TPCP8507 - Toshiba - Datasheet.Directory

TPCP8507

2006-11-13

TOSHIBA Transistor Silicon NPN Epitaxial Type

TPCP8507

High-Speed Switching Applications

DC/DC Converters

• High DC current gain: hFE = 120~300 (IC = 0.1 A)

• Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)

• High-speed switching: tf = 0.2 μs (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Collector-base voltage VCBO 180 V

Collector-emitter voltage VCEX 150 V

Collector-emitter voltage VCEO 120 V

Collector-emitter voltage VEBO 7 V

DC (Note 1) IC 1.0 A

Collector current

Pulsed (Note 1) ICP 2.0 A

Base current IB 0.1 A

t = 10 s 3.00 W

Collector power

dissipation DC

PC (Note 2)

1.25 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −55~150 °C

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 2: Mounted on an FR4 board (glass epoxy; 1.6 mm thick; Cu area,

645 mm2)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

0.33±0.05

0.28

+0.1

-0.11

1.12

+0.13

-0.12

2.4±0.1

0.475

0.65

2.8±0.1

0.05 M

2.9±0.1

0.8±0.05

0.17±0.02

0.05 M

0.025

1.12

+0.13

-0.12

0.28

+0.1

-0.11

JEDEC ⎯

JEITA ⎯

TOSHIBA 2-3V1A

Weight: 0.017 g (typ.)

1. Collector 5. Emitter

2. Collector 6. Collector

3. Collector 7. Collector

4. Base 8. Collector

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TPCP8507

2006-11-13

Figure 1. Circuit configuration (top view) Figure 2. Marking (Note 4)

Note 4: on lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Collector cutoff current ICBO V

CB = 180 V, IE = 0 ⎯ ⎯ 100 nA

Emitter cutoff current IEBO V

EB = 7 V, IC = 0 ⎯ ⎯ 100 nA

Collector-emitter breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 180 ⎯ ⎯ V

Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 ⎯ ⎯ V

hFE(1) VCE = 2 V, IC = 0.1A 120 ⎯ 300

DC current gain

hFE(2) VCE = 2 V, IC = 0.3A 60 ⎯ ⎯

Collector-emitter saturation voltage VCE (sat) I

C = 0.3 A, IB = 0.01A ⎯ ⎯ 0.14 V

Base-emitter saturation voltage VBE (sat) I

C = 0.3 A, IB = 0.01A ⎯ ⎯ 1.1 V

Storage time tr ⎯ 0.1 ⎯

Storage time tstg ⎯ 1.5 ⎯

Switching time

Fall time tf

See Figure 3 circuit diagram.

VCC ≅ 72 V, RL = 240 Ω

IB1 = −IB2 = 10mA ⎯ 0.2 ⎯

μs

Figure 3. Switching Time Test Circuit & Timing Chart

Duty cycle < 1 %

IB1

IB2

OUT

VCC

IB1

20 μs

IB2

1　 2　 3　 4

8　 7 　6 　 5

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

Type

8507

8 7 6 5

1 2 3 4

Lot No.

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TPCP8507

2006-11-13

0.4

0.6

0.8

1.0

4 6 8 10 0 2

0.2

0.01

0.1

0.001 10.1 0.01 0.1 1

0.1

0.001

1.2

0.2

0.4

1.0 0.8 0.6 0.4 0.2 0

0.6

0.8

1.0

IC – VCE

hFE – IC

VCE (sat) – IC

VBE (sat) – IC

IC– VBE

Ta = −55°C

100

Common emitter

VCE = 2 V

Single nonrepetitive pulse

Ta = −55°C

100

Common emitter

β = 30

Single nonrepetitive pulse

Ta = −55°C

100

Common emitter

β = 30

Single nonrepetitive pulse

IB = −1 mA

Common emitter

Ta = 25°C

Single nonrepetitive pulse

−8

−10 −6

−4

−5

−3

−2

Collector current IC (A)

Collector-emitter voltage VCE (V)

Collector current IC (A)

DC current gain hFE

Collector current IC (A)

Collector-emitter saturation voltage

VCE (sat) (V)

Collector current IC (A)

Base-emitter voltage VBE (V)

Base-emitter saturation voltage

VBE (sat) (V)

Collector current IC (A)

0.01

100

1000

0.001

Ta = −55°C

100

Common emitter

VCE = 2 V

Single nonrepetitive pulse

1 0. 1 10

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TPCP8507

2006-11-13

0.001

100

1000

0.01 0.1 1 10 100 1000

1000

0.001

0.01

0.1

0.1 10 1 100

rth – tw

*:Single nonrepetitive pulse

Ta = 25°C

Note that the curves for 100ms*,10s*

and DC operation will be different

when the devices aren’t mounted on

FR4 board (glass epoxy, 1.6 mm

thick, Cu area: 645 mm2).These

characteristic curves must be derated

linearly with increase in temperature.

IC max (pulsed)*

IC max (continuous)

DC operation

Ta = 25°C

1ms* 10ms*

VCEO max

100μs*

100 ms*

10μs*

10 s*

Curves apply only to limited areas of thermal resistance.

Single nonrepetitive pulse Ta = 25°C

Mounted on an FR4 board (glass epoxy; 1.6 mm thick;

Cu area, 645 mm2)

Safe Operating Area

Collector-emitter voltage VCE (V)

Pulse width tw (S)

Transient thermal resistance

rth (°C/W)

Collector current IC (A)

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TPCP8507

2006-11-13

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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

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