SGP20N60
SGW20N60
1 Rev. 2.4 Nov 09
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C VCE(sat) Tj Marking Package
SGP20N60 600V 20A 2.4V
150°C G20N60 PG-TO-220-3-1
SGW20N60 600V 20A 2.4V
150°C G20N60 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current
TC = 25°C
TC = 100°C
IC
40
20
Pulsed collector current, tp limited by Tjmax ICpuls 80
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
- 80
A
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse
IC = 20 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
EAS 115 mJ
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
tSC 10
µs
Power dissipation
TC = 25°C
Ptot 179 W
Operating junction and storage temperature Tj , Tstg -55...+150
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Ts 260
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-220-3-1 PG-TO-247-3
SGP20N60
SGW20N60
2 Rev. 2.4 Nov 09
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 0.7
Thermal resistance,
junction – ambient
RthJA PG-TO-220-3-1
PG-TO-247-3-21
62
40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA600 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=20A
Tj=25°C
Tj=150°C
1.7
-
2
2.4
2.4
2.9
Gate-emitter threshold voltage VGE(th) IC=700µA,VCE=VGE 3 4 5
V
Zero gate voltage collector current
ICES VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
40
2500
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=20A - 14 - S
Dynamic Characteristic
Input capacitance Ciss - 1100 1320
Output capacitance Coss - 107 128
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 63 76
pF
Gate charge QGate VCC=480V, IC=20A
VGE=15V
- 100 130 nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE PG-TO-220-3-1
PG-TO-247-3-21
-
-
7
13
-
-
nH
Short circuit collector current2) IC(SC) VGE=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
- 200 - A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
SGP20N60
SGW20N60
3 Rev. 2.4 Nov 09
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 36 46
Rise time tr - 30 36
Turn-off delay time td(off) - 225 270
Fall time tf - 54 65
ns
Turn-on energy Eon - 0.44 0.53
Turn-off energy Eoff - 0.33 0.43
Total switching energy Ets
Tj=25°C,
VCC=400V,IC=20A,
VGE=0/15V,
RG=16Ω,
L
σ
1) =180nH,
C
σ
1) =900pF
Energy losses include
“tail” and diode
reverse recovery. - 0.77 0.96
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 36 46
Rise time tr - 30 36
Turn-off delay time td(off) - 250 300
Fall time tf - 63 76
ns
Turn-on energy Eon - 0.67 0.81
Turn-off energy Eoff - 0.49 0.64
Total switching energy Ets
Tj=150°C
VCC=400V,IC=20A,
VGE=0/15V,
RG=16Ω,
L
σ
1) =180nH,
C
σ
1) =900pF
Energy losses include
“tail” and diode
reverse recovery. - 1.12 1.45
mJ
1) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
SGP20N60
SGW20N60
4 Rev. 2.4 Nov 09
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
110A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0.1A
1A
10A
100A
DC
1ms
200µs
50µs
15µs
tp=4µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
20W
40W
60W
80W
100W
120W
140W
160W
180W
200W
IC, COLLECTOR CURRENT
25°C 50°C 75°C 100°C 125°C
0A
10A
20A
30A
40A
50A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Ic
Ic
SGP20N60
SGW20N60
5 Rev. 2.4 Nov 09
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V
0A
10A
20A
30A
40A
50A
60A
15V
13V
11V
9V
7V
5V
VGE=20V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V
0A
10A
20A
30A
40A
50A
60A
15V
13V
11V
9V
7V
5V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V 10V
0A
10A
20A
30A
40A
50A
60A
70A
-55°C
+150°C
Tj=+25°C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
IC = 20A
IC = 40A
SGP20N60
SGW20N60
6 Rev. 2.4 Nov 09
t, SWITCHING TIMES
10A 20A 30A 40A
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
0Ω10Ω20Ω30Ω40Ω50Ω60Ω
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 20A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 20A, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.7mA)
SGP20N60
SGW20N60
7 Rev. 2.4 Nov 09
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A 40A 50A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
Eon*
Eoff
Ets*
E, SWITCHING ENERGY LOSSES
0Ω10Ω20Ω30Ω40Ω50Ω60Ω
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
Ets*
Eon*
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 20A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
Ets*
Eon*
Eoff
ZthJC, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1s
10-4K/W
10-3K/W
10-2K/W
10-1K/W
100K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 20A, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(1/W)
τ
, (s)
0.1882 0.1137
0.3214 2.24*10-2
0.1512 7.86*10-4
0.0392 9.41*10-5
SGP20N60
SGW20N60
8 Rev. 2.4 Nov 09
VGE, GATE-EMITTER VOLTAGE
0nC 25nC 50nC 75nC 100nC 125nC
0V
5V
10V
15V
20V
25V
480V
120V
C, CAPACITANCE
0V 10V 20V 30V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC = 20A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
tsc, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V 15V
0µs
5µs
10µs
15µs
20µs
25µs
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
10V 12V 14V 16V 18V 20V
0A
50A
100A
150A
200A
250A
300A
350A
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V, Tj = 150°C)
SGP20N60
SGW20N60
9 Rev. 2.4 Nov 09
PG-TO220-3-1
SGP20N60
SGW20N60
10 Rev. 2.4 Nov 09
SGP20N60
SGW20N60
11 Rev. 2.4 Nov 09
Figure A. Definition of switching times
Figure B. Definition of switching losses
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=180nH
and Stray capacity Cσ =900pF.
SGP20N60
SGW20N60
12 Rev. 2.4 Nov 09
Published by
Infineon Technologies AG
81726 Munich, Germany
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