOSFET Switching and Conduction
Losses and Junction Temperatures
In order to calculate the junction temperature of the power
MOSFET, the power dissipated by the device must be known.
This power dissipation is a function of the duty cycle, the
load current and the junction temperature itself (due to
LTC3862-2
GATE1, 2
VOUT
RSENSE
COUT
38622 F19
L
Q2A
PBS4140DPN
Q1
Q2B
10Ω
PGND
SGND
INTVCC
VIN
Figure 19. External Buffer Circuit