BAT85S
Vishay Telefunken
1 (4)
www.vishay.de •FaxBack +1-408-970-5600
Document Number 85513
Rev. 3, 01-Apr-99
Schottky Barrier Diode
Features
D
Integrated protection ring against
static discharge
D
Very low forward voltage
Applications
Applications where a very low forward voltage
is required 94 9367
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Reverse voltage VR30 V
Peak forward surge current tp ≤ 10 ms IFSM 5 A
Repetitive peak forward current tp≤1s IFRM 300 mA
Forward current IF200 mA
Average forward current PCB mounting, l=4mm;
VRWM=25V, Tamb=50
°
CIFAV 200 mA
Junction temperature Tj125
°
C
Storage temperature range Tstg –65...+150
°
C
Maximum Thermal Resistance
Tj = 25
_
CParameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant RthJA 350 K/W
BAT85S
Vishay Telefunken
Rev. 3, 01-Apr-992 (4)
www.vishay.de •FaxBack +1-408-970-5600 Document Number 85513
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=0.1mA VF240 mV
g
IF=1mA VF320 mV
IF=10mA VF400 mV
IF=30mA VF500 mV
IF=100mA VF800 mV
Reverse current VR=25V IR2
m
A
Diode capacitance VR=1V, f=1MHz CD10 pF
Characteristics (Tj = 25
_
C unless otherwise specified)
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15822
VR = 30 V
P – Reverse Power Dissipation ( mW )
R
540K/W
PR–Limit
@100%VR
PR–Limit
@80%VR
RthJA=
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1
10
100
1000
25 50 75 100 125 150
1
10
100
1000
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15823
VR = VRRM
m
I – Reverse Current ( A )
R
Figure 2. Reverse Current vs. Junction Temperature
0 0.5 1.0 1.5
I – Forward Current ( A )
VF – Forward Voltage ( V )15824
F
Tj=25°C
Tj=150°C
0.1
1
10
100
1000
Figure 3. Forward Current vs. Forward Voltage
0
1
2
3
4
5
6
7
8
9
10
0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )15825
C – Diode Capacitance ( pF )
D
f=1MHz
Figure 4. Diode Capacitance vs. Reverse Voltage
BAT85S
Vishay Telefunken
3 (4)
www.vishay.de •FaxBack +1-408-970-5600
Document Number 85513
Rev. 3, 01-Apr-99
Dimensions in mm
Cathode Identification
∅ 1.7 max.
∅ 0.55 max.
3.9 max.26 min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g 26 min.
BAT85S
Vishay Telefunken
Rev. 3, 01-Apr-994 (4)
www.vishay.de •FaxBack +1-408-970-5600 Document Number 85513
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use V ishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
