SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive * Low ON-resistance: Unit: mm Ron = 225 m (max) (@VGS = -4 V) 2.10.1 Ron = 117 m (max) (@VGS = -10 V) 1.70.1 Rating Unit Drain-source voltage VDS -30 V Gate-source voltage VGSS 20 V DC ID -2 Pulse IDP -4 PD (Note 1) 800 PD (Note 2) 500 Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Drain power dissipation 3 2 A 0.1660.05 Drain current 1 0.70.05 Symbol 2.00.1 Characteristic 0.650.05 Absolute Maximum Ratings (Ta = 25C) +0.1 0.3 -0.05 * mW 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on an FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2 ) UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 -30 V (BR) DSX ID = -1 mA, VGS = +20 V -15 Unit V Drain cutoff current IDSS VDS = -30 V, VGS = 0 -1 A Gate leakage current IGSS VGS = 16 V, VDS = 0 1 A -1.2 -2.6 V S Gate threshold voltage Vth Forward transfer admittance Yfs Drain-source ON-resistance RDS (ON) VDS = -5 V, ID = -1 mA VDS = -5 V, ID =- 1 A (Note 3) 1.6 3.1 ID = -1 A, VGS = -10 V (Note 3) 80 117 ID = -0.5 A, VGS = -4 V (Note 3) 160 225 m Input capacitance Ciss VDS = -15 V, VGS = 0, f = 1 MHz 280 pF Output capacitance Coss VDS = -15 V, VGS = 0, f = 1 MHz 80 pF Reverse transfer capacitance Crss VDS = -15 V, VGS = 0, f = 1 MHz 45 pF Switching time Turn-on time ton VDD = -15 V, ID = -1 A, 16 Turn-off time toff VGS = 0 to -4 V, RG = 10 35 0.8 1.2 Drain-source forward voltage VDSF ID = 2 A, VGS = 0 V (Note 3) ns V Note 3: Pulse test 1 2007-11-01 SSM3J117TU Switching Time Test Circuit (a) Test circuit 0 (b) VIN OUT 0V 10% IN RG -4 V 10 s VDD (c) VOUT VDD = -15 V RG = 10 D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C Marking 90% -4 V RL VDS (ON) 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 3 3 JJ9 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3J117TU ID - VDS ID - VGS -5 -10 -6 V Common Source -3.6 V -3 Drain current Drain current -1 ID -4 VGS = -3.3 V -2 VDS = -5 V (A) -4 V ID (A) -10 V -0.1 Ta = 100C 25C -0.01 -25C -1 -0.001 Common Source Ta = 25C 0 0 -0.2 -0.4 -0.6 Drain-source voltage -0.8 VDS -0.0001 0 -1 -0.5 (V) -1.0 -1.5 VGS -3.5 -4.0 (V) 500 ID = -1 A 450 Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) -3.0 RDS (ON) - ID 500 Common Source 400 350 300 25 C 250 200 Ta = 100C 150 100 50 0 -2 -4 -6 -8 VGS Common Source 450 Ta = 25C 400 350 300 250 200 VGS = -4.0 V 150 100 -10 V 50 -25C Gate-source voltage 0 -10 0 -1 Drain current -4 ID -5 (A) Vth - Ta 500 -2.0 Vth (V) Common Source Gate threshold voltage 400 300 ID = -0.5 A / VGS = -4.0 V 200 100 0 -50 -3 -2 (V) RDS (ON) - Ta Drain-source on-resistance RDS (ON) (m) -2.5 Gate-source voltage RDS (ON) - VGS 0 -2.0 -1.0 A / -10 V -1.5 -1.0 -0.5 Common source VDS = -5 V 0 0 50 Ambient temperature 100 Ta 150 -50 (C) ID = -1 mA 0 50 Ambient temperature 3 100 Ta 150 (C) 2007-11-01 SSM3J117TU IDR - VDS 10 (A) Common Source VDS = -5 V IDR 1 0.3 0.1 -0.01 -1 -0.1 Drain current D Ta = 25C IDR G S 0.1 Ta = 100C 0.01 25C 0.001 -25C 0.0001 0 -10 ID Common Source VGS = 0 V 1 Ta = 25C 3 Drain reverse current Forward transfer admittance Yfs (S) |Yfs| - ID 10 0.2 (A) 0.4 0.6 Drain-source voltage 0.8 1.0 VDS (V) t - ID C - VDS 600 1000 Common Source VDD = -10 V VGS = 0 to -4 V Ta = 25C RG = 10 300 (ns) 500 Ciss tf t 100 Switching time Capacitance C (pF) toff 100 Coss 50 30 Common Source Crss Ta = 25C f = 1 MHz VGS = 0 V 10 -0.1 -1 -10 Drain-source voltage 10 VDS ton tr 1 0.01 -100 0.1 Cu Pad : 645 mm ) (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) Transient thermal impedance Rth (C/W) (mW) (A) c 2 (25.4 x 25.4 x 1.6 mm b: Mounted on a ceramic board PD ID 600 a: Mounted on an FR4 board 2 b b a 100 600 a 400 10 a: Mounted on a ceramic board 200 0 -40 10 t - ID PD - Ta 800 1 Drain current (V) 1000 Drain Power Dissipation 1.2 (25.4 x 25.4 x 0.8 mm 2 Cu Pad : 645 mm ) b: Mounted on an FR4 board 1 -20 0 20 40 60 80 Ambient temperature 0.001 100 120 140 160 Ta 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3) 0.01 0.1 1 Pulse Width (C) 4 10 100 600 tw (s) 2007-11-01 SSM3J117TU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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