DMG6968UTS
Document number: DS31793 Rev. 5 - 2 1 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG6968UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• ESD Protected Up To 2KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TSSOP-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.039 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMG6968UTS-13 TSSOP-8 2500 / 13” Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View Internal Schematic
Bottom View
ESD PROTECTED TO 2kV
G1
S1 S2
G2
DD
N-Channel N-Channel
Top View
Pin Configuration
8
7
6
5
1
2
3
4
D
S1
S1
G1
D
S2
S2
G2
Top Vi ew
Logo
Part no
Yea r : “0 9” = 2009
Xt h w eek: 01~52
14
85
N6968U
YY WW
DMG6968UTS
Document number: DS31793 Rev. 5 - 2 2 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG6968UTS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V
Continuous Drain Current (Note 4) Steady
State TA = 25°C
TA = 70°C ID 5.2
3.5 A
Pulsed Drain Current IDM 30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 1.0 W
Thermal Resistance, Junction to Ambient @TA = 25°C RJA 125 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 20 - - V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS - - 1.0
μA VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS - - 10
μA VGS = ±10V, VDS = 0V
Gate-Source Breakdown Voltage BVSGS ±12 - - V
VDS = 0V, IG = ±250μA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
0.35 - 0.95 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON) -
-
-
18
21
26
23
27
34 m VGS = 4.5V, ID = 6.5A
VGS = 2.5V, ID = 5.5A
VGS = 1.8V, ID = 3.5A
Forward Transfer Admittance |Yfs| - 13 - S
VDS = 5V, ID = 5A
Diode Forward Voltage VSD - 0.7 1.0 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss - 143 - pF
VDS =10V, VGS = 0V f = 1.0MHz
Output Capacitance Coss - 74 - pF
Reverse Transfer Capacitance Crss - 29 - pF
Gate Resistance R
g
- 202 - VDS =0V, VGS = 0V, f = 1MHz
Total Gate Charge Q
g
- 8.8 - nC
VGS = 4.5V, VDS = 10V,
ID = 6.5A
Gate-Source Charge Q
g
s - 1.4 - nC
Gate-Drain Charge Q
g
d - 3.0 - nC
Turn-On Delay Time tD
(
on
)
- 53 - ns
VDD = 10V, VGS = 4.5V,
RL = 10, RG = 6
Turn-On Rise Time t
r
- 78 - ns
Turn-Off Delay Time tD
(
off
)
- 562 - ns
Turn-Off Fall Time tf - 234 - ns
Notes: 4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.
DMG6968UTS
Document number: DS31793 Rev. 5 - 2 3 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG6968UTS
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
AI
E
(A)
D
V = 2.0V
GS
V = 1.5V
GS
V = 4.5V
GS
V = 8V
GS
V = 2.5V
GS
V = 3.0V
GS
0 0.5 1 1.5 2
Fig. 2 T ypical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
4
8
12
16
20
I, D
AIN
EN
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs . Dr ai n Current and Gat e Volt age
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
0
0.01
0.02
0.03
0.04
048121620
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs . Dr ai n Current and Temp eratur e
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig . 5 On - R esistance Var iation wit h Tem per ature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
, D
AIN-S
E
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5.5A
GS
D
0
0.01
0.02
0.03
0.04
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
Ω
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5.5A
GS
D
DMG6968UTS
Document number: DS31793 Rev. 5 - 2 4 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG6968UTS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold V ariation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2
Fi g. 8 Diode For w ard Voltage vs . Cur r ent
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
048121620
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOL TAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
iss
C
rss
C
oss
f = 1MHz
0 2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
I , LEAKA
E
E
(nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
10
100
0.1 1 10 100
R
Limited
DS(on)
Fig. 11 Safe Operation Area
-DS
V , DRAIN-SOURCE VOL TAGE (V)
-I , DRAIN CURRENT (A)
D
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0
1
2
3
4
5
6
7
8
9
10
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,000
,
EAK
ANSIEN
IWE
(W)
(PK)
Single Pulse
R = 157 C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
DMG6968UTS
Document number: DS31793 Rev. 5 - 2 5 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG6968UTS
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 157°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Package Outline Dimensions
Suggested Pad Layout
TSSOP-8L
Dim Min Max Typ
a 0.09 − −
A − 1.20 −
A1 0.05 0.15 −
A2 0.825 1.025 0.925
b 0.19 0.30 −
c 0.09 0.20 −
D 2.90 3.10 3.025
e − − 0.65
E − − 6.40
E1 4.30 4.50 4.425
L 0.45 0.75 0.60
All Dimensions in mm
Dimensions Value (in mm)
X 0.45
Y 1.78
C1 7.72
C2 0.65
C3 4.16
G 0.20
L
Gauge plane
See Detail C
D
E
A1
A2
A
e
a
Detail C
E1
b
D
c
Y
C3 C1
X
C2 G
DMG6968UTS
Document number: DS31793 Rev. 5 - 2 6 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG6968UTS
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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