SILICON EPITAXIAL
NPN TRANSISTOR
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Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 8104
Issue 1
2N4912
• Low Saturation Voltage Transistor
In A Hermetic Metal Package
• Designed For Driver Circuits, Switching
and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector - Base Voltage 80V
VCEO Collector - Emitter Voltage 80V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 1.0A
IB Base Current 1.0A
PD Total Power Dissipation at Tc = 25°C 25W
Derate Above 25°C 0.143W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters Min. Typ. Max.
Unit
s
RθJC Thermal Resistance, Junction To Case 7 °C/W
SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 8104
Issue 1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ.
Max.
Units
V(BR)CEO*
Collector-Emitter
Breakdown Voltage IC = 10mA IB = 0 80 V
ICEO Collector-Emitter Cut-Off
Current VCE = 40V IB = 0 0.5
VCE = 80V VBE = -1.5V 0.1
VCE = 80V VBE = -1.5V
ICEX Collector-Emitter Cut-Off
Current
TC = 150°C 1.0
IEBO Emitter-Base Cut-Off
Current VEB = 5V IC = 0 1.0
ICBO Collector-Base Cut-Off
Current VCB = 80V IE = 0 0.1
mA
VBE* Base-Emitter Voltage IC = 1.0A VCE = 1.0V 1.3
VCE(sat)* Collector-Emitter
Saturation Voltage IC = 1.0A IB = 100mA 0.6
VBE(sat)* Base-Emitter Saturated
Voltage IC = 1.0A IB = 100mA 1.3
V
IC = 50mA VCE = 1.0V 40
IC = 500mA VCE = 1.0V 20 100
hFE* Forward-current transfer
ratio
IC = 1.0A VCE = 1.0V 10
DYNAMIC CHARACTERISTICS
IC = 250mA VCE = 10V
fT Transition Frequency f = 1.0MHz 3.0 22 MHz
IC = 250mA VCE = 10V
hfe Small-Signal Current Gain f = 1.0KHz 25 70
IE = 0 VCB = 10V
Cobo Output Capacitance f = 1.0MHz 45 100 pF
* Pulse Test: tp = 300us, δ ≤ 2%
SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 8104
Issue 1
Mechanical Data
Dimensions in mm (inches)
24.13 (0.95)
24.63 (0.97)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
12
TO66 (TO
-
213AA)
Pin 1 - Base Pin 2 - Emitter Case - Collector
