SSM3J117TU
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J117TU
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V)
R
on = 117 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain–source voltage VDS −30 V
Gate–source voltage VGSS ± 20 V
DC ID −2
Drain current Pulse IDP −4 A
PD (Note 1) 800
Drain power dissipation PD (Note 2) 500 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
V (BR) DSS I
D = −1 mA, VGS = 0 −30 ⎯ ⎯
Drain–source breakdown voltage
V (BR) DSX I
D = −1 mA, VGS = +20 V −15 ⎯ ⎯
V
Drain cutoff current IDSS V
DS = −30 V, VGS = 0 ⎯ ⎯ −1 μA
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA
Gate threshold voltage Vth V
DS = −5 V, ID = −1 mA −1.2 ⎯ −2.6 V
Forward transfer admittance ⏐Yfs⏐ V
DS = −5 V, ID =− 1 A (Note 3) 1.6 3.1 ⎯ S
ID = −1 A, VGS = −10 V (Note 3) ⎯ 80 117
Drain–source ON-resistance RDS (ON)
ID = −0.5 A, VGS = −4 V (Note 3) ⎯ 160 225
mΩ
Input capacitance Ciss V
DS = −15 V, VGS = 0, f = 1 MHz ⎯ 280 ⎯ pF
Output capacitance Coss V
DS = −15 V, VGS = 0, f = 1 MHz ⎯ 80 ⎯ pF
Reverse transfer capacitance Crss V
DS = −15 V, VGS = 0, f = 1 MHz ⎯ 45 ⎯ pF
Turn-on time ton ⎯ 16 ⎯
Switching time
Turn-off time toff
VDD = −15 V, ID = −1 A,
VGS = 0 to −4 V, RG = 10 Ω ⎯ 35 ⎯
ns
Drain–source forward voltage VDSF I
D = 2 A, VGS = 0 V (Note 3)
⎯ 0.8 1.2 V
Note 3: Pulse test
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
-0.05
1.7±0.1
2.1±0.1
0.65±0.05
1
2
2.0±0.1
3
0.7±0.05
+0.1
0.3
0.166±0.05
UFM
SSM3J117TU
2007-11-01
2
Switching Time Test Circuit
Marking Equivalent Circuit
(top view)
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = −1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
VDD = −15 V
RG = 10 Ω
D.U.
<
=
1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
IN
0
−4 V
10 μs VDD
OUT
RG
RL
(c) VOUT
ton
90%
10%
−4 V
0 V
90%
10%
toff
tr tf
VDS
(
ON
)
VDD
(b) VIN
(a) Test circuit
JJ9
1 2
3
12
3
SSM3J117TU
2007-11-01
3
Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
Drain–source voltage VDS (V)
ID – VDS
Drain current ID (A)
Gate–source voltage VGS (V)
ID = −1 A
Common Source
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain–source on-resistance
RDS (ON) (mΩ)
Drain current ID (A)
RDS (ON) – ID
Drain–source ON-resistance
RDS (ON) (mΩ)
Common Source
Ta = 25°C
Gate–source voltage VGS (V)
Drain–source ON-resistance
RDS (ON) (mΩ)
RDS (ON) – VGS
0
−4
0 −0.2 −0.4 −0.6 −1
−3
VGS = −3.3 V
−3.6 V
−10 V
−1
−2
−4 V
−6 V
−0.8
-5
ID – VGS
Common Source
VDS = −5 V
Drain current ID (A)
-10
0
−0.1
−1
−0.001
−0.01
−0.0001
−4.0−0.5 −1.5
−25°C
Ta = 100°C
25°C
−1.0 −3.5 −3.0 −2.5 −2.0
0 −2 −6 −8 −4
0
100
200
300
400
25 °C
Ta = 100°C
−25°C
450
350
250
150
50
500
−10
400
0
100
−3
150
250
350
VGS = −4.0 V
0 −2 −4
50
200
300
450
−1
−10 V
−5
500
Common Source
Ta = 25°C
500
0
−50
ID = –0.5 A / VGS = –4.0 V
0 50 150
100
200
300
400
100
–1.0 A / –10 V
Common Source
−2.0
0
−50 0 150
−0.5
−1.0
−1.5
50 100
Common source
VDS = −5 V
ID = −1 mA
SSM3J117TU
2007-11-01
4
Switching time t (ns)
Drain current ID (A)
t – ID
Drain reverse current IDR (A)
Drain–source voltage VDS (V)
IDR – VDS
Common Source
VGS = 0 V
Ta = 25°C
Drain current ID (A)
Forward transfer admittance ⎪Yfs⎪ (S)
|Yfs| – ID
Drain–source voltage VDS (V)
C – VDS
Capacitance C (pF)
0.1 −10
1
10
−0.1 −1
3
0.3
−0.01
Common Source
VDS = −5 V
Ta = 25°C
G
D
S
IDR
10
0
0.1
1
0.001
0.01
0.0001
0.2 0.6
0.4 1.0 0.8 1.2
−25°C
Ta = 100°C
25°C
10
−0.1 −1 −10 −100
100
1000
300
500
30
50
Ciss
Coss
Crss
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.01
100
0.1
600
1 10
toff
tf
10 ton
tr
Common Source
VDD = −10 V
VGS = 0 to −4 V
Ta = 25°C
RG = 10 Ω
PD – Ta
800
0
200
120
b
100 140
400
600
160
1000
80 60 40
20 0 –20 –40
a
Transient thermal impedance
Rth (°C/W)
Pulse Width tw (s)
t – ID
1
100
600
10
0.001 0.01 0.1 600
b
c
a
1 10 100
a: Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm2)
b: Mounted on a ceramic board
(
25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm2
)
Ambient temperature Ta (°C)
Drain Power Dissipation PD (mW)
a: Mounted on a ceramic board
(25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm2)
b: Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm2)
c: Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm2 x 3)
SSM3J117TU
2007-11-01
5
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
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equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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