VVZ 24 IdAVM = 27 A VRRM = 1200-1600 V Three Phase Half Controlled Rectifier Bridge VRSM VDSM VRRM VDRM V V 1300 1500 1700 1200 1400 1600 Type 3 2 VVZ 24-12io1 VVZ 24-14io1 VVZ 24-16io1 6 1 1 5 5 7 4 4 3 2 6 7 8 8 Symbol Conditions IdAV IdAVM IFRMS, ITRMS TK = 100C; module module per leg IFSM, ITSM TVJ = 45C; VR = 0 Maximum Ratings 21 27 16 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 290 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 430 A2s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 365 350 A2s A2 s 150 A/s Features I2t Applications (di/dt)cr (dv/dt)cr TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 s VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/3 * IdAV diG/dt = 0.3 A/s A/s 1000 V/s 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ 2-2.5 18-22 28 Nm lb.in. g TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) VRGM PGM TVJ = TVJM IT = ITAVM tp = 30 s tp = 500 s tp = 10 ms PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Electric drives and auxiliaries Advantages 500 Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Soldering terminals UL registered E 72873 Easy to mount with two screws Space and weight savings Improved temperature and power cycling Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20080527b 1-3 VVZ 24 Symbol Conditions Characteristic Values IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 30 A, TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) VGT VD = 6 V; IGT VD = 6 V; TVJ TVJ TVJ TVJ TVJ VGD IGD TVJ = TVJM; TVJ = TVJM; IL IG = 0.3 A; tG = 30 s diG/dt = 0.3 A/s IH TVJ = TVJM TVJ = 25C 5 0.3 mA mA 1.45 V 1 V 16 m 1.0 1.2 65 80 50 V V mA mA mA VD = 2/3 VDRM VD = 2/3 VDRM 0.2 5 V mA TVJ = 25C TVJ = -40C TVJ = 125C 150 200 100 mA mA mA TVJ = 25C; VD = 6 V; RGK = 100 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/s 2 s tq Qr TVJ = 125C; IT = 15 A, tp = 300 s, -di/dt = 10 A/s VR = 100 V, dv/dt = 20 V/s, VD = 2/3 VDRM typ. 150 75 s C RthJC per per per per 2.1 0.35 2.7 0.45 K/W K/W K/W K/W RthJH dS dA a = 25C = -40C = 25C = -40C = 125C thyristor (diode); DC current module thyristor (diode); DC current module Creeping distance on surface Creepage distance in air Max. allowable acceleration 7 mm 7 mm 50 m/s2 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20080527b 2-3 VVZ 24 10 1: IGT, 2: IGT, 3: IGT, V VG TVJ = 125C TVJ = 25C TVJ = -40C 1 1 2 3 6 4 0.1 Fig. 1 Surge overload current per chip IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per chip 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 125C 1 10 5 100 1000 IG mA Fig. 3 Gate trigger characteristics Triggering Fig. 4 Power dissipation versus direct output current and ambient temperature 3 ZthJK K/W ZthJK 2 Constants for ZthJK calculation 1 i 0 10-3 1 2 3 10-2 10-1 100 101 Rthi (K/W) ti (s) 0.17 1.4 1.1 0.028 0.44 2.6 102 s t Fig. 5 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20080527b 3-3