Features Description * AC Input Response (FOD814) * Current Transfer Ratio in Selected Groups: The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FOD814: 20-300% FOD814A: 50-150% FOD817: 50-600% FOD817A: 80-160% FOD817B: 130-260% FOD817C: 200-400% FOD817D: 300-600% * Minimum BVCEO of 70 V Guaranteed * Safety and Regulatory Approvals - UL1577, 5,000 VACRMS for 1 Minute - DIN EN/IEC60747-5-5 Applications FOD814 Series * AC Line Monitor * Unknown Polarity DC Sensor * Telephone Line Interface FOD817 Series * Power Supply Regulators * Digital Logic Inputs * Microprocessor Inputs Functional Block Diagram ANODE, CATHODE 1 4 COLLECTOR CATHODE, ANODE 2 3 EMITTER ANODE 1 CATHODE 2 FOD814 3 EMITTER FOD817 Figure 1. Schematic (c)2006 Semiconductor Components Industries, LLC. July-2018, Rev. 5 4 COLLECTOR 4 1 Figure 2. Package Outlines Publication Order Number: FOD814/D FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers FOD814 Series, FOD817 Series 4-Pin DIP Phototransistor Optocouplers As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I-IV I-III < 300 VRMS Climatic Classification 30/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 8000 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option W, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm TS Case Temperature(1) 175 C IS,INPUT Current(1) 400 mA 700 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) Note: 1. Safety limit values - maximum values allowed in the event of a failure. www.onsemi.com 2 > 1011 FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C Unless otherwise specified. Symbol Value Parameter FOD814 FOD817 Unit Total Device TSTG Storage Temperature TOPR Operating Temperature TJ TSOL JC PTOT -55 to +150 -55 to +105 Junction Temperature C -55 to +110 C -55 to +125 C 260 for 10 seconds C Junction-to-Case Thermal Resistance 210 C/W Total Device Power Dissipation 200 mW Lead Solder Temperature EMITTER IF Continuous Forward Current VR Reverse Voltage 50 50 mA 6 V Power Dissipation 70 mW Derate Above 100C 1.7 mW/C VCEO Collector-Emitter Voltage 70 V VECO Emitter-Collector Voltage 6 V Continuous Collector Current 50 mA Collector Power Dissipation 150 mW Derate Above 90C 2.9 mW/C PD DETECTOR IC PC www.onsemi.com 3 FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Absolute Maximum Ratings Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit EMITTER VF Forward Voltage IR Reverse Current Ct Terminal Capacitance FOD814 IF = 20 mA 1.2 1.4 FOD817 IF = 20 mA 1.2 1.4 FOD817 VR = 4.0 V FOD814 V = 0, f = 1 kHz 50 250 FOD817 V = 0, f = 1 kHz 30 250 FOD814 VCE = 20 V, IF = 0 100 FOD817 VCE = 20 V, IF = 0 100 10 V A pF DETECTOR ICEO Collector Dark Current BVCEO Collector-Emitter Breakdown Voltage FOD814 IC = 0.1 mA, IF = 0 70 FOD817 IC = 0.1 mA, IF = 0 70 BVECO Emitter-Collector Breakdown Voltage FOD814 IE = 10 A, IF = 0 6 FOD817 IE = 10 A, IF = 0 6 nA V V DC Transfer Characteristics Symbol Parameter Device FOD814 FOD814A CTR Current Transfer Ratio(2) Test Conditions IF = 1 mA, VCE = 5 V Max. 20 300 50 150 FOD817 50 600 80 160 130 260 200 400 IF = 5 mA, VCE = 5 V FOD817C FOD817D Collector-Emitter Saturation Voltage Typ. FOD817A FOD817B VCE(SAT) Min. 300 Unit % 600 FOD814 IF = 20 mA, IC = 1 mA 0.1 0.2 FOD817 IF = 20 mA, IC = 1 mA 0.1 0.2 Min. Typ. Max. 15 80 V AC Transfer Characteristics Symbol Parameter Device fC Cut-Off Frequency FOD814 tr Response Time (Rise) FOD814, FOD817 tf Response Time (Fall) FOD814, FOD817 Test Conditions VCE = 5 V, IC = 2 mA, RL = 100 , -3 dB VCE = 2 V, IC = 2 mA, RL = 100 (3) Notes: 2. Current Transfer Ratio (CTR) = IC / IF x 100%. 3. For test circuit setup and waveforms, refer to page 7. www.onsemi.com 4 Unit kHz 4 18 s 3 18 s FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Electrical Characteristics TA = 25C unless otherwise specified. Isolation Characteristics Symbol Parameter Device Test Conditions Min. VISO Input-Output Isolation Voltage(4) FOD814, FOD817 f = 60 Hz, t = 1 minute, II-O 2 A 5000 RISO Isolation Resistance FOD814, FOD817 VI-O = 500 VDC CISO Isolation Capacitance FOD814, FOD817 VI-O = 0, f = 1 MHz Note: 4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. www.onsemi.com 5 Typ. Max. Unit VACRMS 5x1010 1x1011 0.6 1.0 pf FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Electrical Characteristics (Continued) TA = 25C unless otherwise specified. 200 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C) COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR POWER DISSIPATION PC (mW) TA = 25C unless otherwise specified. 200 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C) Fig. 3 Collector Power Dissipation vs. Ambient Temperature (FOD814) Fig. 4 Collector Power Dissipation vs. Ambient Temperature (FOD817) Ic = 0.5mA 1mA 3mA 5mA 5 4 Ta = 25C 7mA 3 2 1 0 0 2.5 5.0 7.5 10.0 12.5 FORWARD CURRENT IF (mA) TA = 110 C 75oC o 50 C 25oC 0oC o 0.1 0.5 -30 C o -55 C 1.0 1.5 o 50 C 10 25oC 0oC o -30 C 1 o -55 C 1.0 1.5 2.0 Fig. 6 Forward Current vs. Forward Voltage CURRENT TRANSFER RATIO CTR ( %) o 1 75oC FORWARD VOLTAGE VF (V) 100 10 o TA = 105 C 0.1 0.5 15.0 Fig. 5 Collector-Emitter Saturation Voltage vs. Forward Current FORWARD CURRENT IF (mA) (FOD814) 100 FORWARD CURRENT IF (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 2.0 FORWARD VOLTAGE VF (V) Fig. 7 Forward Current vs. Forward Voltage (FOD817) www.onsemi.com 6 140 120 VCE = 5V Ta= 25C 100 FOD817 80 60 40 FOD814 20 0 0. 1 0.2 0.5 1 2 5 10 20 50 100 FORWARD CURRENT IF (mA) Fig. 8 Current Transfer Ratio vs. Forward Current FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Typical Electrical/Optical Characteristic Curves TA = 25C unless otherwise specified. 30 50 I F = 30mA 40 20 m A 30 Pc (M AX.) 10mA 20 I IF = 30mA COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta= 25C 5mA 10 Pc(MAX.) 20 15 10mA 10 5m A 5 1m A 0 0 0 0 10 20 30 40 50 60 70 80 90 100 Fig. 10 Collector Current vs. Collector-Emitter Voltage (FOD817) Fig. 9 Collector Current vs. Collector-Emitter Voltage (FOD814) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 160 FOD814 IF = 1 mA VCE = 5V 140 120 100 80 FOD817 IF = 5mA VCE = 5V 60 40 20 0 -60 -40 -20 0 0.12 I = 20mA F 0.10 IC = 1mA 0.08 0.06 0.04 0.02 0.00 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C) 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C) Fig. 12 Collector-Emitter Saturation Voltage vs. Ambient Temperature Fig. 11 Relative Current Transfer Ratio vs. Ambient Temperature 100 LED POWER DISSIPATION PLED (mW) LED POWER DISSIPATION PLED (mW) 10 20 30 40 50 60 70 80 90 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) RELATIVE CURRENT TRANSFER RATIO (%) Ta = 25C 20mA 25 80 60 40 20 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C) Fig. 13 LED Power Dissipation vs. Ambient Temperature (FOD814) 100 80 60 40 20 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C) Fig. 14 LED Power Dissipation vs. Ambient Temperature (FOD817) www.onsemi.com 7 FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Typical Electrical/Optical Characteristic Curves (Continued) TA = 25C unless otherwise specified. RESPONSE TIME (s) 50 20 VCE = 2V Ic= 2mA Ta = 25C tr VOLTAGE GAIN AV (dB) 100 tf 10 5 td 2 ts 1 0.5 VCE = 2V Ic = 2mA Ta = 25C 0 RL=10k 1k 100 -10 0.2 -20 0.2 0.1 0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (k) 10 1000 Fig. 16 Frequency Response Fig. 15 Response Time vs. Load Resistance COLLECTOR DARK CURRENT ICEO (nA) 10 100 0.5 15 2 FREQUENCY f (kHz) 10000 VCE = 20V 1000 100 10 1 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C) Fig. 17 Collector Dark Current vs. Ambient Temperature Test Circuit for Frequency Response Test Circuit for Response Time Vcc Input RD Input Vcc Output RL Output RD 10% 90% td ts tr tf www.onsemi.com 8 RL Output FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Typical Electrical/Optical Characteristic Curves (Continued) Temperature (C) Max. Ramp-up Rate = 3C/S TP Max. Ramp-down Rate = 6C/S 260 240 TL 220 Tsmax 200 180 Preheat Area 160 Tsmin 140 120 100 80 60 40 20 0 120 tP tL ts 240 360 Time 25C to Peak Time (seconds) Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150C Temperature Max. (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second max. Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second max. Time 25C to Peak Temperature 8 minutes max. Figure 20. Reflow Profile www.onsemi.com 9 FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Reflow Profile Part Number Package Packing Method FOD817X DIP 4-Pin Tube (100 units per tube) FOD817XS SMT 4-Pin (Lead Bend) Tube (100 units per tube) FOD817XSD SMT 4-Pin (Lead Bend) Tape and Reel (1,000 units per reel) FOD817X300 DIP 4-Pin, DIN EN/IEC60747-5-5 option Tube (100 units per tube) FOD817X3S SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tube (100 units per tube) FOD817X3SD SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tape and Reel (1,000 units per reel) FOD817X300W DIP 4-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 option Tube (100 units per tube) Note: The product orderable part number system listed in this table also applies to the FOD814 products. "X" denotes the Current Transfer Ratio (CTR) options Marking Information 4 5 V X ZZ Y 3 817 6 2 1 Figure 21. Top Mark Definitions 1 ON Semiconductor Logo 2 Device Number 3 VDE Mark (Note: Only appears on parts ordered with VDE option. See order entry table) 4 One Digit Year Code 5 Two Digit Work Week Ranging from `01' to `53' 6 Assembly Package Code www.onsemi.com 10 FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Ordering Information P2 O1.550.05 P0 1.750.1 F W B0 A0 P1 0.30.05 K0 Figure 22. Carrier Tape Specification Symbol Description Dimensions in mm (inches) W Tape wide 16 0.3 (0.63) P0 Pitch of sprocket holes F P2 Distance of compartment 7.5 0.1 (0.295) 2 0.1 (0.079) P1 Distance of compartment to compartment 12 0.1 (0.472) A0 Compartment 4 0.1 (0.15) 10.45 0.1 (0.411) B0 5.30 0.1 (0.209) K0 4.25 0.1 (0.167) www.onsemi.com 11 FOD814 Series, FOD817 Series -- 4-Pin DIP Phototransistor Optocouplers Carrier Tape Specifications ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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