& HERMETIC SILICON OPTOELECTRQMICS PHOTOTRANSISTOR BPW36/BPW37 $0 _ el The BPW36/37 are silicon phototransisters mounted in narrow angle TO-18 packages. _ > SEATING PLANE ts h t - L 4 ceo oo SYMBOL NOES MLLMETERS NOTES = Hermetically sealed package x me | pss bart Tear @ Narrow reception angle b__| 016 | .021 [ 407 [ 533 @ European Pro Electron registered op | 209 | 230 | 5.31 | 5.384 @D, | 178 | 195 | 452 | 4.96 e 100 NOM 2.54 NOM 2 e, 050 NOM 1.27 NOM 2 A | 030 [ | 76 j 036 | 046 | 92 | 1.16 k 028 | .048 71 1.22 41 [500 [| [127 | a 45 [ ase | a5 | ase [3 (COLLECTOR CONNECTED TO CASE) (3) (2) ST1607 EM NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + .025 .000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB. & HERMETIC SILICON Storage Temperature ....0 6. ec ee ete bene teaver sntnnnnes 65C to +150C Operating Temperature ..0 00... eect eee e crete n eter enenennes 65C to +125C Soldering: Lead Temperature (Iron) 60... cece cece eee e cette ee neevenaenens 240C for 5 sec.**89 Lead Temperature (FIOW) 0.2.0.0... 0... cece ec ccc ee cee cn eee eeetteneenvnees 260C for 10 sec.49 Collector-Emitter Breakdown Voltage .... 0.0.6... ccc cence cent nent eeeeetbeneaees 45 Voits Collector-Base Breakdown Voltage 0.0.2.0... 0 ccc cece cece eee n et tn eveveenycees 45 Volts Emitter-Base Breakdown Voltage . 0.0.0... 000 ccc cece cece eee ncn ee eet b eects verteneres 5 Volts Power Dissipation (T, = 25C) 0. kc ecece eee e nent et tne eneensuanees 300 mw") Power Dissipation (Te = 25C) oo. cc ccc e tree center e nee ntenenetnteneens 600 mWw PARAMETER SYMBOL |. . . TEST CONDITIONS Collector-Emitter Breakdown BVceo |, = 10 mA, Ee =0 Emitter-Base Breakdown BVeso . | = 100 pA, Ee = 0 Collector-Base Breakdown BV cso lc = 100 pA, Ee = 0 Collector-Emitter Leakage lceo nA Voc = 10V, Ee =0 Reception Angle at 4 Sensitivity 8 Degrees On-State Collector Current BPW36 lovorn . mA Ee = 3.0 mW/cm?, Voce = 5 V On-State Collector Current BPW37 lovony . mA Ee = 3.0 mW/cm?, Voe = 5 V Turn-On Time ton us I; = 2MA, Veco = 10 V, R, = 1000, Turn-Off Time tor ps I; = 2 MA, Veco = 10 V, R, = 1000 Saturation Voltage Veeisan . v I; = 1.0 mA, Ee = 3.0 mWiem? a iii . Derate power dissipation linearly 3.00mW/C above 25C ambient. . Derate power dissipation linearly 6.00mW/C above 25C case. RMA flux is recommended. . Methanol or Isopropyl alcohols are recommended as cleaning agents. . Soldering iron tip ie (1.6 mm) minimum from housing. . As long as leads are not under any stress or spring tension. . Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. . Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 3.0 mW/cr is approximately equivalent to a tungsten source, at 2870K, of 10 mW/err. QNAGVABN]- OPTOELECTRONICS T, -NORMALIZ EO LIGHT CURRENT rb z a z 3 3 e z g 4 2 m7 N a 4 = = $ z t 4a Ip NORMALIZED OARK CURRENT Eet = 20 mW/cm? Smw/cm NORMALIZED TO Vog?5 Eat = 10 mW/cem? | | Veg COLLECTOR TO EMITTER VOLTAGE Fig. 1. Light Current vs. Collector to Emitter Voltage 10 -50 (50 50 100 T - TEMPERATURE - C Fig. 3. Normalized Light Current vs. Temperature 25. oo 125 350 75 T~ TEMPERATURE -C Fig. 5. Dark Current vs. Temperature too ST1250 $T1251 1580 871252 TL -NORMALIZED LIGHT CURRENT ton and toff-NORMALIZED TURN ON AND TURN OFF TIMES eS 6 e IL - NORMALIZED LIGHT CURRENT HERMETIC SILICON PHOTOTRANSISTOR Vcr <5 Eat = 10 mW/om? wo $T1255 1 0 Ht TOTAL IRRADIANCE IN mW/om2 Fig. 2. Normalized Light Current vs. Radiation RLeik a Vee * IO VOLTS TLs2mA ton * logs Su sec Rut 10 (o I_-OUTPUT CURRENT-mA Fig. 4. Switching Times vs. Output Current loc $T1254 coxi4 = BPW36 OR NORMALIZED TO COX14 INPUT=IOmA Vee #10 VOLTS TLs100mA T=? 26C 55. 35 1S 65 a5 ws 5 25 45 T- TEMPERATURE -*C ST1253 Fig. 6. Normalized Light Current vs. Temperature Both Emitter (CQX14) and Detector (BPW36 or BPW37) at Same Temperature 3-195