© 2008 IXYS All rights reserved 1 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20080527b
VVZ 24
IdAVM = 27 A
VRRM = 1200-1600 V
VRSM VRRM Type
VDSM VDRM
VV
1300 1200 VVZ 24-12io1
1500 1400 VVZ 24-14io1
1700 1600 VVZ 24-16io1
Symbol Conditions Maximum Ratings
IdAV TK = 100°C; module 21 A
IdAVM module 27 A
IFRMS, ITRMS per leg 16 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 320 A
TVJ = TVJM t = 10 ms (50 Hz), sine 270 A
VR = 0 t = 8.3 ms (60 Hz), sine 290 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 430 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 365 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 350 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 50 A 150 A/μs
f =400 Hz, tP =200 μs
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 1/3 • IdAV 500 A/μs
diG/dt = 0.3 A/μs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/μs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp =30μs≤10 W
IT = ITAVM tp = 500 μs≤5W
tp =10ms ≤1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight typ. 28 g
Features
●Package with DCB ceramic base plate
●Isolation voltage 3600 V~
●Planar passivated chips
●Soldering terminals
●UL registered E 72873
Applications
●Input rectifier for switch mode power
supplies (SMPS)
●Softstart capacitor charging
●Electric drives and auxiliaries
Advantages
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Three Phase Half Controlled
Rectifier Bridge
2
1
34
5678
2
8
5
7
4
361
© 2008 IXYS All rights reserved 2 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20080527b
VVZ 24
Symbol Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM ≤5mA
TVJ = 25°C≤0.3 mA
VF, VTIF, IT = 30 A, TVJ = 25°C≤1.45 V
VT0 For power-loss calculations only 1 V
rT(TVJ = 125°C) 16 mΩ
VGT VD = 6 V; TVJ = 25°C≤1.0 V
TVJ = -40°C≤1.2 V
IGT VD = 6 V; TVJ = 25°C≤65 mA
TVJ = -40°C≤80 mA
TVJ = 125°C≤50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM ≤5mA
ILIG = 0.3 A; tG = 30 μsT
VJ = 25°C≤150 mA
diG/dt = 0.3 A/μsT
VJ = -40°C≤200 mA
TVJ = 125°C≤100 mA
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM ≤2μs
IG = 0.3 A; diG/dt = 0.3 A/μs
tqTVJ = 125°C; IT = 15 A, tp = 300 μs, -di/dt = 10 A/μs typ. 150 μs
QrVR = 100 V, dv/dt = 20 V/μs, VD = 2/3 VDRM 75 μC
RthJC per thyristor (diode); DC current 2.1 K/W
per module 0.35 K/W
RthJH per thyristor (diode); DC current 2.7 K/W
per module 0.45 K/W
dSCreeping distance on surface 7 mm
dACreepage distance in air 7 mm
aMax. allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
© 2008 IXYS All rights reserved 3 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20080527b
VVZ 24
Fig. 1 Surge overload current per chip
IFSM: Crest value, t: duration
Fig. 3 Gate trigger characteristics
Triggering
Fig. 2 I2t versus time (1-10 ms)
per chip
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Transient thermal impedance junction to heatsink
Constants for ZthJK calculation
iR
thi (K/W) ti (s)
1 0.17 0.028
2 1.4 0.44
3 1.1 2.6
t
s
10-3 10-2 10-1 100101102
0
1
2
3
ZthJK
ZthJK
K/W
1 10 100 1000
0.1
1
10
IG
VG
mA
1: IGT,T
VJ =125°C
2: IGT,T
VJ =25°C
3: IGT,T
VJ =-40°C
V
4: PGAV =0.5W
5: PGM =1W
6: PGM =10W
IGD,T
VJ =125°C
4
2
1
5
6
3
