DMG6968UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) ESD Protected Up To 2KV Qualified to AEC-Q101 Standards for High Reliability * * * Case: TSSOP-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.039 grams (approximate) D 1 2 3 4 D S1 S1 G1 D S2 S2 G2 8 7 6 5 G1 D G2 S1 N-Channel ESD PROTECTED TO 2kV Top View Top View Pin Configuration Bottom View S2 N-Channel Internal Schematic Ordering Information (Note 3) Part Number DMG6968UTS-13 Notes: Case TSSOP-8 Packaging 2500 / 13" Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 8 5 Logo N6968U Part no YY WW Xth week : 01~52 Year: "09" = 2009 1 4 Top View DMG6968UTS Document number: DS31793 Rev. 5 - 2 1 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMG6968UTS Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Unit V V IDM Value 20 12 5.2 3.5 30 Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Steady State TA = 25C TA = 70C ID Pulsed Drain Current A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range PD 1.0 W RJA TJ, TSTG 125 -55 to +150 C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS BVSGS 20 12 - 1.0 10 - V A A V VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 10V, VDS = 0V VDS = 0V, IG = 250A VGS(th) 0.35 - 0.95 V RDS (ON) - 18 21 26 23 27 34 m |Yfs| VSD - 13 0.7 1.0 S V VDS = VGS, ID = 250A VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 5V, ID = 5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 143 74 29 202 8.8 1.4 3.0 53 78 562 234 - pF pF pF nC nC nC ns ns ns ns VDS =10V, VGS = 0V f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10, RG = 6 4. Device mounted on FR-4 PCB. 5. Short duration pulse test used to minimize self-heating effect. DMG6968UTS Document number: DS31793 Rev. 5 - 2 2 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMG6968UTS 20 30 VGS = 8V 25 VGS = 3.0V 16 VGS = 2.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 4.5V VGS = 2.0V 12 15 VGS = 1.5V 10 8 TA = 150C 4 5 TA = 125C TA = 85C T A = 25C 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.05 0.04 0.03 VGS = 1.8V 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.04 VGS = 4.5V 0.03 T A = 150C T A = 125C 0.02 TA = 85C T A = 25C TA = -55C 0.01 0 0 30 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 0.04 1.4 VGS = 2.5V ID = 5.5A 1.2 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = -55C 0 0 VGS = 4.5V ID = 10A 1.0 0.03 VGS = 2.5V ID = 5.5A 0.02 VGS = 4.5V ID = 10A 0.01 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMG6968UTS Document number: DS31793 Rev. 5 - 2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature March 2012 (c) Diodes Incorporated DMG6968UTS 20 1.2 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 0.8 ID = 1mA 0.6 ID = 250A 0.4 TA = 25C 12 8 4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 100,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) f = 1MHz Ciss Coss 100 Crss 10,000 T A = 150C T A = 125C 1,000 100 T A = 85C 10 TA = 25C 10 1 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 10 DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100s PW = 10s 0.01 0.1 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) 10 RDS(on) Limited 1 2 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage P(PK), PEAK TRANSIENT POIWER (W) -ID, DRAIN CURRENT (A) 100 0 20 TJ(m ax) = 150C TA = 25C Single Pulse 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Safe Operation Area DMG6968UTS Document number: DS31793 Rev. 5 - 2 100 4 of 6 www.diodes.com 9 Single Pulse RJA = 157 C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 8 7 6 5 4 3 2 1 0 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation March 2012 (c) Diodes Incorporated DMG6968UTS r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 157C/W D = 0.02 0.01 D = 0.01 P(pk) D = Single Pulse 0.001 0.00001 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response Package Outline Dimensions D See Detail C E E1 e c b Gauge plane a A2 A D L A1 TSSOP-8L Dim Min Max Typ a 0.09 - - A 1.20 - - A1 0.05 0.15 - A2 0.825 1.025 0.925 b 0.19 0.30 - c 0.09 0.20 - D 2.90 3.10 3.025 e 0.65 - - E 6.40 - - E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm Detail C Suggested Pad Layout Y X C3 C1 C2 DMG6968UTS Document number: DS31793 Rev. 5 - 2 G Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20 5 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMG6968UTS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2012, Diodes Incorporated www.diodes.com DMG6968UTS Document number: DS31793 Rev. 5 - 2 6 of 6 www.diodes.com March 2012 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: DMG6968UTS-13