1
Motorola Thyristor Device Data
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
•Blocking Voltage to 800 Volts
•On-State Current Rating of 8.0 Amperes RMS at 100°C
•Uniform Gate Trigger Currents in Three Modes
•High Immunity to dv/dt — 250 V/µs minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry Standard TO-220AB Package
•High Commutating di/dt — 6.5 A/ms minimum at 125°C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VDRM Peak Repetitive Off-State Voltage (1)
(–40 to 125°C, Sine W ave, 50 to 60 Hz, Gate Open) MAC8D
MAC8M
MAC8N
400
600
800
Volts
IT(RMS) On-State RMS Current
(60 Hz, TC = 100°C) 8.0 A
ITSM Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C) 80 A
I2tCircuit Fusing Consideration (t = 8.3 ms) 26 A2sec
PGM Peak Gate Power (Pulse Width ≤1.0 µs, TC = 80°C) 16 Watts
PG(AV) Average Gate Power (t = 8.3 ms, TC = 80°C) 0.35 Watts
TJOperating Junction Temperature Range –40 to +125 °C
Tstg Storage Temperature Range –40 to +150 °C
THERMAL CHARACTERISTICS
RθJC
RθJA Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient 2.2
62.5 °C/W
TLMaximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC8D/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
TRIACS
8 AMPERES RMS
400 thru 800
VOLTS
*Motorola preferred devices
CASE 221A-09
(TO–220AB)
Style 4
MT2
MT1
MT2
G
MT1
G
MT2
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
IDRM Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = 125°C—
——
—0.01
2.0
mA
ON CHARACTERISTICS
VTM Peak On-State Voltage*
(ITM = ±11 A Peak) — 1.2 1.6 Volts
IGT Continuous Gate T rigger Current (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
5.0
5.0
5.0
13
16
18
35
35
35
mA
IHHold Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA) — 20 40 mA
ILLatch Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–) —
—20
30 50
80
mA
VGT Gate T rigger Voltage (V D = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
Volts
DYNAMIC CHARACTERISTICS
(di/dt)cRate of Change of Commutating Current* See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, CL = 10 µF
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) LL = 40 mH
6.5 — — A/ms
dv/dt Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential W aveform, Gate Open, TJ = 125°C) 250 — — V/µs
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
120
°
Figure 1. RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
120
115
110
105
100 876543210
TC, CASE TEMPERATURE ( C)
°
Figure 2. On-State Power Dissipation
IT(RMS), ON-STATE CURRENT (AMP) 876543210
12
10
8
6
4
2
PAV, AVERAGE POWER (WATTS)
0
α
= 120, 90, 60, 30
°
α
= 180
°
α
= 30
°
DC
DC
180
°
90
°
60
°
3
Motorola Thyristor Device Data
Figure 3. On-State Characteristics
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
0
IT, INSTANTANEOUS ON-STATE CURRENT (AMP)
0.5 1 1.5 2 2.5 3 4 5
10
1
0.1
MAXIMUM @ TJ = 125
°
C
TYPICAL AT
TJ = 25
°
C
MAXIMUM @ TJ = 25
°
C
Figure 4. Thermal Response
t, TIME (ms)
r(t), TRANSIENT THERMAL RESIST ANCE
(NORMALIZED)
1
0.1
0.01 1·104
10001001010.1
Figure 5. Hold Current Variation
TJ, JUNCTION TEMPERATURE (
°
C)
–50
IH, HOLD CURRENT (mA)
40
5–10 30 50 70 110 130
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 6. Gate Trigger Current Variation
TJ, JUNCTION TEMPERATURE (
°
C)
IGT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (VOLT)
–50 –30 10 50 90 110 130
100
1
Q2
1
0.4
–50 –30 – 10 10 50 110 130
Q1
Figure 7. Gate Trigger Voltage Variation
3.5 4.5 10 90–30
10
15
20
25
30
35
10
–10 30 70 30 90
0.45
0.5
0.55
0.65
075
0.85
0.9
0.95
0.6
0.7
0.8
Q1
Q3
Q3
70
Q2
MT2 POSITIVE
MT2 NEGATIVE
4 Motorola Thyristor Device Data
Figure 8. Critical Rate of Rise of Off-State
Voltage (Exponential)
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
01000100101
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAG
E
Figure 9. Critical Rate of Rise of
Commutating Voltage
(di/dt)c, RATE OF CHANGE OF COMMUT ATING CURRENT (A/ms)
(V/ s)
µ
tw
VDRM (di/dt)c = 6f ITM
1000
f = 1
2 tw
TJ = 125
°
C
100°
C
75°
C
10 60
100
10
1
LL1N400
7
400
V
+
MEASURE
I
–
CHARGE
CONTROL
CHARGE TRIGGER
NON-POLAR
CL
51
2
1
1N91
4G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
(dv/dt) , CRITICAL RATE OF RISE OF
(V/ s)
µ
c
COMMUTATING VOLTAGE
15 20 25 30 35 40 45 50 55
4.5K
3.5K
2.5K
1.5K
1K1K
500 MT2 POSITIVE
MT2 NEGATIVE
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-09
(TO–220AB)
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
6 Motorola Thyristor Device Data
NOTES
7
Motorola Thyristor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer .
8 Motorola Thyristor Device Data
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141,
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
– http://sps.motorola.com/mfax/ 852–26629298
HOME PAGE: http://motorola.com/sps/
MAC8D/D
◊
